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In this article, the recent progress of III-V quantum dot lasers on silicon substrates for silicon photonic integration is reviewed. By introducing various epitaxial techniques, room-temperature 1.3-m InAs/GaAs quantum dot laser on Si, Ge and SiGe substrates have been achieved respectively. Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm2 at room temperature, which can operate over 60 ℃ in continuous-wave mode. Futhermore, by using the SiGe virtual substrate, at 30 ℃ and an output power of 16.6 mW, a laser lifetime of 4600 h has been reached, which indicates a bright future for the large-scale photonic integration.
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Keywords:
- semiconductor laser /
- laser material /
- photonic integration /
- optoelectronic device
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[25] Choi H K, Wang C A, Karam N H 1991 Appl. Phys. Lett. 59 2633
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[30] Jalali B, Fathpour S 2006 J. Lightwave Techn. 24 4600
[31] Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725
[32] Chen X, Li C, Tsang H K 2011 NPG Asia Materials 3 34
[33] Park H, Fang A W, Kodama S, Bowers J E 2005 Opt. Express 13 9460
[34] Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[35] Liang D, Bowers J E 2010 Nat. Photon. 4 511
[36] Wang W 1984 Appl. Phys. Lett. 44 1149
[37] Fletcher R M, Wagner D K, Ballantyne J M 1984 Appl. Phys. Lett. 44 967
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[39] Deppe D, Nam D, Holonyak J N, Hsieh K, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 1271
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[41] Hall D, Deppe D, Holonyak J N, Matyi R, Shichijo H, Epler J 1988 J. Appl. Phys. 64 2854
[42] Linder K, Phillips J, Qasaimeh O, Liu X, Krishna S, Bhattacharya P, Jiang J 1999 Appl. Phys. Lett. 74 1355
[43] Kazi Z I, Egawa T, Umeno M, Jimbo T 2001 J. Appl. Phys. 90 5463
[44] Mi Z, Bhattacharya P, Yang J, Pipem K 2005 Electron. Lett. 41 742
[45] Mi Z, Yang J, Bhattacharya P, Huffaker D 2006 Electron. Lett. 42 121
[46] Yang J, Bhattacharya P, Mi Z 2007 IEEE Trans. Electron Devices 54 2849
[47] Yang J, Bhattacharya P, Wu Z 2007 IEEE Photon. Technol. Lett. 19 747
[48] Yang J, Bhattacharya P 2008 Opt. Express 16 5136
[49] Li L, Guimard D, Rajesh M, Arakawa Y 2008 Appl. Phys. Lett. 92 3105
[50] Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[51] Liu A Y, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 Appl. Phys. Lett. 104 041104
[52] Liu A Y, Zhang C, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 J. Vac. Sci. Technol. B 32 02C108
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[1] Zhou Z P 2012 Si-based Optoeletronics (Beijing: Beijing University Press) (in Chinese) [周治平 2012 硅基光电子学 (北京: 北京大学出版社)]
[2] Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C, Michel J 2012 Opt. Express 20 11316
[3] Wirths S, Geiger R, von den Driesch N, Mussler G, Stoica T, Mantl S, Ikonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D, Grtzmacher D 2015 Nat. Photon. 9 88
[4] D'Avezac M, Luo J W, Chanier T, Zunger A 2012 Phys. Rev. Lett. 108 027401
[5] Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F, Seeds A 2011 Nat. Photon. 5 416
[6] Wang T, Liu H, Lee A, Pozzi F, Seeds A 2011 Opt. Express 19 11381
[7] Lee A, Jiang A, Tang M, Seeds A, Liu H 2012 Opt. Express 20 22181
[8] Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Seeds A, Liu H 2014 Electron Lett. 50 1467
[9] Kroemer H 1963 Proc. IEEE 51 1782
[10] Alferov Z I, Kazarinov R 1963 181737
[11] Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quant. Electron. 22 1915
[12] Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[13] Liu G, Stintz A, Li H, Malloy K, Lester L 1999 Electron. Lett. 35 1163
[14] Liu H, Hopkinson M, Harrison C, Steer M, Frith R, Sellers I, Mowbray D, Skolnick M 2003 J. Appl. Phys. 93 2931
[15] Liu H, Sellers I, Badcock T, Mowbray D, Skolnick M, Groom K, Gutierrez M, Hopkinson M, Ng J, David J 2004 Appl. Phys. Lett. 85 704
[16] Liu H, Sellers I, Gutierrez M, Groom K, Soong W, Hopkinson M, David J, Beanland R, Badcock T, Mowbray D 2004 J. Appl. Phys. 96 1988
[17] Sugawara M, Usami M 2009 Nat. Photon. 3 30
[18] Maximov M V, Ledentsov N N 2004 Dekker Encyclopedia Nanosci. Nanotechnol. 3109
[19] Li S, Gong Q, Cao C, Wang X, Yan J, Wang Y, Wang H 2013 Infrared Phys. Technol. 60 216
[20] Dingle R, Henry C H 1976 US3982207A
[21] Hirayama H, Matsunaga K, Asada M, Suematsu Y 1994 Electron Lett. 30 142
[22] Kirstaedter N, Ledentsov N N, Grundmann M, Bimberg D, Ustinov V M, Ruvimov S S, Maximov M V, Kop'ev P S, Alferov Z I, Richter U, Werner P, Gosele U, Heydenreich J 1994 Electron Lett. 30 1416
[23] Wu J, Chen S, Seeds A, Liu H 2015 J. Phys. D 48 363001
[24] van der Ziel J P, Dupuis R D, Logan R A, Pinzone C J 1987 Appl. Phys. Lett. 51 89
[25] Choi H K, Wang C A, Karam N H 1991 Appl. Phys. Lett. 59 2633
[26] Kazi Z I, Thilakan P, Egawa T, Umeno M, Jimbo T 2001 Jpn. J. Appl. Phys. 40 4903
[27] Kazi Z I, Egawa T, Jimbo T, Umeno M 2000 Jpn. J. Appl. Phys. 39 3860
[28] Groenert M E, Pitera A J, Ram R J, Fitzgerald E A 2003 J. Vac. Sci. Technol. B 21 1064
[29] Liu A Y, Herrick R W, Ueda O, Petroff P M, Gossard A C, Bowers J E 2015 IEEE J. Quantum Electron. 21 1900708
[30] Jalali B, Fathpour S 2006 J. Lightwave Techn. 24 4600
[31] Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725
[32] Chen X, Li C, Tsang H K 2011 NPG Asia Materials 3 34
[33] Park H, Fang A W, Kodama S, Bowers J E 2005 Opt. Express 13 9460
[34] Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[35] Liang D, Bowers J E 2010 Nat. Photon. 4 511
[36] Wang W 1984 Appl. Phys. Lett. 44 1149
[37] Fletcher R M, Wagner D K, Ballantyne J M 1984 Appl. Phys. Lett. 44 967
[38] Deppe D, Holonyak J N, Nam D, Hsieh K, Jackson G, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 637
[39] Deppe D, Nam D, Holonyak J N, Hsieh K, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 1271
[40] Kaliski R, Holonyak J N, Hsieh K, Nam D, Lee J, Shichijo H, Burnham R, Epler J, Chung H 1987 Appl. Phys. Lett. 50 836
[41] Hall D, Deppe D, Holonyak J N, Matyi R, Shichijo H, Epler J 1988 J. Appl. Phys. 64 2854
[42] Linder K, Phillips J, Qasaimeh O, Liu X, Krishna S, Bhattacharya P, Jiang J 1999 Appl. Phys. Lett. 74 1355
[43] Kazi Z I, Egawa T, Umeno M, Jimbo T 2001 J. Appl. Phys. 90 5463
[44] Mi Z, Bhattacharya P, Yang J, Pipem K 2005 Electron. Lett. 41 742
[45] Mi Z, Yang J, Bhattacharya P, Huffaker D 2006 Electron. Lett. 42 121
[46] Yang J, Bhattacharya P, Mi Z 2007 IEEE Trans. Electron Devices 54 2849
[47] Yang J, Bhattacharya P, Wu Z 2007 IEEE Photon. Technol. Lett. 19 747
[48] Yang J, Bhattacharya P 2008 Opt. Express 16 5136
[49] Li L, Guimard D, Rajesh M, Arakawa Y 2008 Appl. Phys. Lett. 92 3105
[50] Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349
[51] Liu A Y, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 Appl. Phys. Lett. 104 041104
[52] Liu A Y, Zhang C, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 J. Vac. Sci. Technol. B 32 02C108
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