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纳米折叠InGaN/GaN LED材料生长及器件特性

陈贵锋 谭小动 万尾甜 沈俊 郝秋艳 唐成春 朱建军 刘宗顺 赵德刚 张书明

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纳米折叠InGaN/GaN LED材料生长及器件特性

陈贵锋, 谭小动, 万尾甜, 沈俊, 郝秋艳, 唐成春, 朱建军, 刘宗顺, 赵德刚, 张书明

Growth and device characteristics of nano-folding InGaN/GaNmultiple quantum well LED

Chen Gui-Feng, Tan Xiao-Dong, Wan Wei-Tian, Shen Jun, Hao Qiu-Yan, Tang Cheng-Chun, Zhu Jian-Jun, Liu Zong-Shun, Zhao De-Gang, Zhang Shu-Ming
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  • 在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V.
    GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells (MQWs) are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence (PL) spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence (EL) spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect (QCSE) and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.
    • 基金项目: 天津市自然科学基金(批准号:10JCYBJC03000)和中国科学院半导体研究所集成光电子国家重点实验室资助的课题.
    [1]

    Chang C Y, Wu Y R 2010 IEEE Journal of Quantum Electronics 46 6 884

    [2]

    Neufeld C J, Schaake C, Grundmann M, Fichtenbaum N A, Keller S, Mishra U K 2007 Phys. Stat. Sol.(c) 45 1605

    [3]

    Kishino K, Kikuchi A, Sekiguchi H, Ishizawa S 2007 Gallium Nitride Materials and Device Ⅱ 6473 64730T

    [4]

    Kim H M, Cho Y H, Lee H, Kim Suk II, Ryu S R, Kim D Y, Kang T W, Chung K S 2004 Nano Letters 46 1059

    [5]

    Hsueh T H, Huang H W, Kao C C, Chang Y H, Yang M C, Kuo H C, Wang S C 2005 Jpn. J. Appl. Phys. 44 4B 2661

    [6]

    Charlton M D B, Lee T, Zoorob M E, Shields P A, Wang W N 2007 Seventh International Conference on Solid State Lighting San Diego, California August 27—29, 2007 6669 p14

    [7]

    Hu H Y, Lu L, Du W, Liu H W, Kan Q, Wang C X, Xu X S, Chen H D 2007 Solid State Lighting and Solar Energy Technologies 6841 68410J-1-4

    [8]

    Keller S, Schaake C, Fichtenbaum N A, Neufeld C J, Wu Y, McGroddy K, David A, DenBaars S P, Weisbuch C, Speck J S, Mishra U K 2006 J. Appl. Phys. 100 054314

    [9]

    Zhen C C, Yeh C C, 2000 Adv. Mater. (Weinheim, Ger.) 12 738

    [10]

    Yoshizawz M, Kikuchi A, Mori M, Fujita N, Kishino K 1997 Jpn. J. Appl. Phys. 236 459

    [11]

    Kim H M, Kim D S, Kim D Y, Wkang T W, Cho Y H, Chung K S 2002 Appl. Phys. Lett. 81 2193

    [12]

    Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T 2005 Nano Letters 5 1847

  • [1]

    Chang C Y, Wu Y R 2010 IEEE Journal of Quantum Electronics 46 6 884

    [2]

    Neufeld C J, Schaake C, Grundmann M, Fichtenbaum N A, Keller S, Mishra U K 2007 Phys. Stat. Sol.(c) 45 1605

    [3]

    Kishino K, Kikuchi A, Sekiguchi H, Ishizawa S 2007 Gallium Nitride Materials and Device Ⅱ 6473 64730T

    [4]

    Kim H M, Cho Y H, Lee H, Kim Suk II, Ryu S R, Kim D Y, Kang T W, Chung K S 2004 Nano Letters 46 1059

    [5]

    Hsueh T H, Huang H W, Kao C C, Chang Y H, Yang M C, Kuo H C, Wang S C 2005 Jpn. J. Appl. Phys. 44 4B 2661

    [6]

    Charlton M D B, Lee T, Zoorob M E, Shields P A, Wang W N 2007 Seventh International Conference on Solid State Lighting San Diego, California August 27—29, 2007 6669 p14

    [7]

    Hu H Y, Lu L, Du W, Liu H W, Kan Q, Wang C X, Xu X S, Chen H D 2007 Solid State Lighting and Solar Energy Technologies 6841 68410J-1-4

    [8]

    Keller S, Schaake C, Fichtenbaum N A, Neufeld C J, Wu Y, McGroddy K, David A, DenBaars S P, Weisbuch C, Speck J S, Mishra U K 2006 J. Appl. Phys. 100 054314

    [9]

    Zhen C C, Yeh C C, 2000 Adv. Mater. (Weinheim, Ger.) 12 738

    [10]

    Yoshizawz M, Kikuchi A, Mori M, Fujita N, Kishino K 1997 Jpn. J. Appl. Phys. 236 459

    [11]

    Kim H M, Kim D S, Kim D Y, Wkang T W, Cho Y H, Chung K S 2002 Appl. Phys. Lett. 81 2193

    [12]

    Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T 2005 Nano Letters 5 1847

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  • PDF下载量:  727
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-09-25
  • 修回日期:  2010-10-13
  • 刊出日期:  2011-07-15

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