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ZnO:Sb薄膜的光致发光及拉曼特性研究

邓泉 马勇 杨晓红 叶利娟 张学忠 张起 付宏伟

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ZnO:Sb薄膜的光致发光及拉曼特性研究

邓泉, 马勇, 杨晓红, 叶利娟, 张学忠, 张起, 付宏伟

Photoluminescence and Raman properties of Sb-doped ZnO thin film

Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei
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  • 利用射频磁控溅射法(MS-RF)在玻璃基片上制备了不同掺杂浓度的ZnO:Sb薄膜. 借助X射线衍射仪(XRD)、透射光谱、光致发光谱(PL)和拉曼散射光谱(Raman)等手段研究了Sb掺杂浓度对ZnO薄膜的微结构、光致发光和拉曼特性的影响. 结果表明: 所有样品均呈现ZnO六角纤锌矿结构且具有高度c轴择优取向; 在Sb 掺杂ZnO薄膜的拉曼光谱中观察到位于532 cm-1的振动模式, 结合XRD分析认为此峰归因于Sb替代Zn位且与O 成键的局域振动模式(LVMSb-O); 光致发光谱测试发现, 仅在ZnO:Sb薄膜中观察到位于3.11 eV附近的紫光发射峰, 结合拉曼光谱分析认为此峰与SbZn-O复合体缺陷相关.
    Sb-doped ZnO thin films with various impurity content values are deposited on glass substrates by radio frequency magnetron sputtering medthods. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation; The vibrational mode at 532 cm-1 induced by Sb dopant can be observed in the Raman spectrum of the Sb-doped ZnO thin film, which can be attributed to local vibrational mode (LVMSb-O) that are formed by substituting Sb for Zn substitution and bonding O in ZnO lattice. The strong violet emission peak located at 3.11 eV is observed only in Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak is relation to SbZn-O complex defect in ZnO:Sb film.
    • 基金项目: 重庆师范大学博士基金(批准号: 10XLB022)资助的课题.
    • Funds: Project supported by the Doctoral Foundiation of Chongqing Normal University (Grant No. 10XLB022).
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    Lupan O, Chow L, Ono L k, Cuenya B R, Chai G Y, Khallaf H, Park S, Schulte A 2010 J. Phys. Chem. C 114 12401

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    Zhang Z C, Huang B B, Yu Y Q, Cui D L 2001 Mater. Sci. Eng. B 86 109

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    Jeong T S, Han M S, Youn C J, Park Y S 2004 J. Appl. Phys. 96 175

    [39]

    Li W J, Kong C Y, Ruan H B Qin G P, Huang G J, Yang T Y, Liang W W, Zhao Y H, Meng X D, Yu P, Cui Y T, Fang L 2012 Solid. State. Com. 152147

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  • [1]

    Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501

    [2]

    Liu C Y, Zhang B P, Lu Z W, Binh N T, Wakatsuki K, Segawa Y, Mu R 2009 J. Mater. Sci. Mater. Electron 20 197

    [3]

    Zhou H, Wissinger M, Fallert J, Hauschild R, Stelzl F, Klingshirn C, Kalt H 2007 Appl. Phys. Lett. 91 181112

    [4]

    Limpijumnong S, Zhang S B, Wei S H, Park C H 2004 Phys. Rev. Lett. 92 155504

    [5]

    Pan X H, Ye Z Z, Li J S, Gu X Q, Zeng Y J, He H P, Zhu L P, Che Y 2007 Appl. Surf. Sci. 253 5067

    [6]

    Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu L J, Beyermann W P 2005 Appl. Phys. Lett. 87 152101

    [7]

    Kim D H, Cho N G, Kim K S, Han S H, Kim H G 2009 J. Electroceram 22 82

    [8]

    Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci. 255 6881

    [9]

    Zhao S Q, Zhou Y L, Zhao K, Liu Z, Han P, Wang S F, Xiang W F, Chen Z H, L H B, Cheng B L, Yang G Z 2006 Phys. B 373 154

    [10]

    Chen H X, Ding J J, Ma S Y 2011 Super. Micro. 49 176

    [11]

    Wei H Y, Wu Y S, Wu L L, Hu C X 2005 Mater. Lett. 59 271

    [12]

    Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta Phys. Sin. 59 4831 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 物理学报 59 4831]

    [13]

    Wang X B, Song C, Geng K W, Zeng K W, Zeng F, Pan F 2006 J. Phys. D: Appl. Phys. 39 4992

    [14]

    Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu X, Chang R P H 2001 J. Cryst. Growth 226 123

    [15]

    Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 831974

    [16]

    Samanta K, Bhattacharya P, Katiyar R S 2010 J. Appl. Phys. 108 113501

    [17]

    Viennois R, Record M C, Izard V, Tedenac J C 2007 J. Alloy. Compd. Lett. 440 L22

    [18]

    Friedrich F, Sieber I, Klimm C, Klaus M, Genzel C, Nickel N H 2011 Appl. Phys. Lett. 98 131902

    [19]

    Koudelka L, Šubčík J, Mošner P, Montagne L, Delevoye L 2007 J. Non-Cryst. Solids 353 1828

    [20]

    Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681

    [21]

    Wahl U, Correia J G, Decoster S, Mendonca T 2009 Physics. B 404 4803

    [22]

    Wang B X, Song C, Geng K W, Zeng F, Pan F 2007 Appl. Surf. Sci. 253 6905

    [23]

    Shan F K, Kim B I, Liu G X, Liu Z F, Sohn J Y, Lee W J, Shin B C, Yu Y S J. 2004 J. Appl. Phys. 95 4772

    [24]

    Behera D, Acharya B S 2008 J. Lumin. 128 1577

    [25]

    Sun C W, Liu Z W, Qin F W, Zhang Q Y, Liu K, Wu S F 2006 Acta Phys. Sin. 55 1390 (in Chinese) [孙成伟, 刘志文, 秦福文, 刘琨, 吴世法 2006 物理学报 55 1390]

    [26]

    Zhang D P, Fan P, Cai X M, Huang J J, Ru L L, Zheng Z H, Liang G X, Huang Y K 2009 Appl. Phys. A 97 437

    [27]

    Jin B J, Im S, Lee S Y, 2000 Thin. Solid. Films. 366 107

    [28]

    Srivastava A K, Deepa M, Bahadur N, Goyat M S 2009 Mater. Chem. Phys. 114 194

    [29]

    Saliha I, Yasemin C, Mujdutcaglar C, Yakuphanoglu F, Cui J B 2008 Physic. E 41 96

    [30]

    Cao B Q, Cai W P, Zeng H B 2006 Appl. Phys. Lett. 88 161101

    [31]

    Xu P S, Sun Y M, Shi C S 2001 Sci. China. Ser. A 31 358 (in Chinese) [徐彭寿, 孙玉明, 施朝淑 2001 中国科学 A辑 31 358]

    [32]

    Fan X M, Lian J S, Zhao L, Liu Y H 2005 Appl. Surf. Sci. 252 420

    [33]

    Behera D, Acharya B S 2008 J. Lumin. 128 1577

    [34]

    Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnada B E 1996 J. Appl. Phys. 79 7983

    [35]

    Lupan O, Chow L, Ono L k, Cuenya B R, Chai G Y, Khallaf H, Park S, Schulte A 2010 J. Phys. Chem. C 114 12401

    [36]

    Arguello C A, Rousseau D L, Porto S P S 1969 Phys. Rev. 181 1351

    [37]

    Zhang Z C, Huang B B, Yu Y Q, Cui D L 2001 Mater. Sci. Eng. B 86 109

    [38]

    Jeong T S, Han M S, Youn C J, Park Y S 2004 J. Appl. Phys. 96 175

    [39]

    Li W J, Kong C Y, Ruan H B Qin G P, Huang G J, Yang T Y, Liang W W, Zhao Y H, Meng X D, Yu P, Cui Y T, Fang L 2012 Solid. State. Com. 152147

    [40]

    Marí B, Manjón F L, Mollar M, Cembrero J, Gómez R 2006 Appl. Surf. Sci. 252 2826

    [41]

    Decremps F, Porres P J, Saitta M A, Chervin J C, Polian A 2002 Phys. Rev. B 65 092101

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  • 收稿日期:  2012-05-06
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  • 刊出日期:  2012-12-05

ZnO:Sb薄膜的光致发光及拉曼特性研究

  • 1. 重庆市光电功能材料重点实验室, 重庆师范大学光学工程重点实验室, 重庆 400047
    基金项目: 重庆师范大学博士基金(批准号: 10XLB022)资助的课题.

摘要: 利用射频磁控溅射法(MS-RF)在玻璃基片上制备了不同掺杂浓度的ZnO:Sb薄膜. 借助X射线衍射仪(XRD)、透射光谱、光致发光谱(PL)和拉曼散射光谱(Raman)等手段研究了Sb掺杂浓度对ZnO薄膜的微结构、光致发光和拉曼特性的影响. 结果表明: 所有样品均呈现ZnO六角纤锌矿结构且具有高度c轴择优取向; 在Sb 掺杂ZnO薄膜的拉曼光谱中观察到位于532 cm-1的振动模式, 结合XRD分析认为此峰归因于Sb替代Zn位且与O 成键的局域振动模式(LVMSb-O); 光致发光谱测试发现, 仅在ZnO:Sb薄膜中观察到位于3.11 eV附近的紫光发射峰, 结合拉曼光谱分析认为此峰与SbZn-O复合体缺陷相关.

English Abstract

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