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The magnetoelectric (ME) heterostructure is composed of ferromagnetic and ferroelectric materials. The heterostructural ME effect originates from piezoelectric effect in the ferroelectric component and magnetostrictive effect in the ferromagnetic component. The magnetoelectric heterostructure has higher magnetoelectric coupling coefficient and lower dielectric loss than the particulate composites, and thus leading to several promising applications such as in the magnetic field sensors, the energy harvesters, antenna and memory devices. In this paper, we review the recent research progress in ME heterostructure for device applications, and present a development course of ME heterostructure. Finally, we also summarize the challenges of developing the ME heterostructure and point out its perspectives.
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Keywords:
- magnetoelectric effect /
- magnetoelectric heterostructure /
- magnetic sensor /
- magnetic device
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[1] Dong S, Liu J M 2010 Physics 39 714 (in Chinese) [董帅, 刘俊明 2010 物理 39 714]
[2] Li X G, Xu X Q, Qian T 2005 J. Sichuan Univ. (Nat. Sci. Ed.) 42 43 (in Chinese) [李晓光, 许雪芹, 钱天 2005 四川大学学报(自然科学版) 42 43]
[3] Dong S, Xiang H J 2014 Physics 43 173 (in Chinese) [董帅, 向红军 2014 物理 43 173]
[4] Yu P, Zhang J X 2013 Prog. Phys. 33 369 (in Chinese) [于浦, 张金星 2013 物理学进展 33 369]
[5] Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[6] Jin J Z, Lu S G, Chanthad C, Zhang Q M, Hague M A, Wang Q 2011 Adv. Mater. 23 3853
[7] van Run A M J G, Terrell D R, Scholing J H 1974 J. Mater. Sci. 9 1710
[8] Benveniste Y 1995 Phys. Rev. B 51 16424
[9] Nan C W 1994 Phys. Rev. B 50 6082
[10] Srinivasan G, Rasmussen E T, Gallegos J, Srinivasan R, Bokhan Y I, Laletin V M 2001 Phys. Rev. B 64 214408
[11] Zhou J P, Shi Z, Liu G, He H C, Nan C W 2006 Acta Phys. Sin. 55 3766 (in Chinese) [周剑平, 施展, 刘刚, 何泓材, 南策文 2006 物理学报 55 3766]
[12] Fiebig M 2005 J. Phys. D: Appl. Phys. 38 R123
[13] Priya S, Islam R, Dong S X, Viehland D 2007 J. Electroceram. 19 147
[14] Ryu J, Carazo A V, Uchino K, Kim H E 2001 Jpn. J. Appl. Phys. Part 1 40 4948
[15] Ryu J, Priya S, Uchino K, Kim H E 2002 J. Electroceram. 8 107
[16] Wang Y J, Gray D, Berry D, Gao J Q, Li M H, Li J F, Viehland D 2011 Adv. Mater. 23 4111
[17] Zhang Y, Gao Y J, Hu C, Tan X Y, Qiu D, Zhang T T, Zhu Y D, Li M Y 2016 Acta Phys. Sin. 65 167501 (in Chinese) [张源, 高雁军, 胡诚, 谭兴毅, 邱达, 张婷婷, 朱永丹, 李美亚 2016 物理学报 65 167501]
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[29] Hasanyan D, Gao J, Wang Y, Viswan R, Li M, Shen Y, Li J, Viehland D 2012 J. Appl. Phys. 112 013908
[30] Dong S X, Li J F, Viehland D 2004 J. Appl. Phys. 96 3382
[31] Gao J Q, Shen Y, Wang Y J, Finkel P, Li J F, Viehland D 2011 IEEE Trans. Ultrason. Ferr. 58 1545
[32] Petrov V M, Srinivasan G, Bichurin M I, Galkina T A 2009 J. Appl. Phys. 105 063911
[33] Wang Y J, Or S W, Chan H L W, Zhao X Y, Luo H S 2008 J. Appl. Phys. 103 124511
[34] Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 5305
[35] Jia Y M, Luo H S, Zhao X Y, Wang F F 2008 Adv. Mater. 20 4776
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[37] Wang Y J, Gray D, Berry D, Gao J Q, Li J F, Viehland D, Luo H S 2011 Phys. Status Solidi R 5 232
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[44] Palneedi H, Maurya D, Geng L D, Song H C, Hwang G T, Peddigari M, Annapureddy V, Song K, Oh Y S, Yang S C, Wang Y U, Priya S, Ryu J 2018 ACS Appl. Mater. Inte. 10 11018
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[47] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
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[62] Palneedi H, Annapureddy V, Priya S, Ryu J 2016 Actuators 5 9
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