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硫系玻璃晶化过程中析出晶相的控制是硫系玻璃陶瓷制备中的一个重要环节. 在制得的65GeS225Ga2S310CsI(GGC25)和70GeS220Ga2S310CsI(GGC20)玻璃和玻璃陶瓷基础上, 利用可见近红外透过光谱, SEM, XRD, Raman光谱等测试技术表征了其透过性能、晶粒尺寸、晶相类型等信息. 研究发现在这两组玻璃样品中少量的组分差别就能导致其显著的析晶行为改变: GGC20玻璃在热处理过程中析出的是GeS2晶体; GGC25样品则拥有两步析晶过程, 其率先析出Ga2S3, 而后才有GeS2晶体出现. 此外, 研究讨论了这种析晶行为与组成的依赖关系及其与玻璃网络结构之间联系, 可为今后硫系玻璃的可控晶化研究提供实验依据和理论指导.Controllable precipitation of crystals is one of the key points in the fabrication of chalcogenide glass-ceramics. Glass compositions of 65GeS225Ga2S310CsI (GGC25) and 70GeS220Ga2S310CsI (GGC20) are specifically selected, and their glass-ceramic samples are obtained by careful heat treatment. The transmission spectra, grain sizes, and crystal phases of obtained samples are characterized using visible-near IR spectroscopy, SEM, XRD, and Raman scattering. Different crystallization behaviors are evidenced that GeS2 crystals are precipitated in GGC20 glass, and GGC25 samples show two crystallization mechanisms during the heat treatment, that is, Ga2S3 crystals were first precipitated and then the GeS2 ones. The compositional and the microstructural dependences of crystallization behavior are discussed, which would be a significant reference for the controllable crystallization in chalcogenide glasses.
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Keywords:
- chalcogenide glass /
- crystallization /
- glass network structure /
- Raman spectroscopy
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[13] Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235
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[15] Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145
[16] Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29
[17] Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591
[18] Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193
[19] Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327
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[1] Sanghera J S, Aggarwal I D 1999 J. Non-Cryst. Solids 256-257 6
[2] Zakery A, Elliott S R 2003 J. Non-Cryst. Solids 330 1
[3] Song B A, Dai S X, Xu T F, Nie Q H, Shen X, Wang X S, Lin C G 2011 Acta Phys. Sin. 60 084217 (in Chinese) [宋宝安, 戴世勋, 徐铁峰, 聂秋华, 沈祥, 王训四, 林常规 2011 物理学报 60 084217]
[4] Sun J, Nie Q, Wang G, Dai S, Zhang W, Song B, Shen X, Xu T 2011 Acta Phys. Sin. 60 114212 (in Chinese) [孙杰, 聂秋华, 王国祥, 戴世勋, 张巍, 宋宝安, 沈祥, 徐铁峰 2011 物理学报 60 114212]
[5] Mecholsky Jun J J, Moynihan C T, Macedo P B Srinivasan G R 1976 J. Mater. Sci. 11 1952
[6] Zhang X, Hongli M A Lucas J 2004 J. Non-Cryst. Solids 337 130
[7] Zhang X H, Calvez L, Seznec V, Ma H L, Danto S, Houizot P, Boussard-Plédel C, Lucas J 2006 J. Non-Cryst. Solids 352 2411
[8] Lin C, Calvez L, Bureau B, Ledemi Y, Xu Y, Tao H, Zhang X Zhao X 2010 J. Optoelectron Adv. M. 12 1684
[9] Lin C, Calvez L, Bureau B, Tao H, Allix M, Hao Z, Seznec V, Zhang X Zhao X 2010 Phys. Chem. Chem. Phys. 12 3780
[10] Lin C, Calvez L, Rozé M, Tao H, Zhang X Zhao X 2009 Appl. Phys. A Mater. 97 713
[11] Heo J, Min Yoon J, Ryou S Y 1998 J. Non-Cryst. Solids 238 115
[12] Tverjanovich A, Tveryanovich YS Loheider S 1996 J. Non-Cryst. Solids 208 49
[13] Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235
[14] Lin C, Calvez L, Tao H, Allix M, Moréac A, Zhang X Zhao X 2011 J. Solid. State. Chem. 184 584
[15] Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145
[16] Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29
[17] Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591
[18] Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193
[19] Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327
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