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The spin-dependent transport through double quantum-dot-array coupled to a single quantum dot is studied by using the non-equilibrium Green function formalism. Due to the quantum interference and the spin-dependent phase induced by Rashba spin-orbit interaction, the spin of the electron through the device is polarized. When the energy level of quantum dot is in the bias window, the spin accumulation in the single quantum dot can maintain a large value in a wide range of energy and the quantum dot is largely spin polarized. The spin accumulations in the single quantum dot under positive bias and negative bias are absolutely different because of asymmetric quantum dot structure. These results is helpful for designing and fabricateing the practical spintronics devices.
[1] Sun Q F, Wang J, Guo H 2005 Phys. Rev. B 71 165310
[2] Lü H F, Guo Y 2007 Appl. Phys. Lett. 91 092128
[3] Chi F, Zheng 2008 J. Appl. Phys. Lett. 92 062106
[4] Li S S, Xia J B 2008 Appl. Phys. Lett. 92 022102
[5] An X T, Liu J J 2007 J. Appl. Phys. 102 123706
[6] He Z L, Lü T Q, Cui L, Xue H J, Li L J, Yin H T 2011 Chin. Phys. B 20 117303
[7] Buljan M, Bogdanović-Radović I, Karlusić M, Desnica U V, Drazić G, Radić N, Dubcek P, Salamon K, Bernstorff S, Holy V 2009 Appl. Phys. Lett. 95 063104
[8] Yin Y Q, Li H, Ma J N, He Z L, Wang X Z 2009 Acta Phys. Sin. 58 4162 (in Chinese) [尹永琦, 李华, 马佳宁, 贺泽龙, 王选章 2009 物理学报 58 4162]
[9] Deng Y X, Yan X H, Tang N S 2009 Acta Phys. Sin. 55 2027 (in Chinese) [邓宇翔, 颜晓红, 唐娜斯 2006 物理学报 55 2027]
[10] Wu L J, Han Y, Gong W J, Tan T Y, 2011 Acta Phys. Sin. 60 107303 (in Chinese) [吴丽君, 韩宇, 公卫江, 谭天亚 2011 物理学报 60 107303]
[11] Wang Q, Liu J, Tang N, Zeng H S 2011 Chin. Phys. B 20 020303
[12] Yang M, Ran X J, Cui Y, Wang R Q 2011 Chin. Phys. B 20 097201
[13] Xia J J, Nie Y H 2011 Chin. Phys. B 20 097306
[14] Ojeda J H, Pacheco M, Orellana P A 2009 Nanotechnology 20 434013
[15] An X T, Liu J J 2009 Appl. Phys. Lett. 95 163501
[16] An X T, Liu J J 2010 Appl. Phys. Lett. 96 223508
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[1] Sun Q F, Wang J, Guo H 2005 Phys. Rev. B 71 165310
[2] Lü H F, Guo Y 2007 Appl. Phys. Lett. 91 092128
[3] Chi F, Zheng 2008 J. Appl. Phys. Lett. 92 062106
[4] Li S S, Xia J B 2008 Appl. Phys. Lett. 92 022102
[5] An X T, Liu J J 2007 J. Appl. Phys. 102 123706
[6] He Z L, Lü T Q, Cui L, Xue H J, Li L J, Yin H T 2011 Chin. Phys. B 20 117303
[7] Buljan M, Bogdanović-Radović I, Karlusić M, Desnica U V, Drazić G, Radić N, Dubcek P, Salamon K, Bernstorff S, Holy V 2009 Appl. Phys. Lett. 95 063104
[8] Yin Y Q, Li H, Ma J N, He Z L, Wang X Z 2009 Acta Phys. Sin. 58 4162 (in Chinese) [尹永琦, 李华, 马佳宁, 贺泽龙, 王选章 2009 物理学报 58 4162]
[9] Deng Y X, Yan X H, Tang N S 2009 Acta Phys. Sin. 55 2027 (in Chinese) [邓宇翔, 颜晓红, 唐娜斯 2006 物理学报 55 2027]
[10] Wu L J, Han Y, Gong W J, Tan T Y, 2011 Acta Phys. Sin. 60 107303 (in Chinese) [吴丽君, 韩宇, 公卫江, 谭天亚 2011 物理学报 60 107303]
[11] Wang Q, Liu J, Tang N, Zeng H S 2011 Chin. Phys. B 20 020303
[12] Yang M, Ran X J, Cui Y, Wang R Q 2011 Chin. Phys. B 20 097201
[13] Xia J J, Nie Y H 2011 Chin. Phys. B 20 097306
[14] Ojeda J H, Pacheco M, Orellana P A 2009 Nanotechnology 20 434013
[15] An X T, Liu J J 2009 Appl. Phys. Lett. 95 163501
[16] An X T, Liu J J 2010 Appl. Phys. Lett. 96 223508
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