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中国物理学会期刊

BiTiO3电子结构及光学性质的第一性原理研究

CSTR: 32037.14.aps.64.147102

First-principles study of electronic and optical properties of BiTiO3

CSTR: 32037.14.aps.64.147102
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  • 采用基于第一性原理的赝势平面波方法, 对BiTiO3的多种结构进行了计算. 计算结果表明, C1C1结构最为稳定, 对应晶格参数为a=b=5.606 Å, c=9.954 Å; α=β=105.1°, γ=61.2°. 进一步对C1C1结构的BiTiO3的能带结构、电子性质和光学性质进行了研究, 发现BiTiO3是间接带隙半导体, 其费米面附近的能带主要由Ti-3d和O-2p层的电子态构成. 通过介电函数、复折射率和反射率等的研究, 发现BiTiO3的光学性质为近各向同性.

     

    BiTiO3 of C1 C1 structure is found to be the most stable phase according to our first-principles calculations for nine possible structures, with corresponding optimized crystal parameters of a=b=5.606 Å, c=9.954 Å; α=β=105.1°, γ=61.2°. Subsequently, we have investigated the electronic and optical properties of BiTiO3 in C1C1 structure. It is found that BiTiO3 is a semiconductor with an indirect band gap with its energy band near Fermi level being dominated by O-2p and Ti-3d levels. Additionally, the dielectric function, refractive index, and reflectivity of BiTiO3 are also calculated, and it is shown that the optical properties of BiTiO3 are nearly isotropic.

     

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