柔性有机非易失性场效应晶体管存储器的研究进展

柴玉华; 郭玉秀; 卞伟; 李雯; 杨涛; 仪明东; 范曲立; 解令海; 黄维

doi:10.7498/aps.63.027302

摘要

柔性有机非易失性场效应晶体管存储器具有柔性、质轻、成本低、可低温及大面积加工等优点，在射频识别标签、柔性存储、柔性集成电路和大面积柔性显示等领域展现出巨大的应用前景. 本文在介绍柔性有机非易失性场效应晶体管存储器的衬底材料、器件结构和性能参数的基础上，总结了柔性有机非易失性场效应晶体管存储器的分类，并讨论了机械应力和不同温度对柔性有机非易失性场效应晶体管存储器性能参数的影响，最后展望了柔性有机非易失性场效应晶体管存储器的应用前景以及所面临的挑战.

关键词:

柔性 /
晶体管 /
非易失性 /
存储

Abstract

Flexible organic non-volatile memory field-effect transistors (ONVMFETs) are promising candidates in the field of flexible organic electronic devices, which can be used in flexible radio frequency tags, memories, integrated circuits and large-area displays, because of their remarkable advantages such as flexibility, lightweight, low cost and large-area organic electronics. On the basis of the introduction of the development of flexible ONVMFETs in terms of substrates, structures and characteristics, the classification of flexible ONVMFETs is summarized. Meanwhile, we discuss the effects of mechanical stress and temperature on the performance of flexible ONVMFET. Finally, some prospects as well as the challenges are pointed out.

Keywords:

flexible /
transistors /
non-volatile /
memory

作者及机构信息

1.
东北农业大学电气与信息学院, 哈尔滨 150030;

2.
南京邮电大学信息材料与纳米技术研究院, 南京 210023;

3.
南京工业大学先进材料研究院, 南京 211816

基金项目: 国家重点基础研究发展计划（批准号：2012CB723402）、国家自然科学基金（批准号：61204095，61136003，21144004）、中国博士后科学基金（批准号：20070410883）、教育部博士点基金（批准号：20113223120003）、江苏省自然科学基金（批准号：BK2012431）、黑龙江省博士后基金（批准号：BH-Z07233）、黑龙江省自然科学基金重点项目（批准号：ZD201303）、江苏省高校自然科学基础研究面上项目（批准号：11KJB510017）和南京邮电大学人才科研启动基金（批准号：NY211022）资助的课题.

Authors and contacts

1.
School of Electrical and Information, Northeast Agricultural University, Haerbin 150030, China;

2.
Institute of Advanced Materials, Nanjing University of Posts and Telecommunacations, Nanjing 210023, China;

3.
Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 60876010, 61136003, 51173081, 21274064), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012431), the Natural Science Foundation of Heilongjiang Province, China (Grant No. ZD201303), the Heilongjiang Planned Projects for Postdoctoral Research Funds, China (Grant No. BH-Z07233), the Natural Science Foundation of Jiangsu Province, China (Grant No. ZD201303), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Staring Foundation of Nanjing University of Posts and Telecommunications, China (Grants No. NY211022).

参考文献

[1]	Dong J, Chai Y H, Zhao Y Z, Shi W W, Guo Y X, Yi M D, Xie L H, Huang W 2013 Acta Phys. Sin. 62 047301 (in Chinese) [董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维 2013 物理学报 62 047301]
[2]	Martins R, Ferreira I, Barquinha P, Correia N, Gonçalves G, Ferreira I, Dias C, Fortunato E 2011 Proc. of SPIE 7603 760314
[3]	He X D, Liao X M, Jiang S B, Song Z X 2011 Chem. Inter. 3 36 (in Chinese) [何晓东, 廖学明, 姜胜斌, 宋志祥 2011 化工中间体 3 36]
[4]	Song H C, Lu J 2003 Synth. Tech. Appl. 18 17(in Chinese) [宋厚春, 陆军 2003 合成技术及应用 18 17]
[5]	Liu N Q, Gu W, Qiao Q, Tian Y G 2004 J. Univ. Tech. (Nat. Sci. Ed.) 25 7 (in Chinese) [刘乃青, 顾巍, 乔迁, 田一光 2004 长春工业大学学报(自然科学版) 25 7]
[6]	Cui Y L, Zhang Z H, Jiang L, Ou X M 2005 Plastics Sci. Technol. 3 50 (in Chinese) [崔永丽, 张仲华, 江利, 欧雪梅 2005 塑料科技 3 50]
[7]	Guo Y L, Yu Gui, Liu Y Q 2010 Adv. Mater. 22 4427
[8]	Huang W, Mi B X, Gao Z Q 2011 Organic Electronics (Beijing: Science Press) p175 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第175页]
[9]	Zaumseil J, Sirringhaus H 2007 Chem. Rev. 107 1296
[10]	Richards T J, Sirringhaus H 2007 J. Appl. Phys. 102 094510
[11]	Chang C C, Pei Z, Chan Y J 2008 Appl. Phys. Lett. 93 143302
[12]	Lee K H, Lee G, Lee K, Oh M S, Im S, Yoon S M 2009 Adv. Mater. 21 4287
[13]	Zhou Y, Han S T, Xu Z X, Roy V A L 2012 Nanotechnology 23 344014
[14]	Baeg K J, Khim D, Kim J, Yang B D, Kang M, Jung S W, You I K, Kim D Y, Noh Y Y 2012 Adv. Funct. Mater. 22 2915
[15]	Gupta R K, Ying G, Srinivasan M P, Lee P S 2012 J. Phys. Chem. B 116 9784
[16]	Ortiz R P, Facchetti A, Marks T J 2010 Chem. Rev. 110 205
[17]	Roberts M E, Queralto N, Mannsfeld S C B, Reinecke B N, Knoll W, Bao Z N 2009 Chem. Mater. 21 2292
[18]	Wang W, Ma D G 2010 Chin. Phys. Lett. 27 018503
[19]	Leong W L, Lee P S, Mhaisalkar S G, Chen T P, Dodabalapur A 2007 Appl. Phys. Lett. 90 042906
[20]	Chang M F, Lee P T, McAlister S P, Chin A L 2008 Appl. Phys. Lett. 93 233302
[21]	Han K S, Park Y, Han G, Lee B H, Lee K H, Son D H, Im S, Sung M M 2012 J. Mater. Chem. 22 19007
[22]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516
[23]	Kaltenbrunner M, Stadler P, Schwödiauer R, Hassel A W, Sariciftci N S, Bauer S 2011 Adv. Mater. 23 4892
[24]	Gupta R K, Kusuma D Y, Lee P, Srinivasan M P 2011 Acs. Appl. Mater. Inter. 3 4619
[25]	Baeg K J, Noh Y Y, Sirringhaus H, Kim D Y 2010 Adv. Funct. Mater. 20 224
[26]	Kim S J, Lee J S 2010 Nano Lett. 10 2884
[27]	Khan H U, Roberts M E, Knoll W, Bao Z N 2011 Chem. Mater. 23 1946
[28]	Kim S J, Song J M, Lee J S 2011 J. Mater. Chem. 21 14516
[29]	Yu X G, Yu J S, Huang W, Zeng H J 2012 Chin. Phys. B 21 117307
[30]	Zhang H, Mi B X, Li X, Gao Z Q, Zhao L, Huang W 2013 Chin. Phys. Lett. 30 028501
[31]	Tian H J, Cheng X M, Zhao G, Liang X Y, Du B Q, Wu F 2012 Chin. Phys. Lett. 29 098503
[32]	Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306
[33]	Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203
[34]	Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972
[35]	Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556
[36]	Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872
[37]	Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303
[38]	She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303
[39]	She X J, Liu C H, Sun Q J, Liu J, Gao X, Wang S D 2012 Org. Electron. 13 1908
[40]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303
[41]	Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216
[42]	Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243
[43]	Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933
[44]	Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823
[45]	Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901
[46]	Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165
[47]	Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910
[48]	Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383
[49]	Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409
[50]	Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593
[51]	Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108
[52]	Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309
[53]	Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1
[54]	Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108
[55]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[56]	Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721
[57]	Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011
[58]	Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502
[59]	Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015
[60]	Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047
[61]	Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308
[62]	Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892
[63]	Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902
[64]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303
[65]	Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504
[66]	Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568
[67]	Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895
[68]	Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473
[69]	Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

施引文献

[1]	Dong J, Chai Y H, Zhao Y Z, Shi W W, Guo Y X, Yi M D, Xie L H, Huang W 2013 Acta Phys. Sin. 62 047301 (in Chinese) [董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维 2013 物理学报 62 047301]
[2]	Martins R, Ferreira I, Barquinha P, Correia N, Gonçalves G, Ferreira I, Dias C, Fortunato E 2011 Proc. of SPIE 7603 760314
[3]	He X D, Liao X M, Jiang S B, Song Z X 2011 Chem. Inter. 3 36 (in Chinese) [何晓东, 廖学明, 姜胜斌, 宋志祥 2011 化工中间体 3 36]
[4]	Song H C, Lu J 2003 Synth. Tech. Appl. 18 17(in Chinese) [宋厚春, 陆军 2003 合成技术及应用 18 17]
[5]	Liu N Q, Gu W, Qiao Q, Tian Y G 2004 J. Univ. Tech. (Nat. Sci. Ed.) 25 7 (in Chinese) [刘乃青, 顾巍, 乔迁, 田一光 2004 长春工业大学学报(自然科学版) 25 7]
[6]	Cui Y L, Zhang Z H, Jiang L, Ou X M 2005 Plastics Sci. Technol. 3 50 (in Chinese) [崔永丽, 张仲华, 江利, 欧雪梅 2005 塑料科技 3 50]
[7]	Guo Y L, Yu Gui, Liu Y Q 2010 Adv. Mater. 22 4427
[8]	Huang W, Mi B X, Gao Z Q 2011 Organic Electronics (Beijing: Science Press) p175 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第175页]
[9]	Zaumseil J, Sirringhaus H 2007 Chem. Rev. 107 1296
[10]	Richards T J, Sirringhaus H 2007 J. Appl. Phys. 102 094510
[11]	Chang C C, Pei Z, Chan Y J 2008 Appl. Phys. Lett. 93 143302
[12]	Lee K H, Lee G, Lee K, Oh M S, Im S, Yoon S M 2009 Adv. Mater. 21 4287
[13]	Zhou Y, Han S T, Xu Z X, Roy V A L 2012 Nanotechnology 23 344014
[14]	Baeg K J, Khim D, Kim J, Yang B D, Kang M, Jung S W, You I K, Kim D Y, Noh Y Y 2012 Adv. Funct. Mater. 22 2915
[15]	Gupta R K, Ying G, Srinivasan M P, Lee P S 2012 J. Phys. Chem. B 116 9784
[16]	Ortiz R P, Facchetti A, Marks T J 2010 Chem. Rev. 110 205
[17]	Roberts M E, Queralto N, Mannsfeld S C B, Reinecke B N, Knoll W, Bao Z N 2009 Chem. Mater. 21 2292
[18]	Wang W, Ma D G 2010 Chin. Phys. Lett. 27 018503
[19]	Leong W L, Lee P S, Mhaisalkar S G, Chen T P, Dodabalapur A 2007 Appl. Phys. Lett. 90 042906
[20]	Chang M F, Lee P T, McAlister S P, Chin A L 2008 Appl. Phys. Lett. 93 233302
[21]	Han K S, Park Y, Han G, Lee B H, Lee K H, Son D H, Im S, Sung M M 2012 J. Mater. Chem. 22 19007
[22]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516
[23]	Kaltenbrunner M, Stadler P, Schwödiauer R, Hassel A W, Sariciftci N S, Bauer S 2011 Adv. Mater. 23 4892
[24]	Gupta R K, Kusuma D Y, Lee P, Srinivasan M P 2011 Acs. Appl. Mater. Inter. 3 4619
[25]	Baeg K J, Noh Y Y, Sirringhaus H, Kim D Y 2010 Adv. Funct. Mater. 20 224
[26]	Kim S J, Lee J S 2010 Nano Lett. 10 2884
[27]	Khan H U, Roberts M E, Knoll W, Bao Z N 2011 Chem. Mater. 23 1946
[28]	Kim S J, Song J M, Lee J S 2011 J. Mater. Chem. 21 14516
[29]	Yu X G, Yu J S, Huang W, Zeng H J 2012 Chin. Phys. B 21 117307
[30]	Zhang H, Mi B X, Li X, Gao Z Q, Zhao L, Huang W 2013 Chin. Phys. Lett. 30 028501
[31]	Tian H J, Cheng X M, Zhao G, Liang X Y, Du B Q, Wu F 2012 Chin. Phys. Lett. 29 098503
[32]	Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306
[33]	Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203
[34]	Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972
[35]	Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556
[36]	Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872
[37]	Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303
[38]	She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303
[39]	She X J, Liu C H, Sun Q J, Liu J, Gao X, Wang S D 2012 Org. Electron. 13 1908
[40]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303
[41]	Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216
[42]	Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243
[43]	Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933
[44]	Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823
[45]	Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901
[46]	Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165
[47]	Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910
[48]	Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383
[49]	Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409
[50]	Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593
[51]	Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108
[52]	Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309
[53]	Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1
[54]	Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108
[55]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[56]	Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721
[57]	Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011
[58]	Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502
[59]	Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015
[60]	Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047
[61]	Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308
[62]	Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892
[63]	Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902
[64]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303
[65]	Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504
[66]	Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568
[67]	Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895
[68]	Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473
[69]	Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

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