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为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi2/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi2 /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异.
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关键词:
- TiSi2纳米岛 /
- Sr/Si(100)表面 /
- 扫描隧道显微镜
For the investigation of the interface stability of SrTiO3/Sr/Si(100) system during high temperature annealing process, we have grown 1—2 atom layer SrTiO3 ultra-thin film on Sr/Si(100)-2×1 substrate using pulsed laser deposition technique. After annealing, we found that nano-scale islands appear in the surface. These nano-islands show metallic property by scanning tunneling microscopy, and the STM image shows bias voltage dependence of these nano-islands. Oxygen in the oxide reacts with silicon and forms volatile silicon monoxide during vacuum annealing, while Ti atoms in the oxide react with silicon, forming C-54 TiSi2 islands.[1] Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402
[2] Liang Y, Gan S, Engelhard M 2001 Appl. Phys. Lett. 79 3591
[3] Hu X M, Li H, Liang Y, Wei Y, Yu Z, Marshall D, Edwards J, Droopad R, Zhang X, Demkov A A, Moore K, Kulik J 2003 Appl. Phys. Lett. 82 203
[4] Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53
[5] Mckee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014
[6] Mckee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726
[7] Niu F, Wessels B W 2007 Journal of Crystal Growth 300 509
[8] Kingon A I, Maria J P, Streiffers S K 2000 Nature 406 1032
[9] Kubo T, H Nozoye 2003 Surf. Sci. 542 177
[10] Kourkoutis L, Hellberg C, Vaithyanathan V, Li H, Parker M, Andersen K, Schlom D, Muller D 2008 Phys. Rev. Lett. 100 036101
[11] Zhao M H, Sun J J, Wang D, Zou Z Q, Liang Q 2010 Acta Phys. Sin. 59 636 (in Chinese) [赵明海、 孙静静、 王 丹、 邹志强、 梁 齐 2010 物理学报 59 636]
[12] Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 164707
[13] Du W H 2010 Acta Phys. Sin. 59 031 (in Chinese) [杜文汉 2010 物理学报 59 431]
[14] Zhao F Z, Cui X F, Wang B, Hou JG 2006 Appl. Surf. Sci. 253 2785
[15] Goncharova L V, Starodub D G, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom D 2006 J. Appl. Phys. 100 014912
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[1] Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402
[2] Liang Y, Gan S, Engelhard M 2001 Appl. Phys. Lett. 79 3591
[3] Hu X M, Li H, Liang Y, Wei Y, Yu Z, Marshall D, Edwards J, Droopad R, Zhang X, Demkov A A, Moore K, Kulik J 2003 Appl. Phys. Lett. 82 203
[4] Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53
[5] Mckee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014
[6] Mckee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726
[7] Niu F, Wessels B W 2007 Journal of Crystal Growth 300 509
[8] Kingon A I, Maria J P, Streiffers S K 2000 Nature 406 1032
[9] Kubo T, H Nozoye 2003 Surf. Sci. 542 177
[10] Kourkoutis L, Hellberg C, Vaithyanathan V, Li H, Parker M, Andersen K, Schlom D, Muller D 2008 Phys. Rev. Lett. 100 036101
[11] Zhao M H, Sun J J, Wang D, Zou Z Q, Liang Q 2010 Acta Phys. Sin. 59 636 (in Chinese) [赵明海、 孙静静、 王 丹、 邹志强、 梁 齐 2010 物理学报 59 636]
[12] Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 164707
[13] Du W H 2010 Acta Phys. Sin. 59 031 (in Chinese) [杜文汉 2010 物理学报 59 431]
[14] Zhao F Z, Cui X F, Wang B, Hou JG 2006 Appl. Surf. Sci. 253 2785
[15] Goncharova L V, Starodub D G, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom D 2006 J. Appl. Phys. 100 014912
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