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0.18 m MOSFET器件的总剂量辐照效应

刘张李 胡志远 张正选 邵华 宁冰旭 毕大炜 陈明 邹世昌

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0.18 m MOSFET器件的总剂量辐照效应

刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌

Total ionizing dose effect of 0.18 m nMOSFETs

Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang
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  • 对0.18 m metal-oxide-semiconductor field-effect-transistor (MOSFET)器件进行射线辐照实验,讨论分析器件辐照前后关态漏电流、阈值电压、跨导、栅电流、亚阈值斜率等特性参数的变化,研究深亚微米器件的总剂量效应. 通过在隔离氧化物中引入等效陷阱电荷,三维模拟结果与实验结果符合很好. 深亚微米器件栅氧化层对总剂量辐照不敏感,浅沟槽隔离氧化物是导致器件性能退化的主要因素.
    A 0.18 m MOSFET with shallow trench isolation is exposed to a -ray radiation. The parameters such as off-state leakage current, threshold voltage, transconductance, gate leakage current, and subthreshold slope are analyzed for pre- and post-irradiation. By introducing constant sheet charges at the shallow trench isolation oxide sidewall, good agreement between 3D simulation and experiment result is demonstrated. We believe that the thin gate oxide is insensitive to radiation, and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current, ultimately limiting the tolerance of CMOS circuits.
    • 基金项目: 中国科学院微小卫星重点实验室开放基金资助的课题.
    [1]

    Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. on Nucl. Sci. 55 1833

    [2]
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    Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 3434 (in Chinese)[张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001物理学报 50 2434]

    [4]
    [5]

    Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese)[陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 物理学报 58 4090]

    [6]
    [7]

    Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. on Nuc. Sci. 52 2259

    [8]

    Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Schrimpf R D 2008 Microelect. Reliab. 48 1000

    [9]
    [10]
    [11]

    Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin. J. Semicond. 28 241 (in Chinese)[孟志琴、郝 跃、唐 瑜、马晓华、朱志炜、李永坤 2007 半导体学报 28 241]

    [12]
    [13]

    Wang S H, Lu Q, Wang W H, An X, Huang R 2010 Acta Phys. Sin. 59 1970(in Chinese)[王思浩、鲁 庆、王文华、安 霞、黄 如 2010 物理学报 59 1970]

    [14]

    Benedetto J M, Boesch H E, McLean F B, Mize J P 1985 IEEE Trans. on Nucl. Sci. 32 3916

    [15]
    [16]

    Barnaby H J 2006 IEEE Trans. on Nucl. Sci. 53 3103

    [17]
    [18]
    [19]

    Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instr. and Meth. in Phys. Res. A 582 750

    [20]

    Yo G U, Khare P S, Schrimpf R D, Massengill L W, Galloway K F 1999 IEEE Trans. on Nucl. Sci. 46 1830

    [21]
    [22]

    Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. on Nucl. Sci. 51 3166

    [23]
  • [1]

    Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. on Nucl. Sci. 55 1833

    [2]
    [3]

    Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 3434 (in Chinese)[张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001物理学报 50 2434]

    [4]
    [5]

    Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, Zhang X 2009 Acta Phys. Sin. 58 4090 (in Chinese)[陈伟华、杜 磊、庄奕琪、包军林、何 亮、张天福、张 雪 2009 物理学报 58 4090]

    [6]
    [7]

    Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. on Nuc. Sci. 52 2259

    [8]

    Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, McLain M, Schrimpf R D 2008 Microelect. Reliab. 48 1000

    [9]
    [10]
    [11]

    Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin. J. Semicond. 28 241 (in Chinese)[孟志琴、郝 跃、唐 瑜、马晓华、朱志炜、李永坤 2007 半导体学报 28 241]

    [12]
    [13]

    Wang S H, Lu Q, Wang W H, An X, Huang R 2010 Acta Phys. Sin. 59 1970(in Chinese)[王思浩、鲁 庆、王文华、安 霞、黄 如 2010 物理学报 59 1970]

    [14]

    Benedetto J M, Boesch H E, McLean F B, Mize J P 1985 IEEE Trans. on Nucl. Sci. 32 3916

    [15]
    [16]

    Barnaby H J 2006 IEEE Trans. on Nucl. Sci. 53 3103

    [17]
    [18]
    [19]

    Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instr. and Meth. in Phys. Res. A 582 750

    [20]

    Yo G U, Khare P S, Schrimpf R D, Massengill L W, Galloway K F 1999 IEEE Trans. on Nucl. Sci. 46 1830

    [21]
    [22]

    Turowski M, Raman A, Schrimpf R D 2004 IEEE Trans. on Nucl. Sci. 51 3166

    [23]
计量
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  • PDF下载量:  865
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-12-13
  • 修回日期:  2011-02-15
  • 刊出日期:  2011-11-15

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