搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究

李帅帅 梁朝旭 王雪霞 李延辉 宋淑梅 辛艳青 杨田林

引用本文:
Citation:

高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究

李帅帅, 梁朝旭, 王雪霞, 李延辉, 宋淑梅, 辛艳青, 杨田林

The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors

Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin
PDF
导出引用
  • 由于铟镓锌氧化物(IGZO) 薄膜具有高迁移率和高透过率的特点, 它作为有源层被广泛的应用于薄膜晶体管(TFT). 本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极, 用简单低成本的掩膜法控制沟道的尺寸, 制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管 (IGZO-TFT). 利用X 射线衍射仪(XRD) 和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱, 研究了IGZO薄膜的结构和光学特性. 通过测试IGZO-TFT的输出特性和转移特性曲线, 讨论了IGZO有源层厚度对IGZO-TFT特性的影响. 制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V-1·s-1, 开关比高于107.
    Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet-visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V-1·s-1, and the on/off ratio is higher than 107.
    • 基金项目: 山东省自然科学基金(批准号: ZR2009AM020)和山东大学自主创新基金 (批准号: 2011ZRXT002, 2011ZRYQ010) 资助的课题.
    • Funds: Project supported by the Natural Science Foundation of Shandong Province, China (Grant No. ZR2009AM020), and the Independent Innovation Foundation of Shandong University, China (Grant Nos. 2011ZRXT002, 2011ZRYQ010).
    [1]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 物理学报 58 8556]

    [2]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才, 徐征, 赵谡玲, 张福俊, 姜薇薇, 黄金昭, 宋丹丹, 朱海娜, 黄金英, 徐叙瑢 2008 物理学报 57 5911]

    [3]

    Xu T Y, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yan Z J 2010 Acta Phys. Sin. 59 5018 (in Chinese) [徐天宇, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 物理学报 59 5018]

    [4]

    Zhang L, Li J, Zhang X W, Jiang X Y, Zhang Z L 2009 Appl. Phys. Lett. 95 072112

    [5]

    Dehuff N L, Kettenring E S, Hong D, Chiang H Q, Wager J F 2005 J. Appl. Phys. 97 064505

    [6]

    Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T, Hosono H 2006 Appl. Phys. Lett. 89 112123

    [7]

    Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503

    [8]

    Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305

    [9]

    Wang X, Cai X K, Yan Z J Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 物理学报 60 037305]

    [10]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [11]

    Barquinha P, Pimentel A, Marques A, Pereira L, Martins R, Fortunato E 2006 Journal of Non-Crystalline Solids 352 1749

    [12]

    Wang Y, Sun X W, Goh G K L, Demir H V, Yu H Y 2011 IEEE Trans. Electron Device 58 480

    [13]

    Li C S, Li Y N, Wu Y L, Ong B S, Loutfy R O 2009 J. Mater. Chem. 19 1626

    [14]

    Martin S, Chiang C S, Nahm J Y, Li T, Kanicki J, Ugai Y 2001 Jpn. J. Appl. Phys. 40 530

    [15]

    Greve D W 1998 Field Effect Devices and Applications: Devices for Portable Low Power, and Imaging Systems (1st Edn.) (Englewood Cliffs NJ: Prentice-Hall ) p287288

    [16]

    Chiang H Q 2007 Ph. D. Dissertation (Corvallis: Oregon State University)

  • [1]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红 2009 物理学报 58 8556]

    [2]

    Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Huang J Z, Song D D, Zhu H N, Huang J Y, Xu S R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才, 徐征, 赵谡玲, 张福俊, 姜薇薇, 黄金昭, 宋丹丹, 朱海娜, 黄金英, 徐叙瑢 2008 物理学报 57 5911]

    [3]

    Xu T Y, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yan Z J 2010 Acta Phys. Sin. 59 5018 (in Chinese) [徐天宇, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 物理学报 59 5018]

    [4]

    Zhang L, Li J, Zhang X W, Jiang X Y, Zhang Z L 2009 Appl. Phys. Lett. 95 072112

    [5]

    Dehuff N L, Kettenring E S, Hong D, Chiang H Q, Wager J F 2005 J. Appl. Phys. 97 064505

    [6]

    Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T, Hosono H 2006 Appl. Phys. Lett. 89 112123

    [7]

    Chiang H Q, Wager J F, Hoffman R L, Jeong J, Keszler D A 2005 Appl. Phys. Lett. 86 013503

    [8]

    Kamiya T, Nomura K, Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305

    [9]

    Wang X, Cai X K, Yan Z J Zhu X M, Qiu D J, Wu H Z 2011 Acta Phys. Sin. 60 037305 (in Chinese) [王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢 2011 物理学报 60 037305]

    [10]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [11]

    Barquinha P, Pimentel A, Marques A, Pereira L, Martins R, Fortunato E 2006 Journal of Non-Crystalline Solids 352 1749

    [12]

    Wang Y, Sun X W, Goh G K L, Demir H V, Yu H Y 2011 IEEE Trans. Electron Device 58 480

    [13]

    Li C S, Li Y N, Wu Y L, Ong B S, Loutfy R O 2009 J. Mater. Chem. 19 1626

    [14]

    Martin S, Chiang C S, Nahm J Y, Li T, Kanicki J, Ugai Y 2001 Jpn. J. Appl. Phys. 40 530

    [15]

    Greve D W 1998 Field Effect Devices and Applications: Devices for Portable Low Power, and Imaging Systems (1st Edn.) (Englewood Cliffs NJ: Prentice-Hall ) p287288

    [16]

    Chiang H Q 2007 Ph. D. Dissertation (Corvallis: Oregon State University)

  • [1] 王俊, 蔡飞燕, 张汝钧, 李永川, 周伟, 李飞, 邓科, 郑海荣. 基于压电声子晶体板波声场的微粒操控. 物理学报, 2024, 0(0): 0-0. doi: 10.7498/aps.73.20231886
    [2] 李桑丫, 张艾霖, 徐欣, 吕涛, 王世康, 罗箐. 基于强流离子源的离子束溅射镀膜设备均匀性优化. 物理学报, 2024, 73(5): 058101. doi: 10.7498/aps.73.20231491
    [3] 蒋东镔, 张颖, 姜大朋, 朱斌, 李纲, 孙立, 黄征, 卢峰, 谢娜, 周凯南, 粟敬钦. Nd, Gd:SrF2晶体材料在宽带放大中的光谱增益特性. 物理学报, 2023, 72(22): 224208. doi: 10.7498/aps.72.20230972
    [4] 陈舒越, 蒋闯, 柯少林, 王兵, 陆培祥. 基于Aharonov-Bohm笼的非厄米趋肤效应抑制现象. 物理学报, 2022, 71(17): 174201. doi: 10.7498/aps.71.20220978
    [5] 戚炜恒, 王震, 李翔飞, 禹日成, 王焕华. 外延BaMoO3, BaMoO4薄膜的生长行为. 物理学报, 2022, 71(17): 178103. doi: 10.7498/aps.71.20220736
    [6] 张亚菊, 谢忠帅, 郑海务, 袁国亮. Au-BiFeO3纳米复合薄膜的电学和光伏性能优化. 物理学报, 2020, 69(12): 127709. doi: 10.7498/aps.69.20200309
    [7] 王庆玲, 迪拉热·哈力木拉提, 沈玉玲, 艾尔肯·斯地克. 多面体共替代对Sr2(Al1–xMgx)(Al1–xSi1+x)O7: Eu2+晶体结构和发光颜色的影响. 物理学报, 2019, 68(10): 100701. doi: 10.7498/aps.68.20182272
    [8] 胡伟达, 李庆, 陈效双, 陆卫. 具有变革性特征的红外光电探测器. 物理学报, 2019, 68(12): 120701. doi: 10.7498/aps.68.20190281
    [9] 李酽, 张琳彬, 李娇, 连晓雪, 朱俊武. 电场条件下氧化锌结晶特性及极化产物的拉曼光谱分析. 物理学报, 2019, 68(7): 070701. doi: 10.7498/aps.68.20181961
计量
  • 文章访问数:  6125
  • PDF下载量:  1235
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-11-01
  • 修回日期:  2012-11-29
  • 刊出日期:  2013-04-05

/

返回文章
返回