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基于AlGaN/GaN共振隧穿二极管的退化现象的研究

陈浩然 杨林安 朱樟明 林志宇 张进成

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基于AlGaN/GaN共振隧穿二极管的退化现象的研究

陈浩然, 杨林安, 朱樟明, 林志宇, 张进成

Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode

Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng
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  • 文章研究了GaN基共振隧穿二极管 (RTD) 的退化现象. 通过向AlGaN/GaN/AlGaN量子阱中引入三个实测的深能级陷阱中心并自洽求解薛定谔方程和泊松方程, 计算并且讨论了陷阱中心对GaN基RTD的影响. 结果表明, GaN基RTD的退化现象是由陷阱中心的缺陷密度和激活能的共同作用引起. 由于陷阱中心的电离率和激活能的指数呈正相关关系, 因此具有高激活能的陷阱中心俘获更多电子, 对负微分电阻 (NDR) 特性的退化起主导作用.
    In this paper we study theoretically the degradation phenomenon of GaN-based resonant tunneling diode (RTD). The effects of trapping centers on GaN-based RTD are calculated and studied by self-consistently solving the Poisson-Schrödinger aligns when three experimentally obtained deep-level trapping centers are introduced into the AlGaN/GaN/AlGaN quantum well. Results show that the degradations of negative differential resistance (NDR) characteristic in GaN-based RTDs are actually caused by the combined action of the activation energy and the defect density. The deep-level trapping center with high activation energy plays a dominating role in the degradation of NDR characteristics because the probability of ionization is exponentially proportional to the activation energy.
    • 基金项目: 国家自然科学基金 (批准号: 61076079) 和国家科技重大专项 (批准号: 2013ZX02308-002) 资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076079), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02308-002).
    [1]

    Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117305 (in Chinese) [张金凤, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]

    [2]

    Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117304 (in Chinese) [王平亚, 张金凤, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]

    [3]

    Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta phys. Sin. 58 5706 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]

    [4]

    Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204

    [5]

    Lin Z Y, Zhang J C, Xu S R, L L, Liu Z Y, Ma J C, Xue X Y, Xue J S, Hao Y 2011 Acta phys. Sin. 61 186103 (in Chinese) [林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅, 郝跃 2011 物理学报 61 186103]

    [6]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 092104

    [7]

    Vashaei Z, Bayram C, Razeghi M 2010 J. Appl. Phys. 107 083505

    [8]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 181109

    [9]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 96 042103

    [10]

    Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C, De Jaeger J C 2011 Appl. Phys. Lett. 99 182109

    [11]

    Ambacher O, Cimalla V 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (New York: Springer Science+Business Media) p35

    [12]

    Malbert N, Labat N, Curutchet A, Sury C, Hoel V, de Jaeger J C, Defrance N, Douvry Y, Dua C, Oualli M, Bru-Chevallier C, Bluet J M, Chikhaoui W 2009 Microelectron Reliab. 49 1216

    [13]

    Fang Z Q, Look D C 2005 Appl. Phys. Lett. 87 182115

    [14]

    Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F 2000 J. Appl. Phys. 87 334

    [15]

    Sacconi F, Carlo A D I, Lugli P 2002 Phys. Status Solidi A 190 295

    [16]

    Hermann M, Monroy E, Helman A, Baur B, Albrecht M, Daudin B, Ambacher O, Stutzmann M, Eickhoff 2004 Phys. Status Solidi C 1 2210

  • [1]

    Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117305 (in Chinese) [张金凤, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]

    [2]

    Wang P Y, Zhang J F, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta phys. Sin. 60 117304 (in Chinese) [王平亚, 张金凤, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117304]

    [3]

    Xu S R, Zhang J C, Li Z M, Zhou X W, Xu Z H, Zhao G C, Zhu Q W, Zhang J F, Mao W, Hao Y 2009 Acta phys. Sin. 58 5706 (in Chinese) [许晟瑞, 张进城, 李志明, 周小伟, 许志豪, 赵广才, 朱庆伟, 张金凤, 毛维, 郝跃 2009 物理学报 58 5705]

    [4]

    Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C, Wang H 2010 Chin. Phys. B 19 107204

    [5]

    Lin Z Y, Zhang J C, Xu S R, L L, Liu Z Y, Ma J C, Xue X Y, Xue J S, Hao Y 2011 Acta phys. Sin. 61 186103 (in Chinese) [林志宇, 张进成, 许晟瑞, 吕玲, 刘子扬, 马俊彩, 薛晓咏, 薛军帅, 郝跃 2011 物理学报 61 186103]

    [6]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 092104

    [7]

    Vashaei Z, Bayram C, Razeghi M 2010 J. Appl. Phys. 107 083505

    [8]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 97 181109

    [9]

    Bayram C, Vashaei Z, Razeghi M 2010 Appl. Phys. Lett. 96 042103

    [10]

    Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C, De Jaeger J C 2011 Appl. Phys. Lett. 99 182109

    [11]

    Ambacher O, Cimalla V 2008 Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications (New York: Springer Science+Business Media) p35

    [12]

    Malbert N, Labat N, Curutchet A, Sury C, Hoel V, de Jaeger J C, Defrance N, Douvry Y, Dua C, Oualli M, Bru-Chevallier C, Bluet J M, Chikhaoui W 2009 Microelectron Reliab. 49 1216

    [13]

    Fang Z Q, Look D C 2005 Appl. Phys. Lett. 87 182115

    [14]

    Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F 2000 J. Appl. Phys. 87 334

    [15]

    Sacconi F, Carlo A D I, Lugli P 2002 Phys. Status Solidi A 190 295

    [16]

    Hermann M, Monroy E, Helman A, Baur B, Albrecht M, Daudin B, Ambacher O, Stutzmann M, Eickhoff 2004 Phys. Status Solidi C 1 2210

计量
  • 文章访问数:  2090
  • PDF下载量:  597
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-07-07
  • 修回日期:  2013-07-22
  • 刊出日期:  2013-11-05

基于AlGaN/GaN共振隧穿二极管的退化现象的研究

  • 1. 西安电子科技大学微电子学院, 宽禁带半导体材料与器件教育部重点实验室, 西安 710071
    基金项目: 

    国家自然科学基金 (批准号: 61076079) 和国家科技重大专项 (批准号: 2013ZX02308-002) 资助的课题.

摘要: 文章研究了GaN基共振隧穿二极管 (RTD) 的退化现象. 通过向AlGaN/GaN/AlGaN量子阱中引入三个实测的深能级陷阱中心并自洽求解薛定谔方程和泊松方程, 计算并且讨论了陷阱中心对GaN基RTD的影响. 结果表明, GaN基RTD的退化现象是由陷阱中心的缺陷密度和激活能的共同作用引起. 由于陷阱中心的电离率和激活能的指数呈正相关关系, 因此具有高激活能的陷阱中心俘获更多电子, 对负微分电阻 (NDR) 特性的退化起主导作用.

English Abstract

参考文献 (16)

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