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The deep levels of the mid-wave infrared HgxCd1-xTe diodes(x=0.31), which are fabricated on Si substrates, are studied using the current-voltage-temperature (IVT) relationship. Firstly, the I-1/(kBT) relationship is fitted when the reverse current is dominated by generation-recombination process, and the deep level Eg/4 is calculated at the reverse bias 0.01 V. Secondly, the deep levels at different reverse biases are investigated. The origins of these deep levels correspond well to the reverse current mechanisms. Finally, the deep levels of different area diodes are calculated and compared. It is confirmed that the deep level is not related to diode area. This result is well corresponding to the theory, and indicates that the experimental method is correct.
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Keywords:
- HgCdTe on Si substrate /
- deep level /
- generation recombination current /
- ideal factor
[1] Johnson S M, Radford W A, Buell A A, Vilela M F, Peterson J M, Franklin J J, Bornfreund R E, Childs A C, Venzor G M, Newton M D, Smith E P G, Ruzicka L M, Pierce G K, Lofgreen D D, de Lyon T J, Jensen J E 2005 SPIE 5732 250
[2] Dhar N K, Tidrow M Z 2004 SPIE 5564 34
[3] Jacobs R N, Almeida L A, Marknuas J, Pellegrino J, Groenrt M, Jaime-vasquez M, Mahadik N, Andrews C, Qadri S B, Lee T, Kim M 2008 J. Electron. Mater. 37 1480
[4] Qiao H, Xu Z Z, Zhang K M 1993 Acta Phys. Sin. 42 1830 (in Chinese)[乔 皓、徐至中、张开明 1993 物理学报 42 1830]
[5] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Xi’an: Xi’an Jiaotong University Press) p37(in Chinese) [刘恩科、朱秉升、罗晋升 1998 半导体物理学(西安:西安交通大学出版社) 第37页]
[6] Yoshion J, Morimoto J, Wada H 1998 Jpn. J. Appl. Phys. 37 4032
[7] Yuan H X, Li Q G, Jiang S, Lu W, Tong F M, Tang D Y 1990 Acta Phys. Sin. 39 464 (in Chinese)[袁皓心、李齐光、姜 山、陆 卫、童斐明、汤定元 1990 物理学报 39 464]
[8] Johnstone D, Golding T D, Hellmer R, Sinan J H, Carmody M 2007 J. Electron. Mater. 36 832
[9] Gopal V, Singh S K, Mehra R M 2002 Infrar. Phys. Technol. 43 317
[10] Hu X W, Zhao J, Lu H Q, Li X Y, Fang J X 1999 Acta Phys. Sin. 48 1107 (in Chinese)[胡新文、赵 军、陆慧庆、李向阳、方家熊 1999 物理学报 48 1107]
[11] Yoshion J, Morimoto J, Wada H 1998 Jpn. J. Appl. Phys. 37 4027
[12] Yue T T, Yin F, Hu X N 2007 Laser Infrar. (Suppl.) (in Chinese) 37 931[岳婷婷、殷 菲、胡晓宁 2007 激光与红外 (增刊) 37 931]
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[1] Johnson S M, Radford W A, Buell A A, Vilela M F, Peterson J M, Franklin J J, Bornfreund R E, Childs A C, Venzor G M, Newton M D, Smith E P G, Ruzicka L M, Pierce G K, Lofgreen D D, de Lyon T J, Jensen J E 2005 SPIE 5732 250
[2] Dhar N K, Tidrow M Z 2004 SPIE 5564 34
[3] Jacobs R N, Almeida L A, Marknuas J, Pellegrino J, Groenrt M, Jaime-vasquez M, Mahadik N, Andrews C, Qadri S B, Lee T, Kim M 2008 J. Electron. Mater. 37 1480
[4] Qiao H, Xu Z Z, Zhang K M 1993 Acta Phys. Sin. 42 1830 (in Chinese)[乔 皓、徐至中、张开明 1993 物理学报 42 1830]
[5] Liu E K, Zhu B S, Luo J S 1998 Semiconductor Physics (Xi’an: Xi’an Jiaotong University Press) p37(in Chinese) [刘恩科、朱秉升、罗晋升 1998 半导体物理学(西安:西安交通大学出版社) 第37页]
[6] Yoshion J, Morimoto J, Wada H 1998 Jpn. J. Appl. Phys. 37 4032
[7] Yuan H X, Li Q G, Jiang S, Lu W, Tong F M, Tang D Y 1990 Acta Phys. Sin. 39 464 (in Chinese)[袁皓心、李齐光、姜 山、陆 卫、童斐明、汤定元 1990 物理学报 39 464]
[8] Johnstone D, Golding T D, Hellmer R, Sinan J H, Carmody M 2007 J. Electron. Mater. 36 832
[9] Gopal V, Singh S K, Mehra R M 2002 Infrar. Phys. Technol. 43 317
[10] Hu X W, Zhao J, Lu H Q, Li X Y, Fang J X 1999 Acta Phys. Sin. 48 1107 (in Chinese)[胡新文、赵 军、陆慧庆、李向阳、方家熊 1999 物理学报 48 1107]
[11] Yoshion J, Morimoto J, Wada H 1998 Jpn. J. Appl. Phys. 37 4027
[12] Yue T T, Yin F, Hu X N 2007 Laser Infrar. (Suppl.) (in Chinese) 37 931[岳婷婷、殷 菲、胡晓宁 2007 激光与红外 (增刊) 37 931]
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