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H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

李林娜 陈新亮 王斐 孙建 张德坤 耿新华 赵颖

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H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

李林娜, 陈新亮, 王斐, 孙建, 张德坤, 耿新华, 赵颖

Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering

Li Lin-Na, Chen Xin-Liang, Wang Fei, Sun Jian, Zhang De-Kun, Geng Xin-Hua, Zhao Ying
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  • 实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al2O3陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10-4 Ω·cm
    Aluminum doped zinc oxide (AZO) thin films are prepared by pulsed magnetron sputtering in pure argon gas. In order to improve the properties of AZO thin films, we add hydrogen gas into vacuum during sputtering. High purity ceramic ZnO ∶Al2O3 target and hydrogen gas at various flow rates are used as source materials. The microstructure, the surface information, the optical and electrical properties of AZO/H film are investigated. The crystallization, the Hall mobility and the transmission between 400 nm and 1100 nm are enhanced by increasing H2 flow rate, and resistivity is decreased, the lowest resistivities of these films are all 4.435×10-4 Ω·cm, and AZO thin films with 5.664×10-4 Ω·cm are achieved. In this experiment, it is observed that Raman peak is related to defects due to O-vacancies (579 cm-1) in the AZO/H thin films grown at different H2 flow rates. With the increase of hydrogen flow rate, the intensity of Raman peak at 579 cm-1 decreases. Finally, AZO and AZO/H thin films are etched in 0.5% dilute hydrochloric acid. Compared with AZO thin films, AZO/H thin films can be relatively easy to achieve the light trapping structure with crater-type morphology.
    • 基金项目: 国家重点基础研究发展计划(批准号:2006CB202602,2006CB202603)、国家高技术研究发展计划(批准号:2009AA050602)、天津市应用基础及前沿技术研究计划(批准号:09JCYBJC06900)和中央高校基本科研业务费专项资金资助的课题.
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    [3]

    Chen X L, Xue J M, Zhang D K, Sun J, Ren H Z, Zhao Y, Geng X H 2007 Acta Phys. Sin. 56 1563(in Chinese) [陈新亮、薛俊明、张德坤、孙 建、任慧志、赵 颖、耿新华 2007 物理学报 56 1563]

    [4]

    Dewald W, Sittinger V, Werner W, Jacobs C, Szyszka B 2009 Thin Solid Films 518 1085

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    Duan L W, Xue J M, Yang R X, Zhao Y, Geng X H 2008 J. Optoelectron. Laser 19 1206 (in Chinese) [段苓伟、薛俊明、杨瑞霞、赵 颖、耿新华 2008 光电子·激光 19 1206]

    [6]

    Sittinger V, Ruske F, Werner W, Szyszka B, Rech B, Hüpkes J, Schöpe G, Stiebig H 2006 Thin Solid Films 496 16

    [7]

    Ellmer K, Klein A, Rech B 2008 Transparent Conductive Zinc Oxide (New York: Springer) p36

    [8]

    Müller J, Rech B, Springer J, Vanecek M 2004 Sol. Energ. 77 917

    [9]

    Patterson A L 1939 Phys. Rev. 56 978

    [10]

    Tark S J, Ok Y W, Kang M G, Lim W M, Kim D 2009 J. Electroceram. 23 548

    [11]

    Chris G, Walle V 2000 Phys. Rev. Lett. 85 1012

    [12]

    Liu E K, Zhu B S, Luo J S 2005 Semiconductor Physics (4th Ed.)(Beijing: National Defence Industry Press) p256 (in Chinese)[刘恩科、朱炳升、罗晋声 2005 半导体物理学(第4版)(北京: 国防工业出版社) 第256页]

    [13]

    Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C, Wagner H, Löffl, A Schock H W 1999 Thin Solid Films 351 247

    [14]

    Springer J, Rech B, Reetz W, Müller J, Vanecek M 2005 Sol. Energ. Mat. Sol. C 85 1

    [15]

    Berginski M, Hüpkes J, Schulte M Schöpe G, Stiebig H, Rech B 2007 J. Appl. Phys. 101 074903

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    Beyer W, Hüpkes J, Stiebig H 2007 Thin Solid Films 516 147

  • [1]

    Chen X L, Geng X H, Xue J M, Zhang D K, Hou G F, Zhao Y 2006 J. Crystal Growth 296 43

    [2]

    Meier J, Kroll U, Dubail S, Golay S, Fay S, Dubail J, Shah A 2000 Photovoltaic Specialists Conference (Conference Record of the 28th IEEE) AK: Anchorage, USA, September 15—22, 2000 p746

    [3]

    Chen X L, Xue J M, Zhang D K, Sun J, Ren H Z, Zhao Y, Geng X H 2007 Acta Phys. Sin. 56 1563(in Chinese) [陈新亮、薛俊明、张德坤、孙 建、任慧志、赵 颖、耿新华 2007 物理学报 56 1563]

    [4]

    Dewald W, Sittinger V, Werner W, Jacobs C, Szyszka B 2009 Thin Solid Films 518 1085

    [5]

    Duan L W, Xue J M, Yang R X, Zhao Y, Geng X H 2008 J. Optoelectron. Laser 19 1206 (in Chinese) [段苓伟、薛俊明、杨瑞霞、赵 颖、耿新华 2008 光电子·激光 19 1206]

    [6]

    Sittinger V, Ruske F, Werner W, Szyszka B, Rech B, Hüpkes J, Schöpe G, Stiebig H 2006 Thin Solid Films 496 16

    [7]

    Ellmer K, Klein A, Rech B 2008 Transparent Conductive Zinc Oxide (New York: Springer) p36

    [8]

    Müller J, Rech B, Springer J, Vanecek M 2004 Sol. Energ. 77 917

    [9]

    Patterson A L 1939 Phys. Rev. 56 978

    [10]

    Tark S J, Ok Y W, Kang M G, Lim W M, Kim D 2009 J. Electroceram. 23 548

    [11]

    Chris G, Walle V 2000 Phys. Rev. Lett. 85 1012

    [12]

    Liu E K, Zhu B S, Luo J S 2005 Semiconductor Physics (4th Ed.)(Beijing: National Defence Industry Press) p256 (in Chinese)[刘恩科、朱炳升、罗晋声 2005 半导体物理学(第4版)(北京: 国防工业出版社) 第256页]

    [13]

    Kluth O, Rech B, Houben L, Wieder S, Schöpe G, Beneking C, Wagner H, Löffl, A Schock H W 1999 Thin Solid Films 351 247

    [14]

    Springer J, Rech B, Reetz W, Müller J, Vanecek M 2005 Sol. Energ. Mat. Sol. C 85 1

    [15]

    Berginski M, Hüpkes J, Schulte M Schöpe G, Stiebig H, Rech B 2007 J. Appl. Phys. 101 074903

    [16]

    Beyer W, Hüpkes J, Stiebig H 2007 Thin Solid Films 516 147

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  • 被引次数: 0
出版历程
  • 收稿日期:  2010-08-06
  • 修回日期:  2010-09-15
  • 刊出日期:  2011-03-05

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