TiO2/CdSe多层膜结构的制备及光电化学性能研究

李立群; 刘爱萍; 赵海新; 崔灿; 唐为华

doi:10.7498/aps.61.108201

摘要

采用电化学方法在导电的ITO/TiO2 薄膜上沉积了棕红色CdSe薄膜, 并制得TiO2/CdSe多层膜体系,研究了多层膜的微结构和光电化学性能. 实验表明, CdSe薄膜沿着(111)方向择优生长, 多层膜结构的厚度和紫外-可见光吸收强度随着沉积层数的增加而增加. 通过测定多层膜电极的光电化学性能表明, 二层膜体系的开路电压和短路电流密度最大,光电化学性能最好.

关键词:

The red-brown CdSe thin films are electrochemically deposited on conductive ITO/TiO2 film surfaces, and the multilayer TiO2/CdSe structures are constructed. The microstructures and the photoelectrochemical properties of multilayer TiO2/CdSe structures are investigated. The results show that the CdSe thin films are grown preferentially along the (111) direction. The thickness and UV-Vis absorbance intensity of multilayer films increase with the increase of layer number of TiO2/CdSe structure. The results obtained from photoelectrochemistry measurement indicate that the optimal photoelectrochemical current response and open-circuit voltage are obtained in a biolayer TiO2/CdSe system, which therefore demonstrates the favorable photoelectrochemical properties.

Keywords:

作者及机构信息

1.
浙江理工大学物理系光电材料与器件中心, 先进纺织材料与制备技术教育部重点实验室, 杭州 310018;

2.
浙江大学硅材料国家重点实验室, 杭州 310027

基金项目: 国家自然科学基金(批准号: 50902123, 51172208, 60806045)、硅材料国家重点实验室访问学者基金(批准号: SKL2011-20)、先进纺织材料与制备技术教育部重点实验室(浙江理工大学)优秀青年人才培养基金 (批准号: 2011QN05)、浙江省钱江人才计划项目(批准号: QJD1102007)、浙江理工大学教育教学改革研究项目 (批准号: el1107)和浙江理工大学科研启动基金(批准号: 0813824-Y)资助的课题.

Authors and contacts

1.
Center for Optoelectronics Materials and Devices, Department of Physics, Key Laboratory of Advanced Textile Materials and Manufacturing Technology of Ministry of Education, Zhejiang Sci-Tech University, Hangzhou 310018, China;

2.
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50902123, 51172208, 60806045), the Visiting Scholars Fund of State Key Laboratory of Silicon Materials, China (Grant No. SKL2011-20), the Excellent Young Talents Foundation of Key Laboratory of Advanced Textile Materials and Manufacturing Technology (Zhejiang Sci-Tech University), China (Grant No. 2011QN05), the Qianjiang Talent Program of Zhejiang Province, China (Grant No. QJD1102007), the Education and Teaching Research Program of Zhejiang Sci-Tech University, China (Grant No. el1107), and the Scientific Research Foundation of Zhejiang Sci-Tech University, China (Grant No. 0813824-Y).

参考文献

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施引文献

[1]	Chen X, Mao S S 2007 Chem. Rev. 107 2891
[2]	Gao L, Zhang J M 2010 Acta Phys. Sin. 59 1263 (in Chinese) [高立, 张建民 2010 物理学报 59 1263]
[3]	Zhu K, Neale N R, Miedaner A, Frank A J 2007 Nano Lett. 7 69
[4]	Gao F, Wang Y, Shi D, Zhang J, Wang M K, Jing X Y, Humphry-Baker R, Wang P, Zakeeruddin S M, Gratzel M 2008 J. Am. Chem. Soc. 130 10720
[5]	Bai Y, Cao Y M, Zhang J, Wang M, Li R Z, Wang P, Zakeeruddin S M, Gratzel M 2008 Nat. Mater. 7 626
[6]	Kou D X, Liu W Q, Hu L H, Huang Y, Dai S Y, Jiang N Q 2010 Acta Phys. Sin. 59 5857 (in Chinese) [寇东星, 刘伟庆, 胡林华, 黄阳, 戴松元, 姜年权 2010 物理学报 59 5857]
[7]	Liu W Q, Kou D X, Hu L H, Huang Y, Jiang N Q, Dai S Y 2010 Acta Phys. Sin. 59 5141 (in Chinese) [刘伟庆, 寇东星, 胡林华, 黄阳, 姜年权, 戴松元 2010 物理学报 59 5141]
[8]	Liu W Q, Kou D X, Cai M L, Hu L H, Sheng J, Tian H J, Jiang N Q, Dai S Y 2010 J. Phys. Chem. C 114 9965
[9]	Kongkanand A, Tvrdy K, Takechi K, Kuno M, Kamat P V 2008 J. Am. Chem. Soc. 130 4007
[10]	Wang G M, Yang X Y, Qian F, Zhang J Z, Li Y 2010 Nano Lett. 10 1088
[11]	Sun W T, Yu Y, Pan H Y, Gao X F, Chen Q, Peng L M 2008 J. Am. Chem. Soc. 130 1124
[12]	Chen T, Colver P J, Bon S A F 2007 Adv. Mater. 19 2286
[13]	Mor G K, Shankar K, Paulose M, Varghese O K, Grimes C A 2007 Appl. Phys. Lett. 91 3
[14]	Peng R X, Chen C, Shen W, Wang M T, Guo Y, Geng H W 2009 Acta Phys. Sin. 58 6582 (in Chinese) [彭瑞祥, 陈冲, 沈薇, 王命泰, 郭颖, 耿宏伟 2009 物理学报 58 6582]
[15]	Fu A H, Gu W W, Boussert B, Koski K, Gerion D, Manna L, Le Gros M, Larabell C A, Alivisatos A P 2007 Nano Lett. 7 179
[16]	Robel I, Subramanian V, Kuno M, Kamat P V 2006 J. Am. Chem. Soc. 128 2385
[17]	Weiss E A, Porter V J, Chiechi R C, Geyer S M, Bell D C, Bawendi M G, Whitesides G M 2008 J. Am. Chem. Soc. 130 83
[18]	Bhuse V M 2005 Mater. Chem. Phys. 91 60
[19]	Diguna L J, Shen Q, Kobayashi J, Toyoda T 2007 Appl. Phys. Lett. 91 3
[20]	Konda R B, Mundle R, Mustafa H, Bamiduro O, Pradhana A K, Roy U N, Cui Y, Burger A 2007 Appl. Phys. Lett. 91 3
[21]	Akaltun Y, Yildirim M A, Ates A, Yildirim M 2011 Opt. Commun. 284 2307
[22]	Chong L W, Chien H T, Lee Y L 2010 J. Power Sources 95 5109
[23]	Ptatschek V, Schreder B, Herz K, Hilbert U, Ossau W, Schottner G, Rahauser O, Bischof T, Lermann G, Materny A, Kiefer W, Bacher G, Forchel A, Su D, Giersig M, Muller G, Spanhel L 1997 J. Phys. Chem. B 101 8898
[24]	Yang Q M, Zhao J, Guan M, Liu C, Cui L J, Han D J, Zeng Y P 2007 Appl. Surf. Sci. 257 9038
[25]	Rashwan S M, Abd El-Wahab S M, Mohamed M M 2007 J. Mater. Sci-Mater. Electron. 18 575
[26]	Pawar S M, Moholkar A V, Rajpure K Y, Bhosale C H 2008 Sol. Energy Mater. Sol. Cells 92 45
[27]	Lincot D 2005 Thin Solid Films 487 40
[28]	Shpaisman N, Givan U, Patolsky F 2010 ACS Nano 4 1901
[29]	Kressin A M, Doan V V, Klein J D, Sailor M J 1991 Chem. Mat. 3 1015
[30]	Henriquez R, Badan A, Grez P, Munoz E, Vera J, Dalchiele E A, Marotti R E, Gomez H 2011 Electrochim. Acta 56 4895
[31]	Mane R S, Roh S J, Joo O S, Lokhande C D, Han S H 2005 Electrochim. Acta 50 2453
[32]	Liu D, Kamat P V 1993 J. Phys. Chem. 97 10769
[33]	Kondon M, Kim J, Udawatte N, Lee D 2008 J. Phys. Chem. C 112 6695
[34]	Guo C X, Yang H B, Sheng Z M, Lu Z S, Song Q L, Li C M 2010 Angew. Chem-Int. Edit. 49 3014
[35]	Kou D X, Jiang N Q 2010 Acta Phys. Sin. 59 643 (in Chinese) [寇东星, 姜年权 2010 物理学报 59 643]

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