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Ni/Pb(Zr,Ti)O3/TbFe2层状复合材料的谐振磁电特性研究

毕科 艾迁伟 杨路 吴玮 王寅岗

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Ni/Pb(Zr,Ti)O3/TbFe2层状复合材料的谐振磁电特性研究

毕科, 艾迁伟, 杨路, 吴玮, 王寅岗

Study on resonance magnetoelectric effect of layeredNi/Pb(Zr,Ti)O3/TbFe2 composites

Bi Ke, Ai Qian-Wei, Yang Lu, Wu Wei, Wang Yin-Gang
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  • 采用化学镀和黏接法制备层状磁电复合材料Ni/PZT/TbFe2,研究其磁电性能及谐振频率随Ni层厚度的变化情况. 结果表明:Ni/PZT/TbFe2层状磁电复合材料与其他结构的磁电性能不同,其一阶弯曲谐振峰值和纵向谐振峰值都很大. 随着Ni层厚度的增加,Ni/PZT/TbFe2层状磁电复合材料的一阶纵向谐振峰值逐渐增大. 结合实验数据和理论计算值得出了材料的一阶弯曲谐振频率fr1和一阶纵向谐振频率f
    Layered magnetoelectric Ni/PZT/TbFe2 composites have been prepared by electroless deposition and bonding method. The influence of the Ni layer thickness on ME coupling and resonance frequency is discussed. The results show that the magnetoelectric coefficient of Ni/PZT/TbFe2 composites changes differently from that of other composites and two remarkable resonance peaks have been observed. The magnetoelectric voltage coefficient at the first-order longitudinal resonance mode increases as the Ni layer thickness increases. Both experimental and calculated data reveal that the first-order bending resonance frequency fr1 and longitudinal resonance frequency fr2 increase with the Ni layer thickness.
    • 基金项目: 国家大学生创新性实验计划(批准号:091028735),江苏省研究生培养创新工程(批准号:CX10B_099Z),江苏省自然科学基金(批准号:BK2010505)和南京航空航天大学科研创新基金资助的课题.
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    Fetisov Y K, Bush A A, Kamentsev K E, Ostashchenko A Y, Srinivasan G 2006 IEEE Sens. J. 6 935

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    Fiebig M 2005 J. Phys. D.:Appl. Phys. 38 R123

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Bibes M, Barthelemy A 2008 Nat. Mater. 7 425

    [7]

    Israel C, Mathur N D, Scott J F 2008 Nat. Mater. 7 93

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    Folen V J, Rado G T, Stalder E W 1961 Phys. Rev. Lett. 6 607

    [9]

    Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491 (in Chinese) [仲崇贵、蒋 青、方靖淮、葛存旺 2009 物理学报 58 3491]

    [10]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceramics 8 107

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    Pan D A, Bai Y, Chu W Y, Qiao L J 2008 J. Phys.:Condens. Matter. 20 025203

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    Laletin V M, Paddubnaya N, Srinivasan G, De Vreugd C P, Bichurin M I, Petrov V M, Filippov D A 2005 Appl. Phys. Lett. 87 222507

    [13]

    Dong S X, Zhai J Y, Xing Z P, Li J F, Viehland D 2007 Appl. Phys. Lett. 91 022915

    [14]

    Chashin D V, Fetisov Y K, Tafintseva E V, Srinivasan G 2008 Solid State Commun. 148 55

    [15]

    Bi K, Wang Y G 2010 Solid State Commun. 150 248

    [16]

    Bi K, Wang Y G, Wu W, Pan D A 2010 J. Phys. D.:Appl. Phys. 43 132002

    [17]

    Pan D A, Zhang S G, Tian J J, Sun J S, Volinsky A A, Qiao L J 2010 Chin. Phys. B 19 027201

    [18]

    Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 物理学报 58 4205]

    [19]

    Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 0546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 物理学报 58 0546]

    [20]

    Wan J G, Li Z Y, Wang Y, Zeng M, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 202504

    [21]

    Nan C W, Liu G, Lin Y H 2003 Appl. Phys. Lett. 83 4366

  • [1]

    Landau L D, Lifshitz E M 1960 Electrodynamics of continuous media (Oxford Pergamon Press) p417

    [2]

    Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759

    [3]

    Fetisov Y K, Bush A A, Kamentsev K E, Ostashchenko A Y, Srinivasan G 2006 IEEE Sens. J. 6 935

    [4]

    Fiebig M 2005 J. Phys. D.:Appl. Phys. 38 R123

    [5]

    Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101

    [6]

    Bibes M, Barthelemy A 2008 Nat. Mater. 7 425

    [7]

    Israel C, Mathur N D, Scott J F 2008 Nat. Mater. 7 93

    [8]

    Folen V J, Rado G T, Stalder E W 1961 Phys. Rev. Lett. 6 607

    [9]

    Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491 (in Chinese) [仲崇贵、蒋 青、方靖淮、葛存旺 2009 物理学报 58 3491]

    [10]

    Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceramics 8 107

    [11]

    Pan D A, Bai Y, Chu W Y, Qiao L J 2008 J. Phys.:Condens. Matter. 20 025203

    [12]

    Laletin V M, Paddubnaya N, Srinivasan G, De Vreugd C P, Bichurin M I, Petrov V M, Filippov D A 2005 Appl. Phys. Lett. 87 222507

    [13]

    Dong S X, Zhai J Y, Xing Z P, Li J F, Viehland D 2007 Appl. Phys. Lett. 91 022915

    [14]

    Chashin D V, Fetisov Y K, Tafintseva E V, Srinivasan G 2008 Solid State Commun. 148 55

    [15]

    Bi K, Wang Y G 2010 Solid State Commun. 150 248

    [16]

    Bi K, Wang Y G, Wu W, Pan D A 2010 J. Phys. D.:Appl. Phys. 43 132002

    [17]

    Pan D A, Zhang S G, Tian J J, Sun J S, Volinsky A A, Qiao L J 2010 Chin. Phys. B 19 027201

    [18]

    Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese) [卞雷祥、文玉梅、李 平 2009 物理学报 58 4205]

    [19]

    Zhang Y F, Wen Y M, Li P, Bian L X 2009 Acta Phys. Sin. 58 0546 (in Chinese) [张延芳、文玉梅、李 平、卞雷祥 2009 物理学报 58 0546]

    [20]

    Wan J G, Li Z Y, Wang Y, Zeng M, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 202504

    [21]

    Nan C W, Liu G, Lin Y H 2003 Appl. Phys. Lett. 83 4366

计量
  • 文章访问数:  7173
  • PDF下载量:  564
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-06-10
  • 修回日期:  2010-08-29
  • 刊出日期:  2011-05-15

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