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现代可编程约瑟夫森电压基准的核心器件是约瑟夫森结阵.目前最具有优势的约瑟夫森结阵是 Nb/NbxSi1-x/Nb材料的结阵. Nb/NbxSi1-x/Nb材料的约瑟夫森结 具有三层薄膜的制作过程简便, Nb和NbxSi1-x刻蚀工艺相同以及NbxSi1-x 势垒层成分可调等优点.中国计量科学研究院设计制作了Nb/NbxSi1-x/Nb约瑟夫森单结. 通过在4.2 K低温下对所做单结进行直流电流-电压特性测量,观测到了清晰的超导隧穿电流和 从零电压态向电压态的跳变,最后就测量结果进行了分析讨论.此项工作属于国内首个开展 Nb/NbxSi1-x/Nb材料约瑟夫森单结研究的工作.The core device of Modern programmable Josephson voltage standard is Josephson junction array. The most advantageous Josephson junction array is Nb/NbxSi1-x/Nb material array. The advantages of Nb/NbxSi1-x/Nb material Josephson junction are that three-layer film production process is simple, Nb and NbxSi1-x etching processes are the same and NbxSi1-x potential barrier layer components can be easily adjusted. In this paper, we investigate the NbxSi1-x/Nb single Josephson junction in National Institute of Metrology. Through measuring the dc current-voltage characteristics under low temperature (4.2 K), superconducting tunneling current and a zero voltage state jumping to voltage state are observed clearly, finally the measurement results are discussed. The work is the first study on Nb/NbxSi1-x/Nb single Josephson junction in China.
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Keywords:
- Josephson junction /
- Nb /
- NbxSi1-x /
- Josephson voltage standard
[1] Hamilton C A, Lloyd Frances L 1987 IEEE Electron Device Letters 8 449
[2] Schulze H, Behr R 1998 Appl. Phys. 73 996
[3] Yamanori H, Ishizaki M, Shoji A 2006 Appl. Phys. Lett. 88 042503
[4] Benz S P, Hamilton C A, Burroughs C J, Harvey T E, Christian L A 1997 Appl. Phys. Lett. 71 1866
[5] Chong Y, Burroughs C J, Dresselhaus P D, Hadacek N, Yamamori H, Benz S P 2005 IEEE Trans. Appl. Supercond. 15 461
[6] Barrera A S, Beaseley M R 1987 IEEE Trans. Magn. MAG-23 866
[7] Beak Burm, Dreesselhaus Paul D, Benz Samuel P 2006 IEEE Trans.Appl. Supercond. 16 1966
[8] Mueller F, Behr R, Weimann T, Palafox L, Olaya D, Dresselhaus P D, Benz S P 2009 IEEE Trans. Appl. Supercond. 19 981
[9] Dresselhaus Paul D, Elsbury Michael M, Olaya David, Burroughs Charles J, Benz Samuel P 2011 IEEE Trans. Appl. Supercond. 21 693
[10] Gurvitch M, Washington M A, Huggins H A 1983 Appl. Phys. Lett. 42 472
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[1] Hamilton C A, Lloyd Frances L 1987 IEEE Electron Device Letters 8 449
[2] Schulze H, Behr R 1998 Appl. Phys. 73 996
[3] Yamanori H, Ishizaki M, Shoji A 2006 Appl. Phys. Lett. 88 042503
[4] Benz S P, Hamilton C A, Burroughs C J, Harvey T E, Christian L A 1997 Appl. Phys. Lett. 71 1866
[5] Chong Y, Burroughs C J, Dresselhaus P D, Hadacek N, Yamamori H, Benz S P 2005 IEEE Trans. Appl. Supercond. 15 461
[6] Barrera A S, Beaseley M R 1987 IEEE Trans. Magn. MAG-23 866
[7] Beak Burm, Dreesselhaus Paul D, Benz Samuel P 2006 IEEE Trans.Appl. Supercond. 16 1966
[8] Mueller F, Behr R, Weimann T, Palafox L, Olaya D, Dresselhaus P D, Benz S P 2009 IEEE Trans. Appl. Supercond. 19 981
[9] Dresselhaus Paul D, Elsbury Michael M, Olaya David, Burroughs Charles J, Benz Samuel P 2011 IEEE Trans. Appl. Supercond. 21 693
[10] Gurvitch M, Washington M A, Huggins H A 1983 Appl. Phys. Lett. 42 472
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