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In this article,organic thin-film transistors (OTFTs) with top-gate and bottom contact geometry based on pentacene as active layer were fabricated. The experimental data of the I-V were obtained from the organic thin-film transistors. The field-effect mobility of the OTFT was calculated by fitting of theoretical calculation to the experimental data. We find that field-effect mobility values have great difference by different fitting methods. We calculate the field-effect mobility by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1/2 range. The inherent inaccuracy of other fitting method can be reduced. The results is the nearest field-effect mobility obtained with other methods.
[1] Han S H,Kim J H,Janga J,Cho S M,Oh M H,Le S H,Choo D J 2006 Appl. Phys. Lett. 88 073519
[2] Bana D,Han S,Lu Z H,Oogarah T,Spring Thorpe A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[3] Lee S H,Choo D J 2007 Appl. Phys. Lett. 90 033502
[4] Zhang F J,Aollmer A,Zhang J,Xu Z,Rabe J P,Koch N,Org 2007 Electron. 8 606
[5] Gundlach D J,Zhou L,Nichols J A 2006 Appl. Phys. 100 024509
[6] Tian X Y,Xu Z,Zhao S L,Zhang F J 2009 Chin. Phys. B 18 5078
[7] Tian X Y,Xu Z,Zhao S L,Zhang F J 2010 Chin. Phys. B 19 018103
[8] Jackson T N 2005 Nature (London) 4 581
[9] Berggren M 2007 Nature (London) 6 3
[10] David J G 2007 Nature (London) 6 173
[11] Liang W,Daniel Fine,Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
[12] Wang J,Wang H B,Yan X J,Huang H C,Yana D H 2005 Appl. Phys. Lett. 87 093507
[13] Berliocchil M,Manentil M,Bolognesil A,Carlol A D,Luglil P,Paolesse R,Mandoy F,Natale C D,Proietti E,Petrocco G 2004 Semicond. Sci. Technol. 19 354
[14] Antoniadis H,Hsieh B R,Abkowitz M A 1993 Appl. Phys. Lett. 62 3167
[15] Lin L B,Jenekhe S A,Borsenberger P M 1996 Appl. Phys. Lett. 69 3495
[16] Wei Z Q,Yang Q X,Sun G J 2001 Journal of Optoelectronics ·Laser 12 930 (in Chinese) [魏振乾、杨庆鑫、孙桂娟等 2001 光电子 〖17] Yuan G C,Xu Z,Zhao S L,Zhang F J 2008 Chin. Phys. B 17 1887
[17] Singh T B,Sariciftci N S 2006 Annu. Rev. Mater. Res. 36 199
[18] Dimitrakopoulos C D,Mascaro D J 2001 IBM J. Res. Dev. 45 11
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[1] Han S H,Kim J H,Janga J,Cho S M,Oh M H,Le S H,Choo D J 2006 Appl. Phys. Lett. 88 073519
[2] Bana D,Han S,Lu Z H,Oogarah T,Spring Thorpe A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[3] Lee S H,Choo D J 2007 Appl. Phys. Lett. 90 033502
[4] Zhang F J,Aollmer A,Zhang J,Xu Z,Rabe J P,Koch N,Org 2007 Electron. 8 606
[5] Gundlach D J,Zhou L,Nichols J A 2006 Appl. Phys. 100 024509
[6] Tian X Y,Xu Z,Zhao S L,Zhang F J 2009 Chin. Phys. B 18 5078
[7] Tian X Y,Xu Z,Zhao S L,Zhang F J 2010 Chin. Phys. B 19 018103
[8] Jackson T N 2005 Nature (London) 4 581
[9] Berggren M 2007 Nature (London) 6 3
[10] David J G 2007 Nature (London) 6 173
[11] Liang W,Daniel Fine,Ananth Dodabalapurb 2004 Appl. Phys. Lett. 85 6386
[12] Wang J,Wang H B,Yan X J,Huang H C,Yana D H 2005 Appl. Phys. Lett. 87 093507
[13] Berliocchil M,Manentil M,Bolognesil A,Carlol A D,Luglil P,Paolesse R,Mandoy F,Natale C D,Proietti E,Petrocco G 2004 Semicond. Sci. Technol. 19 354
[14] Antoniadis H,Hsieh B R,Abkowitz M A 1993 Appl. Phys. Lett. 62 3167
[15] Lin L B,Jenekhe S A,Borsenberger P M 1996 Appl. Phys. Lett. 69 3495
[16] Wei Z Q,Yang Q X,Sun G J 2001 Journal of Optoelectronics ·Laser 12 930 (in Chinese) [魏振乾、杨庆鑫、孙桂娟等 2001 光电子 〖17] Yuan G C,Xu Z,Zhao S L,Zhang F J 2008 Chin. Phys. B 17 1887
[17] Singh T B,Sariciftci N S 2006 Annu. Rev. Mater. Res. 36 199
[18] Dimitrakopoulos C D,Mascaro D J 2001 IBM J. Res. Dev. 45 11
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