磁性量子元胞自动机逻辑电路的转换特性研究

杨晓阔; 蔡理; 康强; 柏鹏; 赵晓辉; 冯朝文; 张立森

doi:10.7498/aps.60.098503

摘要

本文研究了磁性量子元胞自动机反相器和择多逻辑门等基本逻辑电路在不同纳磁体厚度和间距下的转换特性.采用单畴近似LLG方程对纳磁体以及电路进行了建模和仿真,结果表明更厚的纳磁体需要更大的转换磁脉冲,大厚度纳磁体逻辑电路表现出较慢的转换;相同厚度和间距下,择多逻辑门比反相器的转换时间略长.此外,模拟结果还表明纳磁体间距对反相器的转换过程影响明显,而对择多逻辑门则影响较小.

关键词:

In this paper, switching behaviors of MQCA inverter and majority logic gate with various nanomagnet thicknesses and spacings are studied. Single domain approximation Landau-Lifshitz-Gilbert equation is employed to model and simulate the circuits. It is shown that thicker nanomagnet needs larger switching magnetic pulse and logic circuits comprised of thicker nanomagnet demonstrate slower switching; majority logic gate needs more time to switch than inverter when they have the same nanomagnet thicknesses and spacings. Moreover, it is also shown that nanomagnet spacing has a larger effect on switching behavior of inverter than on majority logic gate.

Keywords:

作者及机构信息

(1)空军工程大学科研部,西安 710051; (2)空军工程大学理学院,西安 710051; (3)空军工程大学综合电子信息系统研究中心,西安 710051

基金项目: 国家高技术研究发展计划(批准号:2008AAJ225)和陕西省电子信息系统综合集成重点实验室基金(批准号:201115Y15)资助的课题.

Authors and contacts

(1)College of Science, Air Force Engineering University, Xi’an, Shaanxi 710051, China; (2)Department of Science Research, Air Force Engineering University, Xi’an 710051, China; (3)Research Center of synthetic Electronic Information System, Air Force Engineering University, Xi’an 710051, China

参考文献

[1]	Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[2]	Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[3]	Hu W, Sarveswaran K, Lieberman M, Bernstein G H 2005 IEEE Trans. Nanotechnol. 4 312
[4]	Yang X K, Cai L, Zhao X H 2010 Electron. Lett. 46 825
[5]	Vankamamidi V, Ottavi M, Lombardi F 2008 IEEE Trans. Comput. 57 606
[6]	Csaba G, Lugli P, Csurgay A, Porod W 2005 J. Comput. Electron. 4 105
[7]	Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[8]	Song S Y, Guo G H, Zhang G F, Song W B 2009 Acta. Phys. Sin. 58 5757 (in Chinese) [宋三元、郭光华、张光富、宋文斌 2009 物理学报 58 5757]
[9]	Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[10]	Kumari A, Bhanja S 2009 IEEE Nanotechnology Materials and Devices Conference 50
[11]	Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Letters 8 4173
[12]	Niemier M, Crocker M, Sharon H X 2008 IEEE International Symposium on Defect and Fault Tolerance of VLSI Systems 534
[13]	Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[14]	Fidler J, Schrefl T 2000 J. Phys. D: Appl. Phys. 33 135

施引文献

[1]	Lent C S, Tougaw P D 1997 Proc. IEEE 85 541
[2]	Amlani I, Orlov A, Toth G, Bernstein G H, Lent C S, Snider G L 1999 Science 284 5412
[3]	Hu W, Sarveswaran K, Lieberman M, Bernstein G H 2005 IEEE Trans. Nanotechnol. 4 312
[4]	Yang X K, Cai L, Zhao X H 2010 Electron. Lett. 46 825
[5]	Vankamamidi V, Ottavi M, Lombardi F 2008 IEEE Trans. Comput. 57 606
[6]	Csaba G, Lugli P, Csurgay A, Porod W 2005 J. Comput. Electron. 4 105
[7]	Imre A, Csaba G, Ji L, Bernstein G H, Porod W 2006 Science 311 205
[8]	Song S Y, Guo G H, Zhang G F, Song W B 2009 Acta. Phys. Sin. 58 5757 (in Chinese) [宋三元、郭光华、张光富、宋文斌 2009 物理学报 58 5757]
[9]	Niemier M, Dingler A, Sharon H X 2008 Proceedings of 26th IEEE International Conference on Computer Design 506
[10]	Kumari A, Bhanja S 2009 IEEE Nanotechnology Materials and Devices Conference 50
[11]	Carlton D B, Emley N C, Tuchfeld E, Bokor J 2008 Nano Letters 8 4173
[12]	Niemier M, Crocker M, Sharon H X 2008 IEEE International Symposium on Defect and Fault Tolerance of VLSI Systems 534
[13]	Alam M T, Siddiq M J, Bernstein G H, Niemier M, Porod W, Sharon H X 2010 IEEE Trans. Nanotechnol. 9 348
[14]	Fidler J, Schrefl T 2000 J. Phys. D: Appl. Phys. 33 135

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