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低能氩离子束轰击并后退火处理的离子束表面改性，会影响高温超导薄膜的表面结构和超导特性，但是其中的深刻微观机理不清楚.本文通过连续改变离子束轰击时间，系统研究了离子束表面改性对于超导膜结构和临界电流密度的影响.通过扫描电子显微镜、X射线衍射、Jc-scanning测试表征样品的结构特性和超导特性，并得出内应变、氧空位缺陷等参量.研究表明，经过表面改性的钇钡铜氧（YBa2Cu3O7-，YBCO）薄膜，随轰击时间增加表面形貌会变得更加均匀致密，a轴晶粒消失，并且临界电流密度有了显著的提高.由化学键收缩配对模型分析得出，临界电流密度的提高与薄膜内应变增大和引发的局部YBCO结构中CuO键收缩有关.The interaction between ion beam and solid target is widely used in material modification. For the high temperature superconducting thin film modification, however, earlier experiments show that the samples are accompanied by the degradation in superconducting properties due to the structural damage of materials. In order to improve surface morphologies and superconducting properties of YBa2Cu3O7- (YBCO) thin films, we introduce a new ion beam structure modification (ISM) method. Although the ion bombardment time parameter effect is not clear, the related mechanism should be clarified. In this paper, the bombardment processes with duration times of 8 min, 10 min and 12 min are investigated in a vacuum chamber with an Ar+ Kaufman ion source, and the direction between the incident ion beam and the normal of sample is fixed at a certain angle. Surface morphologies and the microstructures of YBCO samples are characterized by scanning electron micrographs and X-ray diffraction patterns, respectively. In the respect of superconducting properties, the critical current density Jc is measured by Jc-scanning test. The results indicate that the needle-like a-axis grains and pores disappear gradually with the increase of the ion bombardment time. In order to characterize the effects of ion beam bombardment time on the internal strain in YBCO thin films, the relationship between the full width at half maximum and the Bragg diffraction angle of YBCO (00l) peak is studied by the William-Hall equation. The results show that the internal strain in YBCO thin film increases with increasing the ion beam bombardment time. At the same time, the critical current density Jc value of the sample after ISM processing increases, which is more than 2.2 times higher than that of the initial sample. The main reason for the increases of critical current density Jc in YBCO thin film is due to the drastic shrink of CuO bond caused by the increasing internal strain. Based on the bond contraction pair theory, the shrink of CuO bond improves the energy to break Cooper-pairs, and then increases the current carrying capacity of high temperature superconducting YBCO thin film, especially in copper-oxygen (CuO2) plane. The ISM process might be a useful method of markedly improving the surface morphology, meanwhile, the critical current density Jc value also increases in high temperature superconducting YBCO thin film.
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Keywords:
- YBa2Cu3O7- /
- ion beam surface modification /
- critical current density /
- bond contraction pair model
[1] Wesch W, Wendlers E 2016 Ion Beam Modification of Solids Ion-Solid Interaction and Radiation Damage (Vol. 61) (Switzerland: Springer)
[2] Was G S 2017 Fundamentals of Radiation Materials Science Metals and Alloys (Vol. 2) (Berlin: Springer)
[3] Cybart S A, Bali R, Hlawacek G, Rder F, Fassbender J 2016 Focused Helium and Neon Ion Beam Modification of High-Tm C Superconductors and Magnetic Materials In: Hlawacek G, Glzhuser A (eds) Helium Ion Microscopy (Switzerland: Springer) p415
[4] Grove W R 1853 Philos. Mag. Ser. 4 5 203
[5] Castro M, Cuerno R, Vzquez L, Gago R 2005 Phys. Rev. Lett. 94 016102
[6] Szabo O, Flickyngerova S, Tvarozek V, Novotny I 2014 Proc. 29th International Conference on Microelectronics (MIEL 2014) Belgrade, Serbia May 12-14, 2014 p245
[7] Krger H, Reinke P, Bttner M, Oelhafen P 2005 J. Chem. Phys. 123 114706
[8] Wang S S, Zhang Y, Zhang Z L, Jiang W, Li F, Chen Z Y 2017 J. Magn. Magn. Mater. 444 291
[9] Hebard A F, Fleming R M, Short K T, White A E, Rice C E, Levi A F J, Eick R H 1989 Appl. Phys. Lett. 55 1915
[10] Sun Z Y, Wang S S, Wu K, Liu Q, Han Z 2004 Physica C 412-414 1331
[11] Zhao B, Sun Z Y, Shi K, Yang J, Sun Y P, Han Z H 2003 Physica C 386 342
[12] Dawley J T, Clem P G, Siegal M P, Tallant D R, Overmyer D L 2002 J. Mater. Res. 17 1900
[13] Vermeir P, Feys J, Schaubroeck J, Verbeken K, Bcker M, van Driessche I 2012 Mater. Chem. Phys. 133 998
[14] Hanley L, Sinnott S B 2002 Sur. Sci. 500 500
[15] Biswal R, John J, Mallick P, Dash B N, Kulriya P K, Avasthi D K, Kanjilal D, Behera D, Mohanty T, Raychaudhuri P, Mishra N C 2009 J. Appl. Phys. 106 053912
[16] Jiang H G, Rhle M, Lavernia E J 1999 J. Mater. Res. 14 549
[17] Benzi P, Bottizzo E, Rizzi N 2004 J. Cryst. Growth 269 625
[18] Deutscher G, de Gennes P G 2007 C. R. Phys. 8 937
[19] Deutscher G 2010 Appl. Phys. Lett. 96 122502
[20] Deutscher G 2012 J. Appl. Phys. 111 112603
[21] Llordes A, Palau A, Gzquez J, Coll M, Vlad R, Pomar A, Arbiol J, Guzmn R, Ye S, Rouco V, Sandiumenge F, Ricart S, Puig T, Varela M, Chateigner D, Vanacken J, Gutirrez J, Moshchalkov V, Deutscher G, Magen C, Obradors X 2012 Nat. Mater. 11 329
[22] Wrdenweber R 1999 Supercond. Sci. Technol. 12 R86
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[1] Wesch W, Wendlers E 2016 Ion Beam Modification of Solids Ion-Solid Interaction and Radiation Damage (Vol. 61) (Switzerland: Springer)
[2] Was G S 2017 Fundamentals of Radiation Materials Science Metals and Alloys (Vol. 2) (Berlin: Springer)
[3] Cybart S A, Bali R, Hlawacek G, Rder F, Fassbender J 2016 Focused Helium and Neon Ion Beam Modification of High-Tm C Superconductors and Magnetic Materials In: Hlawacek G, Glzhuser A (eds) Helium Ion Microscopy (Switzerland: Springer) p415
[4] Grove W R 1853 Philos. Mag. Ser. 4 5 203
[5] Castro M, Cuerno R, Vzquez L, Gago R 2005 Phys. Rev. Lett. 94 016102
[6] Szabo O, Flickyngerova S, Tvarozek V, Novotny I 2014 Proc. 29th International Conference on Microelectronics (MIEL 2014) Belgrade, Serbia May 12-14, 2014 p245
[7] Krger H, Reinke P, Bttner M, Oelhafen P 2005 J. Chem. Phys. 123 114706
[8] Wang S S, Zhang Y, Zhang Z L, Jiang W, Li F, Chen Z Y 2017 J. Magn. Magn. Mater. 444 291
[9] Hebard A F, Fleming R M, Short K T, White A E, Rice C E, Levi A F J, Eick R H 1989 Appl. Phys. Lett. 55 1915
[10] Sun Z Y, Wang S S, Wu K, Liu Q, Han Z 2004 Physica C 412-414 1331
[11] Zhao B, Sun Z Y, Shi K, Yang J, Sun Y P, Han Z H 2003 Physica C 386 342
[12] Dawley J T, Clem P G, Siegal M P, Tallant D R, Overmyer D L 2002 J. Mater. Res. 17 1900
[13] Vermeir P, Feys J, Schaubroeck J, Verbeken K, Bcker M, van Driessche I 2012 Mater. Chem. Phys. 133 998
[14] Hanley L, Sinnott S B 2002 Sur. Sci. 500 500
[15] Biswal R, John J, Mallick P, Dash B N, Kulriya P K, Avasthi D K, Kanjilal D, Behera D, Mohanty T, Raychaudhuri P, Mishra N C 2009 J. Appl. Phys. 106 053912
[16] Jiang H G, Rhle M, Lavernia E J 1999 J. Mater. Res. 14 549
[17] Benzi P, Bottizzo E, Rizzi N 2004 J. Cryst. Growth 269 625
[18] Deutscher G, de Gennes P G 2007 C. R. Phys. 8 937
[19] Deutscher G 2010 Appl. Phys. Lett. 96 122502
[20] Deutscher G 2012 J. Appl. Phys. 111 112603
[21] Llordes A, Palau A, Gzquez J, Coll M, Vlad R, Pomar A, Arbiol J, Guzmn R, Ye S, Rouco V, Sandiumenge F, Ricart S, Puig T, Varela M, Chateigner D, Vanacken J, Gutirrez J, Moshchalkov V, Deutscher G, Magen C, Obradors X 2012 Nat. Mater. 11 329
[22] Wrdenweber R 1999 Supercond. Sci. Technol. 12 R86
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