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本文从放电靶电流出发,采用一种新的研究方法,即将靶电流分解为多个代表具体放电特性的特征参数,全面而系统的研究了不同的工作气压条件下,靶电流各特征参数随靶电压的增加而进行的演化. 结果发现高功率脉冲磁控溅射技术(HPPMS)放电靶电流在靶电压由低向高增加的过程中,出现靶电流峰值和平台值的交替变化,体现出明显的阶段性放电特征,且不同的放电阶段在不同气压下出现一定的移动,会在测量范围内出现某些放电阶段的缺失. 本文还通过等离子体发射光谱对HPPMS放电靶前等离子体测量发现五个不同的放电阶段分别主要对应氩原子、铬原子、氩离子、铬离子和氩、铬高价离子的放电,但不同的放电条件下相邻的阶段会出现一定程度的交叠.As one of the burgeoning physical vapor deposition (PVD) techniques, high power pulsed magnetron sputtering (HPPMS), which boasts high ionization rates of sputtered materials and does not suffer from macro-particles, has been investigated extensively recently. Herein, a new method to break down the discharge current into different characteristic components is employed to study the changes of the various parameters as the target voltage is increased at different pressure. Results show a phasic HPPMS discharge when the target voltage is increased, exhibiting an alternate rise of the peak and the platform of the target current. A small change at the discharge stage is observed with increasing pressure, and some stages are missing in some instances. Five discharge stages are found to correspond to the discharge of Ar atoms, Cr atoms, Ar ions, Cr ions, as well as multiply-charged Ar and Cr ions, respectively, according to the optical emission spectra obtained from the HPPMS discharge plasma. Adjacent discharge stages are also found to overlap under certain discharge conditions.
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Keywords:
- high power pulsed magnetron sputtering /
- discharge target current /
- gas pressure /
- phasic discharge
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[1] Tian M B 2006 Thin Film Technologies and Materials (Beijing: Tsinghua University Press) p445 (in Chinese)[田民波2006薄膜技术与薄膜材料(北京: 清华大学出版社)第445页]
[2] Yang D, Zhong N, Shang H L, Sun S Y, Li G Y 2013 Acta Phys. Sin. 62 36801 (in Chinese)[杨铎, 钟宁, 尚海龙, 孙士阳, 李戈扬 2013 物理学报 62 36801]
[3] [4] [5] Wang Y J, Li H X, Ji L, Liu X H, Wu Y X, Zhou H D, Chen J M 2012 Chin. Phys. B 21 016101
[6] Posadowski W M 1995 Vacuum 46 1017
[7] [8] [9] Xu J, Ma T C, Lu W Q, Xia Y L, Deng X L 2000 Chin. Phys. Lett. 17 586
[10] Kouznetsov V, Maca'k K, Schneider J M, Helmersson U, Petrov I 1999 Surf. Coat. Technol. 122 290
[11] [12] Yukimura K, Ehiasarian A P 2010 IEEE Trans. Plasma Sci. 11 3005
[13] [14] [15] Bohlmark J, Gudmundsson J T, IEEE M, Alami J, Latteman M, Helmersson U 2005 IEEE Trans. Plasma Sci. 33 346
[16] [17] Bohlmark J, Alami J, Christou C, Ehiasarian A P, Helmersson U 2005 J. Vac. Sci. Technol. A 23 18
[18] Mu Z X, Mu X D, Wang C, Jia L, Dong C 2011 Acta Phys. Sin. 60 15204 (in Chinese)[牟宗信, 牟晓东, 王春, 贾莉, 董闯 2011 物理学报 60 15204]
[19] [20] Anders A, Andersson J Ehiasarian A P 2007 J. Appl. Phys. 102 113303
[21] [22] Wang T, Jiang Y D, Yu H, Wu Z M, Zhao H N 2011 Chin. Phys. B 20 038101
[23] [24] Magnus F, Sveinsson O B, Olafsson S Gudmundsson J T 2011 J. Appl. Phys. 110 083306
[25] [26] Duan W Z 2010 Master Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[段伟赞2010 硕士学位论文(哈尔滨: 哈尔滨工业大学)]
[27] [28] Tian X B, Wu Z Z, Shi J W, Li X P, Gong C Z, Yang S Q 2010 Chin. Vac. 47 44 (in Chinese)[田修波, 吴忠振, 石经纬, 李希平, 巩春志, 杨士勤 2010 真空 47 44]
[29] [30] [31] Du Y Q, Liu W Y, Zhu A M, Li X S, Zhao T L, Liu Y X, Gao F, Xu Y, Wang Y N 2013 Acta Phys. Sin. 62 205208 (in Chinese)[杜永权, 刘文耀, 朱爱民, 李小松, 赵天亮, 刘永新, 高飞, 徐勇, 王友年 2013 物理学报 62 205208]
[32] Li Y P, Liu Z T 2009 Acta Phys. Sin. 58 5022 (in Chinese)[李阳平, 刘正堂 2009 物理学报 58 5022]
[33] [34] [35] Ma J, Pu Y K 2003 Chin. Phys. Lett. 20 1527
[36] [37] Gao F, Li X C, Zhao S X, Wang Y N 2012 Chin. Phys. B 21 075203
[38] Ehiasarian A P, New R, M. unz W-D, Hultman L, Helmersson U, Kouznetsov V 2002 Vacuum 65 147
[39] [40] Ehiasarian A P, Gonzalvo Y A, Whitmore T D 2007 Plasma Processes Polym. 4 S309
[41] [42] [43] Wu Z Z, Tian X B, Duan W Z, Gong C Z, Yang S Q 2010 Chin. J. Mater. Res. 24 561 (in Chinese)[吴忠振, 田修波, 段伟赞, 巩春志, 杨士勤 2010 材料研究学报 24 561]
[44] [45] Oks E, Anders A 2009 J. Appl. Phys. 105 09330401
[46] Carsten E, George C, Chan G, Buscher W, Hieftje G M 2008 Spectrochim. Acta, Part B 7 619
[47] [48] [49] Horwat D, Anders A 2008 J. Phys. D: Appl. Phys. 41 135210
[50] [51] Andersson J, Ehiasarian A P, Anders A 2008 Appl. Phys. Lett. 93 071504
[52] Benzeggouta D, Hugon M C, Bretagne J, Ganciu M 2009 Plasma Sources Sci. Technol. 18 04502501
[53] [54] Dunger T, Welzel T, Welzel S, Richter F 2005 Surf. Coat. Technol. 200 1676
[55] [56] [57] Anders A 2008 Appl. Phys. Lett. 92 201501
[58] [59] Kadlec S 2007 Plasma Processes Polym. 4 S419
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