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采用N, N'-diphenyl-N, N'-bis(1-naphthyl-pheny1)-1, 1'-biphenyl-4, 4'-diamine (NPB):4, 4'-N, N'-dicarbazole-biphenyl (CBP) 掺杂体系为复合空穴传输层,制备了结构为indium-tin oxide (ITO)/NPB:CBP/CBP:bis iridium (acetylacetonate) /2, 9-dimethyl-4, 7-diphenyl-p
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关键词:
- 有机电致发光器件(OLEDs) /
- 复合空穴传输层 /
- NPB:CBP /
- 器件性能
Organic light-emitting devices (OLEDs) with the structure of indium-tin oxide (ITO)/N, N'-diphenyl-N, N'-bis(1-naphthyl-pheny1)-1, 1'-biphenyl-4, 4'-diamine (NPB):4, 4'-N, N'-dicarbazole-biphenyl (CBP)/CBP:bis iridium (acetylacetonate) /2, 9-dimethyl-4, 7-diphenyl-phenanthroline (BCP)/Mg:Ag were fabricated. A doping system consisting of NPB and CBP was employed as the modulated hole transporting layer. The electroluminescent characteristics of the OLEDs were investigated by adjusting the concentration proportions of NPB:CBP doping system. The results showed that the hole transporting capability can be adjusted and the power efficiency was remarkably affected by different doping concentration of NPB:CBP system. Optimized yellow light OLED with a maximum power efficiency of 18.1 lm/W was obtained with an optimum concentration proportion of NPB:CBP of approximately 1 ∶3. The improved OLED performance was attributed to the reduction of hole injection and low transporting capability by doping bipolar host material CBP in hole transporting layer, which significantly enhanced charge carrier balance and electron-hole recombination probability.-
Keywords:
- organic light-emitting devices (OLEDs) /
- mixed hole transporting layer /
- NPB:CBP /
- device performance
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[5] Aziz H, Popovic Z D 2002 Appl. Phys. Lett. 80 2180
[6] Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[7] Lee M T, Liao C H, Tsai C H, Chen C H 2005 Appl. Phys. Lett. 86 103501
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[11] Chu T Y, Song O K 2007 Appl. Phys. Lett. 90 203512
[12] Hoping M, Schildknecht C, Gargouri H, Riedl T, Tilgner M, Johannes H H, Kowalsky W 2008 Appl. Phys. Lett. 92 213306
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[15] Wang J, Jiang Y D, Yu J S, Lou S L, Lin H 2007 Appl. Phys. Lett. 91 131105
[16] Kanai H, Ichinosawa S, Sato Y 1997 Synth. Met. 91 195
[17] Fowler R H, Nordheim L 1928 Proc. R. Soc. Lon. Ser. A 119 173
[18] Wen W, Wang B, Li L, Yu J S, Jiang Y D 2009 Acta. Phys. Sin. 58 8014 (in Chinese)[文 雯、王 博、李 璐、于军胜、蒋亚东 2009 物理学报 58 8014]
[19] Koster L J A, Smits E C P, Mihailetchi V D, Blom P W M 2005 Phys. Rev. B 72 085205
[20] Lebental M, Choukri H, Chénais S, Forget S, Siove A, Geffroy B, Tuti E 2009 Phys. Rev. B 79 165318
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[1] Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2] Zhang L J, Hua Y L, Wu X M, Wang Y, Yin S G 2008 Chin. Phys. B 17 3097
[3] Niu Q L, Zhang Y, Fan G H 2009 Acta. Phys. Sin. 58 8630 (in Chinese)[牛巧利、张 勇、范广涵 2009 物理学报 58 8630]
[4] Qiu Y, Gao Y D, Wei P, Wang L D 2002 Appl. Phys. Lett. 80 2628
[5] Aziz H, Popovic Z D 2002 Appl. Phys. Lett. 80 2180
[6] Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[7] Lee M T, Liao C H, Tsai C H, Chen C H 2005 Appl. Phys. Lett. 86 103501
[8] Lee T H, Huang J C A, Pakhomov G L, Guo T F, Wen T C, Huang Y S, Tsou C C, Chung C T, Lin Y C, Hsu Y J 2008 Adv. Funct. Mater. 18 3036
[9] Niu L B, Guan Y X 2009 Acta. Phys. Sin. 58 4931 (in Chinese)[牛连斌、关云霞 2009 物理学报 58 4931]
[10] Xie Z Y, Wong T C, Hung L S, Lee S T 2002 Appl. Phys. Lett. 80 1477
[11] Chu T Y, Song O K 2007 Appl. Phys. Lett. 90 203512
[12] Hoping M, Schildknecht C, Gargouri H, Riedl T, Tilgner M, Johannes H H, Kowalsky W 2008 Appl. Phys. Lett. 92 213306
[13] Wang J, Yu J S, Lin H, Wei X Q, Jiang Y D 2008 J. Lumin. 128 1379
[14] Suo F, Yu J S, Deng J, Jiang Y D, Wang R, Wang Z W, Liu T X 2007 Acta. Phys. Sin. 56 6685 (in Chinese)[锁 钒、于军胜、邓 静、蒋亚东、王 睿、汪志伟、刘天西 2007 物理学报 56 6685]
[15] Wang J, Jiang Y D, Yu J S, Lou S L, Lin H 2007 Appl. Phys. Lett. 91 131105
[16] Kanai H, Ichinosawa S, Sato Y 1997 Synth. Met. 91 195
[17] Fowler R H, Nordheim L 1928 Proc. R. Soc. Lon. Ser. A 119 173
[18] Wen W, Wang B, Li L, Yu J S, Jiang Y D 2009 Acta. Phys. Sin. 58 8014 (in Chinese)[文 雯、王 博、李 璐、于军胜、蒋亚东 2009 物理学报 58 8014]
[19] Koster L J A, Smits E C P, Mihailetchi V D, Blom P W M 2005 Phys. Rev. B 72 085205
[20] Lebental M, Choukri H, Chénais S, Forget S, Siove A, Geffroy B, Tuti E 2009 Phys. Rev. B 79 165318
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