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分子束外延生长InGaN/AlN量子点的组分研究

胡懿彬 郝智彪 胡健楠 钮浪 汪莱 罗毅

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分子束外延生长InGaN/AlN量子点的组分研究

胡懿彬, 郝智彪, 胡健楠, 钮浪, 汪莱, 罗毅

Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi
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  • 报道了分子束外延生长的绿光波段InGaN/AlN量子点材料, 并综合考虑InGaN量子点的应变弛豫, 以及应力和量子限制斯塔克效应对量子点发光波长的影响, 提出了一种结合反射式高能电子衍射原位测量与光致荧光测量确定InGaN量子点组分的方法.
    In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.
    • 基金项目: 国家自然科学基金(批准号: 61176015, 61176059, 60723002, 60977022, 51002085)、国家重点基础研究发展计划 (批准号: 2011CB301902, 2011CB301903)和国家高技术研究发展计划 (批准号: 2011AA03A112, 2011AA03A106, 2011AA03A105)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176015, 61176059, 60723002, 60977022, 51002085), the National Basic Research Program of China (Grant Nos. 2011CB301902, 2011CB301903), and the National High Technology Research and Development Program of China (Grant Nos. 2011AA03A112, 2011AA03A106, 2011AA03A105).
    [1]

    Grandjean N, Damilano B, Massies J 2000 Proceedings of the International Workshop on Nitride Semiconductors Nagoya, Japan, November 30, 2000 pp397-402

    [2]

    Kraus A, Hammadi S, Hisek J, Buβ R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A 2011 Journal of Crystal Growth 323 72

    [3]

    Bayram C, Razeghi M 2009 Appl. Phys. A 96 403

    [4]

    Ding Z B, Wang K, Wang H, Chen T X, Yao S D, Wang Q, Zhang G Y 2007 Acta Phys. Sin. 56 2877 (in Chinese) [丁志博,王坤,王欢,陈田祥,姚淑德,王琦,张国义 2007 物理学报 56 2877]

    [5]

    Lü W B, Wang L, Wang J X, Hao Z B, Luo Y 2011 Chin. Phys. Lett. 28 128101

    [6]

    Bottcher T, Einfeldt S, Kirchner V, Figge S, Heinke H, Hommel D, Selke H, Ryder P L 1998 Appl. Phys. Lett. 703 3232

    [7]

    Kim H J, Na H, Kwon S Y, Seo H C, Kim H J, Shin Y, Lee K H, Kim D H, Oh H J, Yoon S, Sone C, Park Y, Yoon E 2004 J. Cryst. Grow. 269 95

    [8]

    Kawamura T, Maksym P A 2011 Journal of Philosophy, Science and Law 80 63602

    [9]

    Schuster M, Gervais P O, Jobst B, Hosler W, Averbeck R, Riechert H, Iberl A, Stomme R 1999 J. Phys. D: Appl. Phys 32 A56

    [10]

    Huang J S, Chen Z, Luo X D, Xu Z Y, Ge W K 2004 J. Cryst. Growth 260 13

    [11]

    Ramirez-Morales A, Martinez-Orozco J C, Rodriguez-Vargas I 2011 J. Appl. Phys. 110 103715

    [12]

    Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491

    [13]

    Yan Q, Rinke P, Scheffler M, van de Walle C G 2009 Appl. Phys. Lett. 95 121111

    [14]

    Niu L, Hao Z B, Hu J N, Hu Y B, Wang L, Luo Y 2011 Nanoscale Research Letters 6 611

    [15]

    Singh R, Doppalapudi D, Moustakas T D, Romano L T 1997 Appl. Phys. Lett. 70 1089

  • [1]

    Grandjean N, Damilano B, Massies J 2000 Proceedings of the International Workshop on Nitride Semiconductors Nagoya, Japan, November 30, 2000 pp397-402

    [2]

    Kraus A, Hammadi S, Hisek J, Buβ R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A 2011 Journal of Crystal Growth 323 72

    [3]

    Bayram C, Razeghi M 2009 Appl. Phys. A 96 403

    [4]

    Ding Z B, Wang K, Wang H, Chen T X, Yao S D, Wang Q, Zhang G Y 2007 Acta Phys. Sin. 56 2877 (in Chinese) [丁志博,王坤,王欢,陈田祥,姚淑德,王琦,张国义 2007 物理学报 56 2877]

    [5]

    Lü W B, Wang L, Wang J X, Hao Z B, Luo Y 2011 Chin. Phys. Lett. 28 128101

    [6]

    Bottcher T, Einfeldt S, Kirchner V, Figge S, Heinke H, Hommel D, Selke H, Ryder P L 1998 Appl. Phys. Lett. 703 3232

    [7]

    Kim H J, Na H, Kwon S Y, Seo H C, Kim H J, Shin Y, Lee K H, Kim D H, Oh H J, Yoon S, Sone C, Park Y, Yoon E 2004 J. Cryst. Grow. 269 95

    [8]

    Kawamura T, Maksym P A 2011 Journal of Philosophy, Science and Law 80 63602

    [9]

    Schuster M, Gervais P O, Jobst B, Hosler W, Averbeck R, Riechert H, Iberl A, Stomme R 1999 J. Phys. D: Appl. Phys 32 A56

    [10]

    Huang J S, Chen Z, Luo X D, Xu Z Y, Ge W K 2004 J. Cryst. Growth 260 13

    [11]

    Ramirez-Morales A, Martinez-Orozco J C, Rodriguez-Vargas I 2011 J. Appl. Phys. 110 103715

    [12]

    Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491

    [13]

    Yan Q, Rinke P, Scheffler M, van de Walle C G 2009 Appl. Phys. Lett. 95 121111

    [14]

    Niu L, Hao Z B, Hu J N, Hu Y B, Wang L, Luo Y 2011 Nanoscale Research Letters 6 611

    [15]

    Singh R, Doppalapudi D, Moustakas T D, Romano L T 1997 Appl. Phys. Lett. 70 1089

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  • 文章访问数:  6280
  • PDF下载量:  646
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-04-19
  • 修回日期:  2012-06-28
  • 刊出日期:  2012-12-05

分子束外延生长InGaN/AlN量子点的组分研究

  • 1. 清华信息科学与技术国家实验室(筹), 清华大学电子工程系, 北京 100084
    基金项目: 国家自然科学基金(批准号: 61176015, 61176059, 60723002, 60977022, 51002085)、国家重点基础研究发展计划 (批准号: 2011CB301902, 2011CB301903)和国家高技术研究发展计划 (批准号: 2011AA03A112, 2011AA03A106, 2011AA03A105)资助的课题.

摘要: 报道了分子束外延生长的绿光波段InGaN/AlN量子点材料, 并综合考虑InGaN量子点的应变弛豫, 以及应力和量子限制斯塔克效应对量子点发光波长的影响, 提出了一种结合反射式高能电子衍射原位测量与光致荧光测量确定InGaN量子点组分的方法.

English Abstract

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