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脉冲激光沉积温度及氧压对Bi2Sr2Co2Oy热电薄膜晶体结构与电输运性能的影响

王淑芳 陈珊珊 陈景春 闫国英 乔小齐 刘富强 王江龙 丁学成 傅广生

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脉冲激光沉积温度及氧压对Bi2Sr2Co2Oy热电薄膜晶体结构与电输运性能的影响

王淑芳, 陈珊珊, 陈景春, 闫国英, 乔小齐, 刘富强, 王江龙, 丁学成, 傅广生

The effects of substrate temperature and oxygen pressure on the crystal strcture and transport properties of Bi2Sr2Co2Oy thermoelectric films deposited by pulsed laser deposition

Wang Shu-Fang, Chen Shan-Shan, Chen Jing-Chun, Yan Guo-Ying, Qiao Xiao-Qi, Liu Fu-Qiang, Wang Jiang-Long, Ding Xue-Cheng, Fu Guang-Sheng
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  • 利用脉冲激光沉积技术在c-Al2O3单晶基片上制备了Bi2Sr2Co2Oy热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi2Sr2Co2Oy薄膜的室温电阻率和塞贝克系数S分别为2.9m/cm和110V/K,其功率因子S2/好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2K,9T时达到了40%.
    We fabricate Bi2Sr2Co2Oy films on c-Al2O3 by pulsed laser deposition and investigate the effects of substrate temperature and oxygen pressure on the crystal stucture and the transport properties of the films. The resulting single phase c-axis Bi2Sr2Co2Oy films obtained under the optimal condition have a room temperature resistivity of about 2.9 m/cm and a seebeck coefficient of 110 V/K, leading to a larger power factor than that of the single crystal. In addition, a negative magnetroresistance of 40% at 2K and 9T is observed in the films.
      通信作者: 王淑芳, swang2008@hotmail.com ; 傅广生, swang2008@hotmail.com
    • 基金项目: 国家自然科学基金青年科学基金(批准号: A2009000144)和河北省教育厅重点项目(批准号: ZD200909)资助的课题.
      Corresponding author: Wang Shu-Fang, swang2008@hotmail.com ; Fu Guang-Sheng, swang2008@hotmail.com
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. A2009000144) and the Key Project of Hebei Education Department, China (Grant No. ZD200909)
    [1]

    Zhang F, Zhu H T, Luo J, Liang J K, Rao G H, Liu Q L 2010 Acta Phys. Sin. 59 7232 (in Chinese) [张帆, 朱航天, 骆军, 梁敬魁, 饶光辉, 刘泉林 2010 物理学报 59 7232]

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    Liu H J, Yan Y G, Tang X F, Yin L L, Zhang Q J 2007 Acta Phys. Sin. 56 7309 (in Chinese) [刘海君, 鄢永高, 唐新峰, 尹玲玲, 张清杰 2007 物理学报 56 7309]

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    Terasaki I Sasago Y, Uchinokura K 1997 Phys. Rev. B 56 R12685

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    Schaak R E, Klimczuk T, Foo M L, Cava R J 2003 Nature 424 527

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    Nagao Y, Terasaki I 2007 Phys. Rev. B 76 144203

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    Funahashi R, Shikano M 2000 Appl. Phys. Lett. 81 1459

    [12]

    Kang J S, Han S W, Fujii T, Terasaki I, Lee S S, Kim G, Olson C G, Lee H G, Kim J Y, Min B I 2006 Phys. Rev. B 74 205116

    [13]
    [14]

    Klein Y, Pelloquin D, Hebert S, Maignan A 2005 J. Appl. Phys. 98 013701

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    Funahashi R, Matsubara I, Sodeoka S 2000 Appl. Phys. Lett. 762385

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    Wang S F, Venimadhav A, Guo S M, Chen K, Li Q, Soukiassian A, Schlom D G, Katz M B, Pan X Q, Wong-Ng W, Vaudin M D, Xi X X 2009 Appl. Phys. Lett. 94 022110

    [20]

    Wang S F, Zhang Z C, He L P, Chen M J 2009 Appl. Phys. Lett. 94 022110

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    Itoh T, Terasaki I 2000 Jpn. J. Appl. Phys. 39 6658

    [23]
    [24]
    [25]

    Hebert S, Lambert S, Pelloquin D, Maignan A 2001 Phys. Rev. B 64172101

    [26]

    Koumoto K, Terasaki I, Funahashi R 2006 MRS Bulletin 31 206

    [27]
    [28]

    Yamamoto T, Uchinokura K, Tsukada I 2002 Phys. Rev. B 65 184434

    [29]
    [30]

    Maignan A, Hebert S, Hervieu M, Michel C, Pelloquin D, Khom-skii D 2003 J. Phys.: Condens. Matter 15 2711

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    Masset A C, Michel C, Maignan A, Hervieu M, Toulemonde O, Studer F, Raveau B 2000 Phys. Rev. B 62 166

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    Luo X G, Chen X H, Wang G Y, Wang C H, Xiong Y M 2006 Eur.Phys. J. B 49 37

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  • [1]

    Zhang F, Zhu H T, Luo J, Liang J K, Rao G H, Liu Q L 2010 Acta Phys. Sin. 59 7232 (in Chinese) [张帆, 朱航天, 骆军, 梁敬魁, 饶光辉, 刘泉林 2010 物理学报 59 7232]

    [2]
    [3]

    Liu H J, Yan Y G, Tang X F, Yin L L, Zhang Q J 2007 Acta Phys. Sin. 56 7309 (in Chinese) [刘海君, 鄢永高, 唐新峰, 尹玲玲, 张清杰 2007 物理学报 56 7309]

    [4]

    Terasaki I Sasago Y, Uchinokura K 1997 Phys. Rev. B 56 R12685

    [5]
    [6]
    [7]

    Schaak R E, Klimczuk T, Foo M L, Cava R J 2003 Nature 424 527

    [8]

    Nagao Y, Terasaki I 2007 Phys. Rev. B 76 144203

    [9]
    [10]
    [11]

    Funahashi R, Shikano M 2000 Appl. Phys. Lett. 81 1459

    [12]

    Kang J S, Han S W, Fujii T, Terasaki I, Lee S S, Kim G, Olson C G, Lee H G, Kim J Y, Min B I 2006 Phys. Rev. B 74 205116

    [13]
    [14]

    Klein Y, Pelloquin D, Hebert S, Maignan A 2005 J. Appl. Phys. 98 013701

    [15]
    [16]
    [17]

    Funahashi R, Matsubara I, Sodeoka S 2000 Appl. Phys. Lett. 762385

    [18]
    [19]

    Wang S F, Venimadhav A, Guo S M, Chen K, Li Q, Soukiassian A, Schlom D G, Katz M B, Pan X Q, Wong-Ng W, Vaudin M D, Xi X X 2009 Appl. Phys. Lett. 94 022110

    [20]

    Wang S F, Zhang Z C, He L P, Chen M J 2009 Appl. Phys. Lett. 94 022110

    [21]
    [22]

    Itoh T, Terasaki I 2000 Jpn. J. Appl. Phys. 39 6658

    [23]
    [24]
    [25]

    Hebert S, Lambert S, Pelloquin D, Maignan A 2001 Phys. Rev. B 64172101

    [26]

    Koumoto K, Terasaki I, Funahashi R 2006 MRS Bulletin 31 206

    [27]
    [28]

    Yamamoto T, Uchinokura K, Tsukada I 2002 Phys. Rev. B 65 184434

    [29]
    [30]

    Maignan A, Hebert S, Hervieu M, Michel C, Pelloquin D, Khom-skii D 2003 J. Phys.: Condens. Matter 15 2711

    [31]
    [32]

    Masset A C, Michel C, Maignan A, Hervieu M, Toulemonde O, Studer F, Raveau B 2000 Phys. Rev. B 62 166

    [33]
    [34]

    Luo X G, Chen X H, Wang G Y, Wang C H, Xiong Y M 2006 Eur.Phys. J. B 49 37

    [35]
计量
  • 文章访问数:  3452
  • PDF下载量:  712
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-06-30
  • 修回日期:  2011-08-01
  • 刊出日期:  2012-03-05

脉冲激光沉积温度及氧压对Bi2Sr2Co2Oy热电薄膜晶体结构与电输运性能的影响

    基金项目: 

    国家自然科学基金青年科学基金(批准号: A2009000144)和河北省教育厅重点项目(批准号: ZD200909)资助的课题.

摘要: 利用脉冲激光沉积技术在c-Al2O3单晶基片上制备了Bi2Sr2Co2Oy热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi2Sr2Co2Oy薄膜的室温电阻率和塞贝克系数S分别为2.9m/cm和110V/K,其功率因子S2/好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2K,9T时达到了40%.

English Abstract

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