纳米材料及HfO2基存储器件的原位电子显微学研究

李超; 姚湲; 杨阳; 沈希; 高滨; 霍宗亮; 康晋锋; 刘明; 禹日成

doi:10.7498/aps.67.20180731

摘要

总结了我们将原位技术和透射电子显微学分析方法相结合，针对纳米材料和器件的结构、形貌、成分以及电势分布等物理性质的动态行为所开展的综合物性表征和分析工作.主要成果有：揭示了C60纳米晶须在焦耳热作用下的结构相变路径；观察到了电荷俘获存储器中的电荷存储位置以及栅极电压诱导的氧空位缺陷；研究了阻变存储器中氧空位通道的形成过程以及导电通道的开关机理.这些成果不但有助于深入理解纳米材料和器件相关功能的物理机理，改善其工作性能，更展示了透射电子显微学在微电子领域强大的研究能力.

关键词:

Abstract

Advanced transmission electron microscopy combined with in situ techniques provides powerful ability to characterize the dynamic behaviors of phase transitions, composition changes and potential variations in the nanomaterials and devices under external electric field. In this paper, we review some important progress, in this field, of the explanation of structural transition path caused by the Joule heating in C60 nanowhikers, the clarification of electron storage position in charge trapping memory and the direct evidences of the oxygen vacancy channel and the conductive filament formation in resistive random access memory. These studies could improve an understanding of the basic mechanism of nanomaterial and device performance, and also demonstrate the diversity of the functions of transmission electron microscopy in microelectronic field.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家研究中心, 先进材料与结构分析实验室, 北京 100190;

2.
中国科学院大学物理科学学院, 北京 100049;

3.
北京大学信息科学技术学院, 北京 100871;

4.
中国科学院微电子研究所, 微电子器件与集成技术重点实验室, 北京 100029

通信作者: 康晋锋, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn ; 刘明, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn ; 禹日成, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn

基金项目: 国家重点研发计划（批准号：2016YFA0300701）、国家重点基础研究发展计划（批准号：2013CB932904，2012CB932302，2010CB934202）和国家自然科学基金（批准号：11374343，61421005，11574376，11174336，61334007，10974235，11274365）资助的课题.

Authors and contacts

1.
Laboratory of Advanced Materials and Electron Microscopy, Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;

3.
School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;

4.
Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Corresponding author: Kang Jin-Feng, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn ; Liu Ming, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn ; Yu Ri-Cheng, rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn

Funds: Project supported by the National Key RD Program of China (Grant No. 2016YFA0300701), the National Basic Research Program of China (Grant Nos. 2013CB932904, 2012CB932302, 2010CB934202), and the National Natural Science Foundation of China (Grant Nos. 11374343, 61421005, 11574376, 11174336, 61334007, 10974235, 11274365).

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[51]	Liu Q, Long S B, L H B, Wang W, Niu J B, Huo Z L, Chen J N, Liu M 2010 ACS Nano 4 6162
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[53]	Celano U, Goux L, Degraeve R, Fantini A, Richard O, Bender H, Jurczak M, Vandervorst W 2015 Nano Lett. 15 7970
[54]	Liu Q, Sun J, L H B, Long S B, Yin K B, Wan N, Li Y T, Sun L T, Liu M 2012 Adv. Mater. 24 1844
[55]	Celano U, Goux L, Belmonte A, Opsomer K, Franquet A, Schulze A, Detavernier C, Richard O, Bender H, Jurczak M, Vandervorst W 2014 Nano Lett. 14 2401
[56]	Chen J Y, Huang C W, Chiu C H, Huang Y T, Wu W W 2015 Adv. Mater. 27 5028
[57]	Park G S, Kim Y B, Park S Y, Li X S, Heo S, Lee M J, Chang M, Kwon J H, Kim M, Chung U I, Dittmann R, Waser R, Kim K 2013 Nature Commun. 4 2382
[58]	Miao F, Strachan J P, Yang J J, Zhang M X, Goldfarb I, Torrezan A C, Eschbach P, Kelley R D, Ribeiro G M, Williams R S 2011 Adv. Mater. 23 5633
[59]	Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671
[60]	Yang Y C, Gao P, Gaba S, Chang T, Pan X Q, Lu W 2012 Nature Commun. 3 732
[61]	Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[62]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[63]	Yang Y, L W, Yao Y, Sun J, Gu C, Gu L, Wang Y, Duan X, Yu R 2014 Sci. Rep. 4 3890
[64]	Li C, Gao B, Yao Y, Guan X X, Shen X, Wang Y G, Huang P, Liu L F, Liu X Y, Li J J, Gu C Z, Kang J F, Yu R C 2017 Adv. Mater. 29 1602976

施引文献

[1]	Xu T, Sun L T 2015 Small 11 3247
[2]	Hofmann S, Sharma R, Wirth C T, Sodi F C, Ducati C, Kasama T, Borkowski R E D, Drucker J, Bennett P, Robertson J 2008 Nature Mater. 7 372
[3]	Kodambaka S, Tersoff J, Reuter M C, Ross F M 2007 Science 316 729
[4]	Wang L H, Teng J, Liu P, Hirata A, Ma E, Zhang Z, Chen M W, Han X D 2014 Nat. Commun. 5 4402
[5]	Hannon J B, Kodambaka S, Ross F M, Tromp R M 2006 Nature 440 69
[6]	Ross F M, Tersoff J, Reuter M C 2005 Phys. Rev. Lett. 95 146104
[7]	Wang L H, Han X D, Liu P, Yue Y H, Zhang Z, Ma E 2010 Phys. Rev. Lett. 105 135501
[8]	Gamalski A D, Ducati C, Hofmann S J 2011 Phys. Chem. C 115 4413
[9]	Huang J Y, Chen S, Wang Z Q, Kempa K, Wang Y M, Jo S H, Chen G, Dresselhaus M S, Ren Z F 2006 Nature 439 281
[10]	Poncharal P, Wang Z L, Ugarte D, de Heer W A 1999 Science 283 1513
[11]	Filleter T, Bernal R, Li S, Espinosa H D 2011 Adv. Mater. 23 2855
[12]	Han X D, Wang L H, Yue Y H, Zhang Z 2015 Ultramicroscopy 151 94
[13]	Huang J Y, Zhong L, Wang C M, Sullivan J P, Xu W, Zhang L Q, Mao S X, Hudak N S, Liu X H, Subramanian A, Fan H Y, Qi L A, Kushima A, Li J 2010 Science 330 1515
[14]	Zhu C Y, Xu F, Min H H, Huang Y, Xia W W, Wang Y T, Xu Q Y, Gao P, Sun L T 2017 Adv. Funct. Mater. 27 1606163
[15]	Cha D, Ahn S J, Park S Y, Horii H, Kim D H, Kim Y K, Park S O, Jung U I, Kim M J, Kim J 2009 2009 Symposium on VLSI Technology Honolulu, USA, June 16-18, 2009 p204
[16]	Kwon D K, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotechnol. 5 148
[17]	Lehmann M, Lichte H 2002 Microsc. Microanal. 8 447
[18]	Li H Y, Tee B C K, Cha J J, Cui Y, Chung J W, Lee S Y, Bao Z N 2012 J. Am. Chem. Soc. 134 2760
[19]	Makarova T L 2001 Semiconductors 35 243
[20]	Dekker C 1999 Phys. Today 52 22
[21]	Ogawa K, Kato T, Ikegami A, Tsuji H, Aoki N, Ochiai Y, Bird J P 2006 Appl. Phys. Lett. 88 112109
[22]	Nigam A, Schwabegger G, Ulla M, Ahmed R, Fishchuk I I, Kadashchuk A, Simbrunner C, Sitter H, Premaratne M, Rao V R 2012 Appl. Phys. Lett. 101 083305
[23]	Xing Y J, Jing G Y, Xu J, Yu D P, Liu H B, Li Y L 2005 Appl. Phys. Lett. 87 263117
[24]	Mikawa M, Kato H, Okumura M, Narazaki M, Kanazawa Y, Miwa N, Shinohara H 2001 Bioconjugate Chem. 12 510
[25]	Yoo C S, Nellis W J 1991 Science 254 1489
[26]	Minato J, Miyazawa K 2006 Diamond Relat. Mater. 15 1151
[27]	Liu H, Li Y, Jiang L, Luo H, Xiao S, Fang H, Li H, Zhu D, Yu D, Xu J, Xiang B 2002 J. Am. Chem. Soc. 124 13370
[28]	Minato J I, Miyazawa K, Suga T 2005 Sci. Technol. Adv. Mat. 6 272
[29]	Asaka K, Nakayama T, Miyazawa K, Saito Y 2012 Carbon 50 1209
[30]	Yang Y, Niu N N, Li C, Yao Y, Piao G Z, Yu R C 2012 Nanoscale 4 7460
[31]	Li C, Wang B Z, Yao Y, Piao G Z, Gu L, Wang Y G, Duan X F, Yu R C 2014 Nanoscale 6 6585
[32]	Wang L, Liu B B, Li H, Yang W G, Ding Y, Sinogeikin S V, Meng Y, Liu Z X, Zeng X C, Mao W L 2012 Science 337 825
[33]	Baik S J, Lim K S 2011 2011 IEEE International Reliability Physics Symposium (IRPS) Monterey, USA, April 10-14, 2011 p6B.4.1
[34]	Lwin Z Z, Pey K L, Liu C, Liu Q, Zhang Q, Chen Y N, Singh P K, Mahapatra S 2011 Appl. Phys. Lett. 99 222102
[35]	Zhu C X, Xu Z G, Huo Z L, Yang R, Zheng Z W, Cui Y X, Liu J, Wang Y M, Shi D X, Zhang G Y, Li F H, Liu M 2011 Appl. Phys. Lett. 99 223504
[36]	Lin Z, Bremond G, Bassani F 2011 Nanoscale Res. Lett. 6 163
[37]	Fiorenza P, Polspoel W, Vandervorst W 2006 Appl. Phys. Lett. 88 222104
[38]	Yao Y, Li C, Huo Z L, Liu M, Zhu C X, Gu C Z, Duan X F, Wang Y G, Gu L, Yu R C 2013 Nature Commun. 4 2764
[39]	Jeno C S, Ranganath T R, Jones H S, Chang T T L 1981 IEDM 27 388
[40]	Liang M S, Chang C, Tong Y, Hu C, Brodersen R W 1984 IEEE Trans. Electron Dev. 31 1238
[41]	Shibuya K, Dittmann R, Mi S, Waser R 2010 Adv. Mater. 22 411
[42]	Dimaria D J, Cartier E, Arnold D 1993 J. Appl. Phys. 73 3367
[43]	Su J, Wu E Y 2004 Phys. Rev. Lett. 92 087601
[44]	Xiong K, Robertson J 2005 Microelectron. Eng. 80 408
[45]	Onishi K, Choi R, Kang C S, Cho H J, Kim Y H, Nich R E, Han J, Krishnan S A, Akbar M S, Lee J C 2003 IEEE Trans. Electron Dev. 50 1517
[46]	Houssa M, Pantisano L, Ragnarsson L , Degraeve R, Schram T, Pourtois G, Gendt S D, Groeseneken G, Heyns M M 2006 Mater. Sci. Eng. R 51 37
[47]	Zafar S, Kumar A, Gusev E, Cartier E 2005 IEEE Trans. Device Mat. Re. 5 45
[48]	Valov I, Linn E, Tappertzhofen S, Schmelzer S, van den Hurk J, Lentz F, Waser R 2013 Nat. Commun. 4 1771
[49]	Jang J H, Jung H S, Kim J H, Lee S Y, Hwang C S, Kim M 2011 J. Appl. Phys. 109 023718
[50]	Li C, Yao Y, Shen X, Wang Y G, Li J J, Gu C Z, Yu R C, Liu Q, Liu M 2015 Nano Res. 8 3571
[51]	Liu Q, Long S B, L H B, Wang W, Niu J B, Huo Z L, Chen J N, Liu M 2010 ACS Nano 4 6162
[52]	Tian H, Chen H Y, Gao B, Yu S M, Liang J L, Yang Y, Xie D, Kang J F, Ren T L, Zhang Y G, Wong H S P 2013 Nano Lett. 13 651
[53]	Celano U, Goux L, Degraeve R, Fantini A, Richard O, Bender H, Jurczak M, Vandervorst W 2015 Nano Lett. 15 7970
[54]	Liu Q, Sun J, L H B, Long S B, Yin K B, Wan N, Li Y T, Sun L T, Liu M 2012 Adv. Mater. 24 1844
[55]	Celano U, Goux L, Belmonte A, Opsomer K, Franquet A, Schulze A, Detavernier C, Richard O, Bender H, Jurczak M, Vandervorst W 2014 Nano Lett. 14 2401
[56]	Chen J Y, Huang C W, Chiu C H, Huang Y T, Wu W W 2015 Adv. Mater. 27 5028
[57]	Park G S, Kim Y B, Park S Y, Li X S, Heo S, Lee M J, Chang M, Kwon J H, Kim M, Chung U I, Dittmann R, Waser R, Kim K 2013 Nature Commun. 4 2382
[58]	Miao F, Strachan J P, Yang J J, Zhang M X, Goldfarb I, Torrezan A C, Eschbach P, Kelley R D, Ribeiro G M, Williams R S 2011 Adv. Mater. 23 5633
[59]	Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671
[60]	Yang Y C, Gao P, Gaba S, Chang T, Pan X Q, Lu W 2012 Nature Commun. 3 732
[61]	Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[62]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[63]	Yang Y, L W, Yao Y, Sun J, Gu C, Gu L, Wang Y, Duan X, Yu R 2014 Sci. Rep. 4 3890
[64]	Li C, Gao B, Yao Y, Guan X X, Shen X, Wang Y G, Huang P, Liu L F, Liu X Y, Li J J, Gu C Z, Kang J F, Yu R C 2017 Adv. Mater. 29 1602976

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