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包覆燃料颗粒碳化硅层的Raman光谱研究

房超 刘马林

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包覆燃料颗粒碳化硅层的Raman光谱研究

房超, 刘马林

The study of the Raman spectra of SiC layers in TRISO particles

Fang Chao, Liu Ma-Lin
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  • 本文研究了球床高温气冷堆燃料元件中包覆颗粒碳化硅层的Raman光谱. 通过分析不同制备条件下的碳化硅层断面的Raman光谱的峰位、半高全宽与强度, 明确了包覆颗粒中碳化硅层的晶相特征、密度变化和剩余应力等物性.通过分析不同密度碳化硅层一级Raman峰的同步、异步二维相关谱, 发现其LO模较TO模对于密度变化的响应更敏感. 这些结论为研究球床高温气冷堆燃料元件包覆颗粒中碳化硅层的结构及其物性有指导意义.
    The Raman spectra of the SiC layers in TRISO particles of fuel elements of HTGRs are studied. Through the analysis of the Raman shifts, the FWHM and intensities, the crystal phases, the residual stress and densities of SiC layers and corresponding spectroscopic features are clarified. The study of the 2D correlation spectrum of first order Raman scattering of SiC layer shows that the LO mode is much more sensitive than the TO mode to the change of density of SiC layer. All these conclusions are significant for synthesising TRISO particles and fuel elements of HTGRs and estimating their qualities.
    • 基金项目: 家重大科技专项经费(批准号: ZX06901)和国家自然科学基金(批准号: 11104156)资助的课题.
    • Funds: Project supported by the National ST Major Project (Grant No. ZX06901), and the National Natural Science Foundation of China (Grant No. 11104156).
    [1]

    Zhang Z, Yu S 2002 Nucl.Eng. Des. 218 249

    [2]

    Ball S J, Morris R N 2008 ORNL/NRC/LTR-07

    [3]

    IAEA-TECDOC-978 1997 International Atomic Energy Agency

    [4]

    Wu Z X, Zhang Z Y 2004 Advanced Nuclear Power System and High-temperature Gas-cooled Reactor (First Edition) (Beijing: Tsinghua University Press) (in Chinese) [吴宗鑫, 张作义 2004 先进核能系统和高温气冷堆 (第1版) (北京: 清华大学出版社)]

    [5]

    Kissane M P 2009 Nucl.Eng. Des. 239 3076

    [6]

    Fang C, Wu G Z 2009 Acta. Phys. Sin. 58 2345 (in Chinese) [房超, 吴国祯 2009 物理学报 58 2345]

    [7]

    Fang C, Sun L F 2011 Chin.Phys. B 20 043301

    [8]

    Liu M, Liu B, Shao Y L, Fang C 2011 At.Energ.Sci. Technol, accepted (in Chinese) [刘马林, 刘兵, 邵友林, 房超 2011 原子能科学技术, 已接受]

    [9]

    Feng Z C 2004 SiC Power Materials: Devices and Applications (Berlin: Springer)

    [10]

    Rohmfeld S, Hundhansen M, Ley L 1998 Phys. Rev. B 58 9858

    [11]

    Nakashima S, Harima H 1997 Phys. Stat. Sol. (a) 162 5

    [12]

    Lysenko V, Barbier D, Champagnon B 2001 Appl. Phys. Lett. 79 2366

    [13]

    Hélary D, Bourrat X, Dugne O, Maveyraud G, Pérez M 2004 Proceedings of 2nd International Topical Meeting on HTR Technology

    [14]

    Windl W, Karch K, Pavone P 1994 Phys. Rev. B 49 8764

    [15]

    Yan Y, Huang F M, Zhang S L, Zhu B F, Shang E Y, Fan S S 2011 Chinese Journal of Semiconductors 22 726 (in Chinese) [阎研, 黄福敏, 张树霖, 朱邦芬, 尚尔轶, 范守善 2001 半导体学报 22 726]

    [16]

    Noda I, Dowrey A E, Marcott C 1988 Appl. Spectrosc. 42 203

    [17]

    Noda I 1989 J. Amer. Chem. Soc. 111 8116

    [18]

    Noda I 1990 Appl. Spectrosc. 44 550

  • [1]

    Zhang Z, Yu S 2002 Nucl.Eng. Des. 218 249

    [2]

    Ball S J, Morris R N 2008 ORNL/NRC/LTR-07

    [3]

    IAEA-TECDOC-978 1997 International Atomic Energy Agency

    [4]

    Wu Z X, Zhang Z Y 2004 Advanced Nuclear Power System and High-temperature Gas-cooled Reactor (First Edition) (Beijing: Tsinghua University Press) (in Chinese) [吴宗鑫, 张作义 2004 先进核能系统和高温气冷堆 (第1版) (北京: 清华大学出版社)]

    [5]

    Kissane M P 2009 Nucl.Eng. Des. 239 3076

    [6]

    Fang C, Wu G Z 2009 Acta. Phys. Sin. 58 2345 (in Chinese) [房超, 吴国祯 2009 物理学报 58 2345]

    [7]

    Fang C, Sun L F 2011 Chin.Phys. B 20 043301

    [8]

    Liu M, Liu B, Shao Y L, Fang C 2011 At.Energ.Sci. Technol, accepted (in Chinese) [刘马林, 刘兵, 邵友林, 房超 2011 原子能科学技术, 已接受]

    [9]

    Feng Z C 2004 SiC Power Materials: Devices and Applications (Berlin: Springer)

    [10]

    Rohmfeld S, Hundhansen M, Ley L 1998 Phys. Rev. B 58 9858

    [11]

    Nakashima S, Harima H 1997 Phys. Stat. Sol. (a) 162 5

    [12]

    Lysenko V, Barbier D, Champagnon B 2001 Appl. Phys. Lett. 79 2366

    [13]

    Hélary D, Bourrat X, Dugne O, Maveyraud G, Pérez M 2004 Proceedings of 2nd International Topical Meeting on HTR Technology

    [14]

    Windl W, Karch K, Pavone P 1994 Phys. Rev. B 49 8764

    [15]

    Yan Y, Huang F M, Zhang S L, Zhu B F, Shang E Y, Fan S S 2011 Chinese Journal of Semiconductors 22 726 (in Chinese) [阎研, 黄福敏, 张树霖, 朱邦芬, 尚尔轶, 范守善 2001 半导体学报 22 726]

    [16]

    Noda I, Dowrey A E, Marcott C 1988 Appl. Spectrosc. 42 203

    [17]

    Noda I 1989 J. Amer. Chem. Soc. 111 8116

    [18]

    Noda I 1990 Appl. Spectrosc. 44 550

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  • PDF下载量:  828
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-08-14
  • 修回日期:  2012-05-10
  • 刊出日期:  2012-05-05

包覆燃料颗粒碳化硅层的Raman光谱研究

  • 1. 清华大学核能与新能源技术研究院, 北京 100084
    基金项目: 

    家重大科技专项经费(批准号: ZX06901)和国家自然科学基金(批准号: 11104156)资助的课题.

摘要: 本文研究了球床高温气冷堆燃料元件中包覆颗粒碳化硅层的Raman光谱. 通过分析不同制备条件下的碳化硅层断面的Raman光谱的峰位、半高全宽与强度, 明确了包覆颗粒中碳化硅层的晶相特征、密度变化和剩余应力等物性.通过分析不同密度碳化硅层一级Raman峰的同步、异步二维相关谱, 发现其LO模较TO模对于密度变化的响应更敏感. 这些结论为研究球床高温气冷堆燃料元件包覆颗粒中碳化硅层的结构及其物性有指导意义.

English Abstract

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