铁电双层膜的反转动力学行为

崔莲; 邱忠阳; 李瑞英; 刘永皓; 李玉春; 夏遵义; 胡同瑞; 吕天全

doi:10.7498/aps.63.056802

摘要

基于Landau-Khalatnikov运动方程，本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为（包括平均极化、反转时间、反转电流和矫顽场）. 研究结果表明：在铁电双层膜系统中存在一个竞争的机理，即表面过渡层与界面耦合的竞争作用. 我们发现在双层膜反转过程中出现了反常行为，这些反常行为归因于表面过渡层与界面耦合之间的竞争. 表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.

关键词:

Abstract

Based on the Landau-Khalatnikov equation of motion, the switching dynamic behaviors, (including the average polarization, switching time, switching current and coercive field) of a ferroelectric bilayer film with a surface transition layer within each constituent thin film and a ferroelectric interfacial coupling between two thin films have been investigated. Results reveal that there is a competitive mechanism in the bilayer film, the action of surface transition layer and the interfacial coupling. The abnormal behavior is discovered in the polarization reversal process of the bilayer film, which can be attributed to the competition between the surface transition layer and the interfacial coupling. The combined action of surface transition layer and interfacial coupling plays a decisive role on the dynamic properties of a ferroelectric bilayer film.

Keywords:

作者及机构信息

1.
大庆师范学院物理与电气信息工程学院, 物理系, 大庆 163712;

2.
哈尔滨工业大学凝聚态物理研究所, 哈尔滨 150001

基金项目: 国家自然科学基金（批准号：11247255）、黑龙江省青年科学基金（批准号：QC2013C007）和大庆师范学院博士启动基金（批准号：11ZR07）资助的课题.

Authors and contacts

1.
Department of Physics, Daqing Normal University, Daqing 163712, China;

2.
Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11247255), the Youth Science Foundation of Heilongjiang Province, China (Grant No. QC2013C007), and the Doctoral Start-up Fund of Daqing Normal University of China (Grant No. 11ZR07).

参考文献

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施引文献

[1]	Pertsev N A, Janolin P E, Kiat J M, Uesu Y 2010 Phys. Rev. B 81 144118
[2]	Zhu Z Y, Wang B, Zheng Y, Wang H, Li Q K, Li C L 2007 Acta Phys. Sin. 56 5986 (in Chinese) [朱振亚, 王彪, 郑跃, 王海, 李青坤 2007 物理学报 56 5986]
[3]	Cui L, L T Q, Xue H J, Sun P N 2010 Chin. Phys. B 19 077701
[4]	Qiu J H Jiang Q 2009 Solid State Commun. 149 1549
[5]	Jaekwang L, Sai N, Cai T Y, Niu Q., Demkov A A 2010 Phys. Rev. B 81 144425
[6]	Nagarajan V, Junquera J, He J Q, Jia C L, Waser R, Lee K, Kim Y K, Baik S, Zhao T, Ramesh R, Ghosez Ph, Rabe K M 2006 J. Appl. Phys. 100 051609
[7]	Bao D H, Lee S K, Zhu X H, Alexe M, Hesse D 2005 Appl. Phys. Lett. 86 082906
[8]	Im J, Auciello O, Streiffer S K 2002 Thin Solid Films 413 243
[9]	Ranjith R,, Krupanidhi S B 2007 Appl. Phys. Lett. 91 082907
[10]	Yang B, Zhang D M, Zheng C D, Wang J, Yu J 2007 J. Phys. D: Appl. Phys. 40 5696
[11]	Roytburd A L, Zhong S Alpay S P 2005 Appl. Phys. Lett. 87 092902
[12]	Cui L, Xu Q, Xu X, Li Y C, He Z L, Che J X, L T Q 2011 Solid State Science 13 2185
[13]	Lee T Y, Ong L H 2011 AIP Conf. Proc. 1328 80
[14]	Chew K H, Ong L H, Iwata M 2011 Curr. Appl. Phys. 11 755
[15]	Ong L H, Lee T Y, Chew K H 2011 Ceramics Inter. 38 S3
[16]	L T Q, Cao W 2002 Phys. Rev. B 66 024102
[17]	L T Q, W Cao 2003 Microelec. Engin. 66 818
[18]	Sun P N, Cui L, L T Q 2009 Chin. Phys. B 18 1658
[19]	Lo V C 2003 J. Appl. Phys. 94 3353
[20]	Lo V C Chen Z J 2002 IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49 980
[21]	Ong L-H, Osman J, Tilley D R 2002 Phys. Rev. B 65 134108
[22]	Cui L, Xu Q, Han Z Y, Xu X, Che J X, Xue H J, L T Q 2013 Solid State Science 16 65

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