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GaN MMIC中SiN介质MIM电容的可靠性

王鑫华 王建辉 庞磊 陈晓娟 袁婷婷 罗卫军 刘新宇

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GaN MMIC中SiN介质MIM电容的可靠性

王鑫华, 王建辉, 庞磊, 陈晓娟, 袁婷婷, 罗卫军, 刘新宇

Reliability of SiN-based MIM capacitors in GaN MMIC

Wang Xin-Hua, Wang Jian-Hui, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Liu Xin-Yu
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  • 本文通过恒定应力加速实验对GaN微波单片集成电路中SiN介质MIM电容的可靠性进行了评估, 研究了高场下MIM电容的两种失效模式、临界介质击穿电荷密度以及平均失效前时间. 通过不同温度下介质电容的导电特性求解了介质内的缺陷能级.重点分析了SiN介质MIM电容的退化机理, 研究认为高应力下介质内产生新的施主型缺陷,并占据主导地位,其缺陷能级逐渐向深能级转移; 缺陷的持续增加加剧了介质内载流子的散射,导致应力后期泄漏电流降低. SiN介质MIM电容退化机理的研究为加固介质电容提供了依据.
    Reliability assessment of SiN MIM capacitors in GaN MMIC is performed by constant voltage stress test. Two kinds of failure modes, critical charge density at which the dielectric breaks down and mean time prior to failure are investigated. The trap energy level in SiN dielectric is obtained by temperature dependent current characteristics. The degradation mechanism of SiN MIM capacitor is analyzed. The research shows that new donor-like traps are generated at dominant position during the stress. And the trap energy level becomes deeper after stress. The increased trap accelerates the scattering of the carrier, which leads to the decrease of leakage current in the end. The investigation on the failure mechanism of SiN MIM capacitor provides a reference for reinforcing the dielectric capacitors.
    • 基金项目: 国家重点基础研究计划(973)项目(批准号: 2010CB327500)资助的课题.
    • Funds: Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500).
    [1]

    Dammann M, Ca uml sar M, Konstanzer H, Waltereit P, Quay R, Bronner W, Kiefer R, Mu uml ller S, Mikulla M, van der Wel P J, Ro uml dle T, Bourgeois F, Riepe K 2010 IEEE International Reliability Physics Symposium Anaheim CA, USA, May 2-6, 2010 p129

    [2]

    Waltereit P, Bronner W, Quay R, Dammann M, Kiefer R, Muller S, Musser M, Kuhn J, van Raay F, Seelmann M, Mikulla M, Ambacher O, van Rijs F, Rodle T, Riepe K 2009 Phys. Status Solidi A 206 1215

    [3]

    Scarpulla J, Eng D C, Olson S R,Wu C S 1999 37th Ieee International Reliability Physics Symposium Proceedings, San Diego CA, USA, March 23-25, 1999 p128

    [4]

    Cramer H C, Oliver J D, Porter R J 2006 CS MANTECH Conference, Vanco uver, British Columbia, Canada, April 24-27, 2006 p91

    [5]

    Sefa D, Del Alamo J A, Gajewski D A, Allen H 2009 CS MANTECH Conference, Tampa Florida, USA, May 18-21, 2009

    [6]

    Slater R D 2010 CS MANTECH Conference, Portland Oregon, USA, May 17-20, 2010

    [7]

    Berman A 1981 19th Annual Reliability Physics Proceedings, Orlando FL, USA, April 7-9, 1981 p204

    [8]

    Hu H S, Zhang M, Lin L J 2000 Acta Electron. Sinica 28 80 (in Chinese) [胡恒升, 张敏, 林立谨 2000 电子学报 28 80]

    [9]

    Lai S K 1983 J. Appl. Phys. 54 2540

    [10]

    Scott R S, Dumin N A, Hughes T W, Dumin D J, Moore B T 1995 33rd IEEE International Reliability Physics Symposium Proceedings Las Vegas NV, USA, April 4-6, 1995 p131

    [11]

    Scarpulla J, Ahlers E D, Eng D C, Leung D L, Olson S R, Chan-Shin W 1998 GaAs Reliability Workshop Proceedings, Atlanta GA, USA, November 1, 1998 p92

    [12]

    Huang Y, Niu L R, Lin L 2005 Reseach & Progress of SSE 25 315 (in Chinese) [黄云, 钮利荣, 林丽 2005 固体电子学研究与进展 25 315]

    [13]

    Ryuzaki D, Ishida T, Furusawa T 2003 J. Electrochem. Soc. 150 F203

    [14]

    Yeargan J R, Taylor H L 1968 J. Appl. Phys. 39 5600

    [15]

    Yeats B 1998 IEEE Trans. Electron Dev. 45 939

  • [1]

    Dammann M, Ca uml sar M, Konstanzer H, Waltereit P, Quay R, Bronner W, Kiefer R, Mu uml ller S, Mikulla M, van der Wel P J, Ro uml dle T, Bourgeois F, Riepe K 2010 IEEE International Reliability Physics Symposium Anaheim CA, USA, May 2-6, 2010 p129

    [2]

    Waltereit P, Bronner W, Quay R, Dammann M, Kiefer R, Muller S, Musser M, Kuhn J, van Raay F, Seelmann M, Mikulla M, Ambacher O, van Rijs F, Rodle T, Riepe K 2009 Phys. Status Solidi A 206 1215

    [3]

    Scarpulla J, Eng D C, Olson S R,Wu C S 1999 37th Ieee International Reliability Physics Symposium Proceedings, San Diego CA, USA, March 23-25, 1999 p128

    [4]

    Cramer H C, Oliver J D, Porter R J 2006 CS MANTECH Conference, Vanco uver, British Columbia, Canada, April 24-27, 2006 p91

    [5]

    Sefa D, Del Alamo J A, Gajewski D A, Allen H 2009 CS MANTECH Conference, Tampa Florida, USA, May 18-21, 2009

    [6]

    Slater R D 2010 CS MANTECH Conference, Portland Oregon, USA, May 17-20, 2010

    [7]

    Berman A 1981 19th Annual Reliability Physics Proceedings, Orlando FL, USA, April 7-9, 1981 p204

    [8]

    Hu H S, Zhang M, Lin L J 2000 Acta Electron. Sinica 28 80 (in Chinese) [胡恒升, 张敏, 林立谨 2000 电子学报 28 80]

    [9]

    Lai S K 1983 J. Appl. Phys. 54 2540

    [10]

    Scott R S, Dumin N A, Hughes T W, Dumin D J, Moore B T 1995 33rd IEEE International Reliability Physics Symposium Proceedings Las Vegas NV, USA, April 4-6, 1995 p131

    [11]

    Scarpulla J, Ahlers E D, Eng D C, Leung D L, Olson S R, Chan-Shin W 1998 GaAs Reliability Workshop Proceedings, Atlanta GA, USA, November 1, 1998 p92

    [12]

    Huang Y, Niu L R, Lin L 2005 Reseach & Progress of SSE 25 315 (in Chinese) [黄云, 钮利荣, 林丽 2005 固体电子学研究与进展 25 315]

    [13]

    Ryuzaki D, Ishida T, Furusawa T 2003 J. Electrochem. Soc. 150 F203

    [14]

    Yeargan J R, Taylor H L 1968 J. Appl. Phys. 39 5600

    [15]

    Yeats B 1998 IEEE Trans. Electron Dev. 45 939

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出版历程
  • 收稿日期:  2011-12-23
  • 修回日期:  2012-02-24
  • 刊出日期:  2012-09-05

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