搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

纤锌矿结构ZnO/MgxZn1-xO量子阱中带间光吸收的尺寸效应和三元混晶效应

谷卓 班士良

引用本文:
Citation:

纤锌矿结构ZnO/MgxZn1-xO量子阱中带间光吸收的尺寸效应和三元混晶效应

谷卓, 班士良

Size and ternary mixed crystal effects on interband absorption in wurtzite ZnO/MgxZn1-xO quantum wells

Gu Zhuo, Ban Shi-Liang
PDF
导出引用
  • 对于纤锌矿结构ZnO/MgxZn1-xO有限深单量子阱结构,考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法和自洽法数值求解Schrödinger方程和Poisson 方程,获得电子(空穴)的本征能级和本征波函数. 进而,采用费米黄金法则讨论带间光吸收的尺寸效应和三元混晶效应. 结果表明:三元混晶材料MgxZn1-xO中Mg组分的增加会增强垒层和阱层的内建电场强度,使得电子(空穴)平均位置靠近左(右)垒,导致带间跃迁吸收峰呈指数减小且发生蓝移;ZnO/MgxZn1-xO 量子阱带间跃迁吸收峰随阱宽增大而减小,吸收峰发生红移. 所得结果可为改善异质结构材料和器件的光电性能提供理论指导,以期获得实际应用所需的光学吸收频谱和波长.
    Adopting a numerical method of solving self-consistently the Schrödinger equation and Poisson equation, the eigenstates and eigenenergies of electrons (holes) in a two-dimensional electron-hole gas are obtained for wurtzite asymmetric ZnO/MgxZn1-xO single quantum wells (QWs). In our computation, a realistic heterostructure potential is used, in which the influences from energy band bending, material doping and the built-in electric field induced by spontaneous and piezoelectric polarizations are taken into account. Furthermore, based on the Fermi's golden rule, the optical absorptions of electronic interband transitions in QWs, and their size and ternary mixed crystal effects are discussed. The results indicate that the increase of the Mg component in MgxZn1-xO enhances the build-in electric field, which forces electrons (holes) to approach to the left (right) barrier. This causes the interband transition absorption peak to decrease exponentially and to be blue-shifted. For different widths of QWs, the calculated results show that absorption peak decreases and transition energy shows a red shift with the increase of well width. The above conclusions are expected to give a theoretical guidance for improving the opto-electronic properties of materials and devices made of heterostructures with suitable optical absorption spectra and wave lengths.
    • 基金项目: 国家自然科学基金(批准号:61274098)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61274098).
    [1]

    Kang H S, Kim G H, Lim S H, Chang H W, Kim J H, Lee S Y 2008 Thin Solid Films 516 3147

    [2]

    Shinde S S, Bhosale C H, Rajpure K Y 2012 Solid State Electron. 68 22

    [3]

    Janthong B, Moriya Y, Hongsingthong A, Sichanugrist P, Konagai M 2013 Sol. Energy Mater. Sol. Cells 119 209

    [4]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

    [5]

    Zhong M, Sheng D, Li C L, Xu S Q, Wei X 2014 Sol. Energy Mater. Sol. Cells 121 22

    [6]

    Sonawane B K, Bhole M P, Patil D S 2009 Mater. Sci. Semicond. Process. 12 212

    [7]

    Qu Y, Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese) [屈媛, 班士良 2010 物理学报 59 4863]

    [8]

    Yang F J, Ban S L 2012 Acta Phys. Sin. 61 087201 (in Chinese) [杨福军, 班士良 2012 物理学报 61 087201]

    [9]

    Ning G H, Zhao X P, Li J 2004 Opt. Mater. 27 1

    [10]

    Ding R, Xu C X, Gu B X, Shi Z L, Wang H T, Ba L, Xiao Z D 2010 J. Mater. Sci. Technol. 26 601

    [11]

    Look D C 2001 Mater. Sci. Eng. B 80 383

    [12]

    Liu W W, Yao B, Li B H, Li Y F, Zheng J, Zhang Z Z, Shan C X, Zhang J Y, Shen D Z, Fan X W 2010 Solid State Sci. 12 1567

    [13]

    Khan M A, Skogman R A, van Hove J M, Krishnankutty S, Kolbas R M 1990 Appl. Phys. Lett. 56 1257

    [14]

    Berland K, Stattin M, Farivar R, Sultan D M S, Hyldgaard P, Larsson A, Wang S M, Andersson T G 2010 Appl. Phys. Lett. 97 043507

    [15]

    Fan W J, Abiyasa A P, Tan S T, Yu S F, Sun X W, Xia J B, Yeo Y C, Li M F, Chong T C 2006 J. Cryst. Growth 287 28

    [16]

    Zhu J, Ban S L, Ha S H 2013 Superlattices Microstruct. 56 92

    [17]

    Yamamoto K, Tsuboi T, Ohashi T, Tawara T, Gotoh H, Nakamura A, Temmyo J 2010 J. Cryst. Growth 312 1703

    [18]

    Li J M, L Y W, Li D B, Han X X, Zhu Q S, Liu X L, Wang Z G 2004 J. Vac. Sci. Technol. B 22 2568

    [19]

    Zippel J, Heitsch S, Stölzel M, Mller A, Wenckstern H, Benndorf G, Lorenz M, Hochmuth H, Grundmann M 2010 J. Lumin. 130 520

    [20]

    Koffyberg F P 1976 Phys. Rev. B 13 4470

    [21]

    Roessler D M, Walker W C 1967 Phys. Rev. 159 733

    [22]

    Davis J A, Dao L V, Wen X, Ticknor C, Hannaford P, Coleman V A, Tan H H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M 2008 Nanotechnology 19 055205

    [23]

    Ha S H, Ban S L 2007 J. Inner Mongolia Univ. (Nat. Sci. Ed.) 38 272 (in Chinese) [哈斯花, 班士良 2007 内蒙古大学学报 (自然科学版) 38 272]

    [24]

    Chi Y M, Shi J J 2008 J. Lumin. 128 1836

    [25]

    Doyeol A, Park S H 2006 J. Semicond. Technol. Sci. 6 125

    [26]

    Zhang X, Li X M, Chen T L, Bian J M, Zhang C Y 2005 Thin Solid Films 492 248

    [27]

    Su S C, Lu Y M, Zhang Z Z, Li B H, Shen D Z, Yao B, Zhang J Y, Zhao D X, Fan X W 2008 Appl. Surf. Sci. 254 4886

    [28]

    Yuan J R, Li Y Q, Deng X H 2006 J. Nanchang Univ. (Eng. Technol. Ed.) 28 329 (in Chinese) [袁吉仁, 李要球, 邓新华 2006 南昌大学学报 (工科版) 28 329]

  • [1]

    Kang H S, Kim G H, Lim S H, Chang H W, Kim J H, Lee S Y 2008 Thin Solid Films 516 3147

    [2]

    Shinde S S, Bhosale C H, Rajpure K Y 2012 Solid State Electron. 68 22

    [3]

    Janthong B, Moriya Y, Hongsingthong A, Sichanugrist P, Konagai M 2013 Sol. Energy Mater. Sol. Cells 119 209

    [4]

    Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]

    [5]

    Zhong M, Sheng D, Li C L, Xu S Q, Wei X 2014 Sol. Energy Mater. Sol. Cells 121 22

    [6]

    Sonawane B K, Bhole M P, Patil D S 2009 Mater. Sci. Semicond. Process. 12 212

    [7]

    Qu Y, Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese) [屈媛, 班士良 2010 物理学报 59 4863]

    [8]

    Yang F J, Ban S L 2012 Acta Phys. Sin. 61 087201 (in Chinese) [杨福军, 班士良 2012 物理学报 61 087201]

    [9]

    Ning G H, Zhao X P, Li J 2004 Opt. Mater. 27 1

    [10]

    Ding R, Xu C X, Gu B X, Shi Z L, Wang H T, Ba L, Xiao Z D 2010 J. Mater. Sci. Technol. 26 601

    [11]

    Look D C 2001 Mater. Sci. Eng. B 80 383

    [12]

    Liu W W, Yao B, Li B H, Li Y F, Zheng J, Zhang Z Z, Shan C X, Zhang J Y, Shen D Z, Fan X W 2010 Solid State Sci. 12 1567

    [13]

    Khan M A, Skogman R A, van Hove J M, Krishnankutty S, Kolbas R M 1990 Appl. Phys. Lett. 56 1257

    [14]

    Berland K, Stattin M, Farivar R, Sultan D M S, Hyldgaard P, Larsson A, Wang S M, Andersson T G 2010 Appl. Phys. Lett. 97 043507

    [15]

    Fan W J, Abiyasa A P, Tan S T, Yu S F, Sun X W, Xia J B, Yeo Y C, Li M F, Chong T C 2006 J. Cryst. Growth 287 28

    [16]

    Zhu J, Ban S L, Ha S H 2013 Superlattices Microstruct. 56 92

    [17]

    Yamamoto K, Tsuboi T, Ohashi T, Tawara T, Gotoh H, Nakamura A, Temmyo J 2010 J. Cryst. Growth 312 1703

    [18]

    Li J M, L Y W, Li D B, Han X X, Zhu Q S, Liu X L, Wang Z G 2004 J. Vac. Sci. Technol. B 22 2568

    [19]

    Zippel J, Heitsch S, Stölzel M, Mller A, Wenckstern H, Benndorf G, Lorenz M, Hochmuth H, Grundmann M 2010 J. Lumin. 130 520

    [20]

    Koffyberg F P 1976 Phys. Rev. B 13 4470

    [21]

    Roessler D M, Walker W C 1967 Phys. Rev. 159 733

    [22]

    Davis J A, Dao L V, Wen X, Ticknor C, Hannaford P, Coleman V A, Tan H H, Jagadish C, Koike K, Sasa S, Inoue M, Yano M 2008 Nanotechnology 19 055205

    [23]

    Ha S H, Ban S L 2007 J. Inner Mongolia Univ. (Nat. Sci. Ed.) 38 272 (in Chinese) [哈斯花, 班士良 2007 内蒙古大学学报 (自然科学版) 38 272]

    [24]

    Chi Y M, Shi J J 2008 J. Lumin. 128 1836

    [25]

    Doyeol A, Park S H 2006 J. Semicond. Technol. Sci. 6 125

    [26]

    Zhang X, Li X M, Chen T L, Bian J M, Zhang C Y 2005 Thin Solid Films 492 248

    [27]

    Su S C, Lu Y M, Zhang Z Z, Li B H, Shen D Z, Yao B, Zhang J Y, Zhao D X, Fan X W 2008 Appl. Surf. Sci. 254 4886

    [28]

    Yuan J R, Li Y Q, Deng X H 2006 J. Nanchang Univ. (Eng. Technol. Ed.) 28 329 (in Chinese) [袁吉仁, 李要球, 邓新华 2006 南昌大学学报 (工科版) 28 329]

  • [1] 刘东静, 胡志亮, 周福, 王鹏博, 王振东, 李涛. 基于分子动力学的氮化镓/石墨烯/金刚石界面热导研究. 物理学报, 2024, 0(0): . doi: 10.7498/aps.73.20240515
    [2] 王飞, 李全军, 胡阔, 刘冰冰. 高压导致纳米TiO2形变的电子显微研究. 物理学报, 2023, 72(3): 036201. doi: 10.7498/aps.72.20221656
    [3] 安敏荣, 李思澜, 宿梦嘉, 邓琼, 宋海洋. 尺寸依赖的CoCrFeNiMn晶体/非晶双相高熵合金塑性变形机制的分子动力学模拟. 物理学报, 2022, 71(24): 243101. doi: 10.7498/aps.71.20221368
    [4] 邰建鹏, 郭伟玲, 李梦梅, 邓杰, 陈佳昕. GaN基微缩化发光二极管尺寸效应和阵列显示. 物理学报, 2020, 69(17): 177301. doi: 10.7498/aps.69.20200305
    [5] 张龙艳, 徐进良, 雷俊鹏. 尺寸效应对微通道内固液界面温度边界的影响. 物理学报, 2019, 68(2): 020201. doi: 10.7498/aps.68.20181876
    [6] 阳喜元, 全军. 金属纳米线弹性性能的尺寸效应及其内在机理的模拟研究. 物理学报, 2015, 64(11): 116201. doi: 10.7498/aps.64.116201
    [7] 任丹, 杜平安, 聂宝林, 曹钟, 刘文奎. 一种考虑小孔尺寸效应的孔阵等效建模方法. 物理学报, 2014, 63(12): 120701. doi: 10.7498/aps.63.120701
    [8] 李鑫, 羊梦诗, 叶志鹏, 陈亮, 徐灿, 储修祥. 甘氨酸色氨酸寡肽链的红外光谱的密度泛函研究. 物理学报, 2013, 62(15): 156103. doi: 10.7498/aps.62.156103
    [9] 羊梦诗, 李鑫, 叶志鹏, 陈亮, 徐灿, 储修祥. 丝素氨基酸寡肽链生长过程中的尺寸效应. 物理学报, 2013, 62(23): 236101. doi: 10.7498/aps.62.236101
    [10] 杨福军, 班士良. 纤锌矿AlGaN/AlN/GaN异质结构中光学声子散射影响的电子迁移率. 物理学报, 2012, 61(8): 087201. doi: 10.7498/aps.61.087201
    [11] 王度阳, 孙慧卿, 解晓宇, 张盼君. GaN基LED量子阱内量子点发光性质的模拟分析. 物理学报, 2012, 61(22): 227303. doi: 10.7498/aps.61.227303
    [12] 张祺, 厚美瑛. 直剪颗粒体系的尺寸效应研究. 物理学报, 2012, 61(24): 244504. doi: 10.7498/aps.61.244504
    [13] 周国荣, 滕新营, 王艳, 耿浩然, 许甫宁. 尺寸效应对Al纳米线凝固行为的影响. 物理学报, 2012, 61(6): 066101. doi: 10.7498/aps.61.066101
    [14] 屈媛, 班士良. 纤锌矿氮化物量子阱中光学声子模的三元混晶效应. 物理学报, 2010, 59(7): 4863-4873. doi: 10.7498/aps.59.4863
    [15] 周志东, 张春祖, 张颖. 外延铁电薄膜相变温度的尺寸效应. 物理学报, 2010, 59(9): 6620-6625. doi: 10.7498/aps.59.6620
    [16] 徐 灿, 曹 娟, 高晨阳. 第一性原理研究一维SiO2纳米材料的结构和性质. 物理学报, 2006, 55(8): 4221-4225. doi: 10.7498/aps.55.4221
    [17] 吴国强, 孔宪仁, 孙兆伟, 王亚辉. 氩晶体薄膜法向热导率的分子动力学模拟. 物理学报, 2006, 55(1): 1-5. doi: 10.7498/aps.55.1
    [18] 张 芸, 张波萍, 焦力实, 李向阳. Au/SiO2纳米复合薄膜的微结构及光吸收特性研究. 物理学报, 2006, 55(4): 2078-2083. doi: 10.7498/aps.55.2078
    [19] 艾树涛, 蔡元贞. 与相变潜热有关的铁电-顺电相界动力学及其尺寸效应. 物理学报, 2006, 55(7): 3721-3724. doi: 10.7498/aps.55.3721
    [20] 王松有, 巨晓华, 李合印, 许旭东, 周鹏, 张荣君, 杨月梅, 周仕明, 陈良尧. Fe-Ag颗粒膜的光学与磁光尺寸效应. 物理学报, 2001, 50(11): 2252-2257. doi: 10.7498/aps.50.2252
计量
  • 文章访问数:  5538
  • PDF下载量:  440
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-01-02
  • 修回日期:  2014-02-10
  • 刊出日期:  2014-05-05

/

返回文章
返回