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建立了调制激光诱发硅晶圆少数载流子密度波一维模型, 仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响. 利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究. 通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图. 该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符; 分析了划痕对载流子输运参数造成的影响, 与光电导方法比较, 该方法可以测量不同位置的全部载流子输运参数且分辨率高.
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关键词:
- 调制激光诱发载流子辐射 /
- 硅晶圆 /
- 输运参数 /
- 扫描成像
In this paper, the modulated laser-induced excess minority carrier density wave (CDW) of bipolar semiconductor is developed. An analytical expression of CDW in frequency domain is introduced. The numerical simulations are carried out to analyze the effects of minority carrier transport parameters (minority carrier lifetime, diffusion coefficient, and two surfaces recombination velocities) on response of laser-induced photocarrier radiometry (PCR) signal to frequency for semiconductor silicon wafer. The PCR amplitude increases with increasing the minority carrier lifetime, and decreased with increasing the carrier diffusion coefficient and surface recombination velocity. In contrast, the PCR phase lag decreases with increasing the minority carrier lifetime, and increases with increasing the carrier diffusion coefficient and surface recombination velocity. The silicon (Si) wafer with an artificial defect (mechanical scratch) on the surface is experimentally investigated by PCR scanning image system. The distribution maps of the minority carrier transport parameters are obtained by best-fitting method which is based on the carrier density wave analytical expression, and the influences of the artificial defect on carrier transport parameters are discussed in detail. The experimental results indicate that the surface recombination velocity and carrier diffusivity at artificial damaged location are dramatically increased compared with those in the healthy region. The carrier bulk lifetime of whole Si wafer is obtained to be about 38.33 μs by PCR scanning image measurements. Simultaneously, quasi steady-state photoconductance (QSSPC) method is used to measure the carrier effective lifetime of Si wafer, and it is about 33.85 μs. Therefore, the carrier bulk lifetime of Si wafer by PCR scanning image measurement is in good agreement with the QSSPC measurement. However, QSSPC measurement could obtain only the carrier effective lifetime of Si wafer. Furthermore, PCR scanning image measurement can be employed to measure the carrier transport parameters with high resolution in comparison with QSSPC measurement, and to evaluate the localized imperfection.-
Keywords:
- modulated laser-induced photocarrier radiometry /
- silicon wafer /
- carrier transport properties /
- scanning image
[1] Fujihira C, Morin M, Hashizume H, Friedt J, Nakai Y, Hirose M 1993 J. Appl. Phys. 32 1362
[2] Sinton R A, Cuevas A 1996 Appl. Phys. Lett. 69 2510
[3] Trupke T, Bardos R A, Schubert M C, Warta W 2006 Appl. Phys. Lett. 89 044107
[4] Zhang X R, Li B C, Liu X M 2008 Acta Phys. Sin. 57 7316 (in Chinese) [张希仁, 李斌成, 刘显明 2008 物理学报 57 7316]
[5] Mandelis A, Batista J, Shaughnessy D 2003 Phys. Rev. B 67 205208
[6] Li B C, Shaughnessy D, Mandelis A, Batista J 2004 J. Appl. Phys. 95 7832
[7] Li B C, Mandelis A, Shaughnessy D, Batista J, Garcia J 2004 J. Appl. Phys. 96 186
[8] Shaughnessy D, Mandelis A 2006 J. Electrochem. Soc. 153 G283
[9] Liu X M, Li B C, Huang Q P 2010 Chin. Phys. B 19 097201
[10] Sun Q M, Melnikov A, Mandelis A 2012 Appl. Phys. Lett. 101 242107
[11] Ren S D, Li B C, Gao L F, Wang Q 2013 Chin. Phys. B 22 057202
[12] Mandelis A 2001 Diffusion-wave Fields: Mathematical Methods and Green Functions (New York: Springer) p588
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[1] Fujihira C, Morin M, Hashizume H, Friedt J, Nakai Y, Hirose M 1993 J. Appl. Phys. 32 1362
[2] Sinton R A, Cuevas A 1996 Appl. Phys. Lett. 69 2510
[3] Trupke T, Bardos R A, Schubert M C, Warta W 2006 Appl. Phys. Lett. 89 044107
[4] Zhang X R, Li B C, Liu X M 2008 Acta Phys. Sin. 57 7316 (in Chinese) [张希仁, 李斌成, 刘显明 2008 物理学报 57 7316]
[5] Mandelis A, Batista J, Shaughnessy D 2003 Phys. Rev. B 67 205208
[6] Li B C, Shaughnessy D, Mandelis A, Batista J 2004 J. Appl. Phys. 95 7832
[7] Li B C, Mandelis A, Shaughnessy D, Batista J, Garcia J 2004 J. Appl. Phys. 96 186
[8] Shaughnessy D, Mandelis A 2006 J. Electrochem. Soc. 153 G283
[9] Liu X M, Li B C, Huang Q P 2010 Chin. Phys. B 19 097201
[10] Sun Q M, Melnikov A, Mandelis A 2012 Appl. Phys. Lett. 101 242107
[11] Ren S D, Li B C, Gao L F, Wang Q 2013 Chin. Phys. B 22 057202
[12] Mandelis A 2001 Diffusion-wave Fields: Mathematical Methods and Green Functions (New York: Springer) p588
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