单电子晶体管电流解析模型及数值分析

苏丽娜; 顾晓峰; 秦华; 闫大为

doi:10.7498/aps.62.077301

摘要

本文首先建立单电子晶体管的电流解析模型, 然后将蒙特卡罗法与主方程法结合进行数值分析, 研究了栅极偏压、漏极偏压、温度与隧道结电阻等参数对器件特性的影响. 结果表明: 对于对称结, 库仑台阶随栅极偏压增大而漂移; 漏极电压增大, 库仑振荡振幅增强, 库仑阻塞则衰减; 温度升高将导致库仑台阶和库仑振荡现象消失. 对于非对称结, 源漏隧道结电阻比率增大, 库仑阻塞现象越明显.

关键词:

The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases.

Keywords:

作者及机构信息

1.
轻工过程先进控制教育部重点实验室, 江南大学电子工程系, 无锡 214122;

2.
纳米器件与应用重点实验室, 中国科学院苏州纳米技术与纳米仿生研究所, 苏州 215123

基金项目: 国家自然科学基金 (批准号: 11074280)、江苏高校优势学科建设工程项目、中央高校基本科研业务费专项资金 (批准号: JUSRP20914, JUSRP51323B, JUDCF12031, JUDCF12032)和江苏省自然科学基金(批准号: BK2012110)资助的课题.

Authors and contacts

1.
Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;

2.
Key Laboratory of Nanodevices, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11074280), the PAPD of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for Central Universities (Grant Nos. JUSRP20914, JUSRP51323B, JUDCF12031, JUDCF12032), and the Natural Science Foundation of Jiangsu (Grant No. BK2012110).

参考文献

[1]	Likharev K K 1999 P. IEEE 87 606
[2]	Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302 (in Chinese) [隋兵才, 方粮, 张超 2011 物理学报 60 077302]
[3]	Lui Y X, Wang Y C, Du S Y 2004 Acta Phys. Sin. 53 2734 (in Chinese) [刘彦欣, 王永昌, 杜少毅 2004 物理学报 53 2734]
[4]	Wu F, Wang T H 2002 Acta Phys. Sin. 51 2829 (in Chinese) [吴凡, 王太宏 2002 物理学报 51 2829]
[5]	Wang W, Liu M, Hsu A 2006 J. Comput. Sci. Technol. 21 871
[6]	Ali D, Ahmed H 1994 Appl. Phys. Lett. 64 2119
[7]	Wasshuber C 2001 Computational Single Electronics (New York: Springer) p9
[8]	Likharev K K 1988 IBM J. Res. Dev. 32 144
[9]	Wasshuber C, Kosina H, Selberherr S 1997 IEEE T. Comput. Aid D 16 937
[10]	Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y, Kim E K 1998 Appl. Phys. Lett. 73 3129
[11]	Zhuang L, Guo L. Chou S Y 1998 Appl. Phys. Lett. 72 1205
[12]	Tilke A, Pescini L, Blick R H, Lorenz H, Kotthaus J P 2000 Prog. Mater. Sci. 71 357

施引文献

[1]	Likharev K K 1999 P. IEEE 87 606
[2]	Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302 (in Chinese) [隋兵才, 方粮, 张超 2011 物理学报 60 077302]
[3]	Lui Y X, Wang Y C, Du S Y 2004 Acta Phys. Sin. 53 2734 (in Chinese) [刘彦欣, 王永昌, 杜少毅 2004 物理学报 53 2734]
[4]	Wu F, Wang T H 2002 Acta Phys. Sin. 51 2829 (in Chinese) [吴凡, 王太宏 2002 物理学报 51 2829]
[5]	Wang W, Liu M, Hsu A 2006 J. Comput. Sci. Technol. 21 871
[6]	Ali D, Ahmed H 1994 Appl. Phys. Lett. 64 2119
[7]	Wasshuber C 2001 Computational Single Electronics (New York: Springer) p9
[8]	Likharev K K 1988 IBM J. Res. Dev. 32 144
[9]	Wasshuber C, Kosina H, Selberherr S 1997 IEEE T. Comput. Aid D 16 937
[10]	Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y, Kim E K 1998 Appl. Phys. Lett. 73 3129
[11]	Zhuang L, Guo L. Chou S Y 1998 Appl. Phys. Lett. 72 1205
[12]	Tilke A, Pescini L, Blick R H, Lorenz H, Kotthaus J P 2000 Prog. Mater. Sci. 71 357

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