V掺杂ZnO透明导电薄膜研究

王延峰; 孟旭东; 郑伟; 宋庆功; 翟昌鑫; 郭兵; 张越; 杨富; 南景宇

doi:10.7498/aps.65.087802

摘要

本文分别采用磁控溅射技术与基于密度泛函理论的平面波赝势方法两种方式, 对高价态差元素V掺杂ZnO薄膜进行研究. 实验研究结果表明: V的掺入并未改变ZnO的生长方式, 所制备的薄膜都呈(002)择优生长; 随着衬底温度增加, VZO薄膜的结晶质量逐步改善, 当衬底温度超过280 ℃时薄膜的结晶质量恶化; 在280 ℃时获得的VZO薄膜电阻率最低3.810-3 m, 500-2000 nm平均透过率高于85%. 理论模拟结果表明: V以替位形式掺入ZnO六角纤锌矿晶格结构中, 费米能级进入导带, 材料表现出n 型半导体的特性, 导电电子主要由V 3d及O 2p电子轨道提供. 理论计算结果与实验结果的一致性, 表明VZO薄膜具有作为高效Si基薄膜太阳电池透明导电薄膜的应用潜力.

关键词:

Abstract

The performance of the ZnO film that is an indispensable part of pin-type Si-based thin-film solar cells, plays a crucial role in high-efficiency thin-film solar cells and also forms a significant part in photovoltaic research and development. In this paper, low resistivity and wide broadband spectrum transmittance vanadium (V) doped ZnO (VZO) films are successfully fabricated on Corning XG substrates at various substrate temperatures (STs). The properties of VZO films are investigated by the radio-frequency magnetron sputtering technique and plane wave pseudo-potential method based on the density-functional theory. The experimental results demonstrate that all the VZO flms have (002) preferred orientation with the c-axis perpendicular to the substrate, and the crystalline quality is found to increase with the substrate temperature (ST) rising up to 280 ℃ and decrease when the ST increases further. The optimal VZO film is achieved at 280 ℃ with a resistivity of 3.810-3 cm and an average transmittance of more than 85% in a range of 500-2000 nm. The theoretical result shows that after incorporation of V the Fermi level goes through the conduction band, showing a typical n-type metallic characteristic. The carriers originate from the orbits of V 3d and O 2p. The calculated lattice constants and mobility for VZO film are in agreement well with the experimental results. The consistency of the theoretical results with the experimental results shows that the VZO thin film has a great potential application as a front contact in high-efficiency thin film solar cells.

Keywords:

作者及机构信息

1.
河北北方学院理学院, 河北北方学院新能源科学与技术研究所, 张家口 075000;

2.
中国民航大学理学院, 天津 300300

通信作者: 南景宇, njy1961@163.com

基金项目: 国家自然科学基金青年科学基金 (批准号: 11404088)、河北省自然科学基金 (批准号: F2015405011)、河北省普通高等学校青年拔尖人才项目 (批准号: BJ2014003)、河北省科技攻关项目 (批准号: 11215168)、河北北方学院重大项目(批准号: ZD201401)、河北北方学院博士基金项目、河北北方学院青年项目 (批准号: Q2014001)、河北省教育厅青年基金项目 (批准号: QN2015148) 和张家口市科学技术研究与发展计划自筹经费项目 (批准号: 20131017B) 资助的课题.

Authors and contacts

1.
Institute of New Energy Science and Technology of Hebei North University, College of Science, Hebei North University, Zhangjiakou 075000, China;

2.
College of Science, Civil Aviation University of China, Tianjin 300300, China

Corresponding author: Nan Jing-Yu, njy1961@163.com

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11404088), the Natural Science Foundation of Hebei Province, China (Grant No. F2015405011), the Ordinary University Youth Talent Project of Hebei Province, China (Grant No. BJ2014003), the Science and Technology Support Program of Hebei Province, China (Grant No. 11215168), the Major Projects of Hebei North University, China (Grant No. ZD201401), the Doctoral Scientific Research Foundation of Hebei North University, China, the Youth Fund of Hebei North University, China (Grant No. Q2014001), the Project of the Department of Education of Hebei Province, China (Grant No. QN2015148), and the Science and Technology Research and Development Program Self-Funded Project of Zhangjiakou City of 2013, China (Grant No. 20131017B).

参考文献

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[26]	Wang Y F, Zhang X D, Huang Q, Yang F, Liang J H, Zhang D K, Zhao Y 2014 Vacuum 107 6
[27]	zgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301
[28]	Ellmer K 2000 J. Phys. D: Appl. Phys. 33 R17
[29]	Singh S, Srinivasa R S, Major S S 2007 Thin Solid Films 515 8718
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[31]	Miyata T, Suzuki S, Ishii M, Minami T 2002 Thin Solid Films 411 76
[32]	Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F, Wen L S 2001 J. Appl. Phys. 90 3432
[33]	Desgreniers S 1998 Phys. Rev. B: Condens. Matter 58 14102
[34]	Wang Y F, Huang H Y, Meng X D, Yang F, Nan J Y, Song Q G, Huang Q, Zhao Y, Zhang X D 2015 J. Alloys Compd. 636 102
[35]	Burstein E 1954 Phys. Rev. 93 632
[36]	Moss T S 1954 Proc. Phys. Soc. London, Sect. B 67 775
[37]	Yang P, Gao X H 1981 Journal of Shanxi University (Natural Science Edition) 4 40 (in Chinese) [杨频, 高孝恢 1981 山西大学学报(自然科学版) 4 40]

施引文献

[1]	Minami T 2005 Semicond. Sci. Technol. 20 S35
[2]	Ding L, Fanni L, Messerschmidt D, Zabihzadeh S, Morales M M, Nicolay S, Ballif C 2014 Sol. Energy Mater. Sol. Cells 128 378
[3]	Meier M, Paetzold U W, Prmpers M, Merdzhanova T, Carius R, Gordijn A 2014 Prog. Photovolt: Res. Appl. 22 1226
[4]	Sang B S, Kushiya K, Okumura D, Yamase O 2001 Sol. Energy Mater. Sol. Cells 67 237
[5]	Park H K, Heo J 2014 Appl. Surf. Sci. 309 133
[6]	Park S M, Ikegami T, Ebihara K 2006 Thin Solid Films 513 90
[7]	Huang Q, Zhang D K, Liu B F, Bai L S, Ni J, Zhao Y, Zhang X D 2015 Sol. Energy Mater. Sol. Cells 136 11
[8]	Agashe C, Kluth O, Schpe G, Siekmann H, Hpkes J, Rech B 2003 Thin Solid Films 442 167
[9]	Ma Q B, Ye Z Z, He H P, Luo Y, Zhu L P, Huang J Y, Zhang Y Z, Zhao B H 2008 Chem. Phys. Chem. 9 529
[10]	Meng Y, Yang X L, Chen H X, Shen J, Jiang Y M, Zhang Z J, Hua Z Y 2001 Thin Solid Films 394 219
[11]	Gupta R K, Ghosh K, Mishra S R, Kahol P K 2008 Appl. Surf. Sci. 254 1661
[12]	Zhang C, Chen X L, Wang F, Yan C B, Huang Q, Zhao Y, Zhang X D, Geng X H 2012 Acta Phys. Sin. 61 238101 (in Chinese) [张翅, 陈新亮, 王斐, 闫聪博, 黄茜, 赵颖, 张晓丹, 耿新华 2012 物理学报 61 238101]
[13]	Wu M Y, Yu S H, Chen G H, He L, Yang L, Zhang W F 2015 Appl. Surf. Sci. 324 791
[14]	Cao F, Wand Y D, Liu D L, Yin J Z, Guo B J, Li L, An Y P 2009 Chin. Phys. Lett. 26 034210
[15]	Qadri S B, Kim H, Horwitz J S, Chrisey D B 2000 J. Appl. Phys. 88 6564
[16]	Ngoma B D, Mpahane T, Manyala N, Nemraoui O, Buttner U, Kana J B, Fasasi A Y, Maaza M, Bey A C 2009 Appl. Surf. Sci. 255 4153
[17]	Cao M M, Zhao X R, Duan L B, Liu J R, Guan M M, Guo W R 2014 Chin. Phys. B 23 047805
[18]	Schlenker E, Bakina A, Postelsa B, Mofor A C, Kreyea M, Ronning C, Sievers S, Albrecht M, Siegner U, Kling R, Waag A 2007 Superlattices Microstruct. 42 236
[19]	Wang Y F, Huang Q, Song Q G, Liu Y, Wei C C, Zhao Y, Zhang X D 2012 Acta Phys. Sin. 61 137801 (in Chinese) [王延峰, 黄茜, 宋庆功, 刘阳, 魏长春, 赵颖, 张晓丹 2012 物理学报 61 137801]
[20]	Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhao Y 2013 Acta Phys. Sin. 62 247802 (in Chinese) [王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 物理学报 62 247802]
[21]	Segall M D, Lindan P J D, Probert M J, Pickard C J, Hasnip P J, Clark S J, Payne M C 2002 J. Phys.: Condens. Matter 14 2717
[22]	Perdew J P, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[23]	Vanderbilt D 1990 Phys. Rev. B 41 7892
[24]	Wang Q B, Zhou C, Wu J, L T 2013 Opt. Commun. 297 79
[25]	Sheetz R M, Ponomareva I, Richter E, Andriotis A N, Menon M 2009 Phys. Rev. B 80 195314
[26]	Wang Y F, Zhang X D, Huang Q, Yang F, Liang J H, Zhang D K, Zhao Y 2014 Vacuum 107 6
[27]	zgr , Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301
[28]	Ellmer K 2000 J. Phys. D: Appl. Phys. 33 R17
[29]	Singh S, Srinivasa R S, Major S S 2007 Thin Solid Films 515 8718
[30]	Li X Y, Li H J, Wang Z J, Xia H, Xiong Z Y, Wang J X, Yang B C 2009 Opt. Commun. 282 247
[31]	Miyata T, Suzuki S, Ishii M, Minami T 2002 Thin Solid Films 411 76
[32]	Pei Z L, Sun C, Tan M H, Xiao J Q, Guan D H, Huang R F, Wen L S 2001 J. Appl. Phys. 90 3432
[33]	Desgreniers S 1998 Phys. Rev. B: Condens. Matter 58 14102
[34]	Wang Y F, Huang H Y, Meng X D, Yang F, Nan J Y, Song Q G, Huang Q, Zhao Y, Zhang X D 2015 J. Alloys Compd. 636 102
[35]	Burstein E 1954 Phys. Rev. 93 632
[36]	Moss T S 1954 Proc. Phys. Soc. London, Sect. B 67 775
[37]	Yang P, Gao X H 1981 Journal of Shanxi University (Natural Science Edition) 4 40 (in Chinese) [杨频, 高孝恢 1981 山西大学学报(自然科学版) 4 40]

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