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For the carriers-crowded effect in vertical-cavity surface-emitting laser (VCSEL), the injected current passes mainly through the edge of the circular active region, which results in nonuniformity of the output power density and annular facula with a poor central intensity, especially in large aperture VCSEL. How to restrain carriers-crowded effect becomes a technique problem to develop electrically pumped high power large aperture VCSEL. High power 808 nm VCSEL is demonstrated by introducing a novel structure. And an output power of 0.3 W is achieved at 1 A at room temperature under continuous wave operation.
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Keywords:
- semiconductor laser /
- vertical-cavity surface-emitting laser /
- high power /
- large aperture







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