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GaN基发光二极管衬底材料的研究进展

陈伟超 唐慧丽 罗平 麻尉蔚 徐晓东 钱小波 姜大朋 吴锋 王静雅 徐军

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GaN基发光二极管衬底材料的研究进展

陈伟超, 唐慧丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军

Research progress of substrate materials used for GaN-Based light emitting diodes

Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun
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  • GaN基发光二极管(LED)作为第三代照明器件在近年来发展迅猛. 衬底材料作为LED制造的基础,对器件制备与应用具有极其重要的影响. 本文分析综述了衬底材料影响LED器件设计与制造的关键特性(晶格结构、热胀系数、热导率、光学透过率、导电性),对比了几种常见衬底材料(蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓)在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展,并对几种材料的发展前景做出了展望.
    GaN-based light emitting diodes (LEDs) as the third generation of lighting devices, have been rapidly developed in recent years. Substrate materials, serving as the LED manufacturing basis, have great influences on the production and application of LED. The critical characteristics of substrate affecting the design and fabrication of LED are its crystal structure, thermal expansion coefficient, thermal conductivity, optical transmittance, and electrical conductivity. In this paper, we compare several common substrate materials, namely, sapphire, silicon carbide, silicon, gallium nitride and gallium oxide, review the research progress of the substrate materials in the aspects of high quality epitaxial growths, high performance device designs and preparations of substrates, and comment on their further development.
    • 基金项目: 上海市科委科技基金(批准号:13521102700)和国家自然科学基金(批准号:61177037)资助的课题.
    • Funds: Project supported by the Shanghai Committee of Science and Technology, China (Grant No. 13521102700) and the National Natural Science Foundation of China (Grant No. 61177037).
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    Yukio N, Masatsugu I, Daisuke S, Masahiko S, Takashi M 2010 J. Phys. D: Appl. Phys. 43 354002

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    Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756]

    [4]

    Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星2005 物理学报 54 5344]

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    Xing Y H, Han J, Deng J, Li J J, Xu C, Sheng G D 2010 Acta Phys. Sin. 59 1233 (in Chinese) [邢艳辉, 韩军, 邓军, 李建军, 徐晨, 沈光地 2010 物理学报 59 1233]

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    Schubert E F 2006 Light-Emitting Diodes (2nd Ed.) (New York: Cambridge University Press) p86

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    [8]

    Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T 2001 Jpn. J. Appl. Phys. 40 L583

    [9]

    Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nat. Photon. 3 180

    [10]

    Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 物理学报 57 477]

    [11]

    Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R 2007 Appl. Phys. Lett. 91 141101

    [12]

    Vampola K J, Iza M, Keller S, DenBaars S P, Nakamura S 2009 Appl. Phys. Lett. 94 061116

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    Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]

    [14]

    Liu M L, Min Q Y, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋应, 叶志清 2012 物理学报 61 178503]

    [15]

    Den Baars S P, Feezell D, Kelchner K, Pimputkar S, Pan C C, Yen C C, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck J S, Nakamura S 2013 Acta Mater. 61 945

    [16]

    Mendes M, Fu J, Porneala C, Song X, Hannon M, Sercel J 2010 SPIE Proceedings San Francisco, USA, February 17, 2010 p75840T

    [17]

    Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653

    [18]

    Lester S D, Ponce F A, Craford M G, Steigerwald D A 1995 Appl. Phys. Lett. 66 1249

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    Rieger W, Metzger T, Angerer H, Dimitrov R, Ambacher O, Stutzmann M 1996 Appl. Phys. Lett. 68 970

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    [21]

    Shin I S, Lee D, Lee K H, You H, Moon D Y, Park J, Nanishi Y, Yoon E 2013 Thin Solid Films 546 118

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    Levinshtein M E, Rumyantsev S L, Shur M S 2001 Properties of Advanced SemiconductorMaterials GaN, AlN, SiC, BN, SiC, SiGe (New York: John Wiley & Sons) p93

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  • 收稿日期:  2013-11-01
  • 修回日期:  2013-12-17
  • 刊出日期:  2014-03-05

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