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水热合成ZnO:Cd纳米棒的微结构及光致发光特性

王长远 杨晓红 马勇 冯媛媛 熊金龙 王维

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水热合成ZnO:Cd纳米棒的微结构及光致发光特性

王长远, 杨晓红, 马勇, 冯媛媛, 熊金龙, 王维

Microstructure and photoluminescence of ZnO:Cd nanorods synthesized by hydrothermal method

Wang Chang-Yuan, Yang Xiao-Hong, Ma Yong, Feng Yuan-Yuan, Xiong Jin-Long, Wang Wei
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  • 采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性. 结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小. 由于内部张应力的影响,Cd掺杂使得材料光学带隙减少. 当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.
    High-quality ZnO and Cd-doped ZnO nanorods with different Cd-doping concentrations are synthesized by using the hydrothermal method. Microstructures and photoluminescence of the samples are systematically investigated by SEM, X-ray diffraction (XRD), Raman scattering spectrum and photoluminescence (PL) spectrum. Results of XRD analysis indicate that ZnO and ZnO:Cd crystallites exhibit a hexagonal wurtzite structure. SEM shows that the nanorods become smaller due to Cd doping. There is an internal tension which induces the decrease of optical band gap in Cd-doped nanorods. Cd-doping increases the intensity of violet emission peak near 2.90 eV and the blue emission peak located at 2.67 eV appears when the doping concentration is up to 2%. This study can be used for developing blue-violet-emitting devices.
    • 基金项目: 庆师范大学博士启动基金(批准号:10XLB001)和国家自然科学基金青年基金(批准号:61106129)资助的课题.
    • Funds: Project supported by the Doctoral Foundation of Chongqing Normal University, China (Grant No. 10XLB001), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106129).
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    [2]

    Cheng P F, Li S T, Wang H 2013 Chin. Phys. B 22 107701

    [3]
    [4]
    [5]

    Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305

    [6]
    [7]

    Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 物理学报 62 176801]

    [8]
    [9]

    Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104

    [10]

    Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101

    [11]
    [12]
    [13]

    Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501

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    [15]

    Hosseinmardi A, Shojaee N, Keyanpour R M, Ebadzadeh T 2012 Cera. Inter. 38 1975

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    [17]

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    [18]

    Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628

    [19]
    [20]
    [21]

    Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440

    [22]

    Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881

    [23]
    [24]

    Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061

    [25]
    [26]

    Yakuphanoglu F, Ilican S, Caglar M, Caglar Y 2010 Super. Micro. 47 732

    [27]
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    [29]

    Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405

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    Vijayalakshmi S, Venkataraj S, Jayavel R 2008 J. Phys. D: Appl. Phys. 41 245403

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    Tang X, Lv H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta. Phys. Sin 57 1066 (in Chinese) [唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜 2008 物理学报 57 1066]

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    [40]

    Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681

    [41]
    [42]
    [43]

    Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660

    [44]

    Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118

    [45]
    [46]

    Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698

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出版历程
  • 收稿日期:  2014-03-11
  • 修回日期:  2014-04-08
  • 刊出日期:  2014-08-05

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