中远红外非线性光学晶体研究进展

贾宁; 王善朋; 陶绪堂

doi:10.7498/aps.67.20181591

摘要

3–5 μm和8–12 μm波段中远红外激光，在国防和民用领域均具有广泛的应用.作为全固态激光频率转换系统的核心部件，非线性光学晶体需要不断地优化和发展.本文从红外非线性光学晶体材料组成角度出发，总结了几种具有重大应用前景的磷族化合物（ZnGeP₂，CdSiP₂）、硫属化合物（CdSe，GaSe，LiInS₂系列，BaGa₄S₇系列）以及准位相匹配晶体（OP-GaAs，OP-GaP）等中远红外波段非线性光学晶体的研究进展.

关键词:

Abstract

High-power tunable mid-infrared (MIR) and far-infrared (FIR) lasers in a range of 3-20 μm, especially in the atmospheric windows of 3-5 μm and 8-12 μm are essential for the applications, such as in remote sensing, minimally invasive surgery, telecommunication, national security, etc. At present, the technology of MIR and FIR laser have become a research hotspot. As the core component of all-solid-state laser frequency conversion system, nonlinear optical (NLO) crystals for coherent MIR and FIR laser are urgently needed by continuously optimizing and developing. However, compared with several outstanding near infrared, visible, and ultraviolet NLO crystals, such as β-BaB₂O₄, LiB₃O₅, LiNbO₃, KTiOPO₄, and KBe₂BO₃F₂, the generation of currently available NLO crystals for 3-20 μm laser is still underdeveloped. Traditional NLO oxide crystals are limited to output wavelengths ≤ 4 μm due to the multi-phonon absorption. In the past decades, the chalcopyrite-type AgGaS₂, AgGaSe₂ and ZnGeP₂ have become three main commercial crystals in the MIR region due to their high second-harmonic generation coefficients and wide IR transparency ranges. Up to now, ZnGeP₂ is still the state-of-the-art crystal for high energy and high average power output in a range of 3-8 μm. Unfortunately, there are still some intrinsic drawbacks that hinder their applications, such as in poor thermal conductivity and low laser damage threshold for AgGaS₂, non-phase-matching at 1.06 μm pumping for AgGaSe₂, and harmful two-photon absorption at 1.06 μm for ZnGeP₂. In addition, ZnGeP₂ has significant multi-phonon absorption in an 8-12 μm band, which restricts its applications in long wavelength MIR. With the development of research, several novel birefringent crystals, as well as all-epitaxial processing of orientation-patterned semiconductors GaAs (OP-GaAs) and GaP (OP-GaP), have been explored together with attractive properties, such as large NLO effect, wide transparency ranges, and high resistance to laser damage.
In this paper, from the angle of the compositions of NLO crystal materials, several kinds of phosphide crystals (ZnGeP₂ CdSiP₂) and chalcogenide crystals (CdSe, GaSe, LiInS₂ series, and BaGa₄S₇ series) are summarized. In addition, the latest achievements of the orientation-patterned materials such as OP-GaAs and OP-GaP are also reviewed systematically. In summary, we review the above-mentioned attractive properties of these materials such as in the unique capabilities, the crystal growth, and the output power in the MIR and FIR region.

Keywords:

作者及机构信息

山东大学晶体材料研究所, 晶体材料国家重点实验室, 济南 250100

Authors and contacts

State Key Laboratory of Crystal Materials, Institute of Crystal Materials Shandong University, Jinan 250100, China

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施引文献

[1]	Schunemann P G, Zawilski K T, Pomeranz L A, Creeden D J, Budni P A 2016 J. Opt. Soc. Am. B 33 D36
[2]	Lan H, Liang F, Jiang X, Zhang C, Yu H, Lin Z, Zhang H, Wang J, Wu Y 2018 J. Am. Chem. Soc. 140 4684
[3]	Liu T, Qin J, Zhang G, Zhu T, Niu F, Wu Y, Chen C 2008 Appl. Phys. Lett. 93 091102
[4]	Zhang G, Qin J, Liu T, Li Y, Wu Y, Chen C 2009 Appl. Phys. Lett. 95 261104
[5]	Ye N, Tu C, Long X, Hong M 2010 Cryst. Growth Des. 10 4672
[6]	Liang F, Kang L, Lin Z, Wu Y 2017 Cryst. Growth Des. 17 2254
[7]	Isaenko L I, Yelisseyev A P 2016 Semicond. Sci. Technol. 31 123001
[8]	Wu H, Wang Z, Ni Y, Mao M, Huang C, Cheng X 2012 J. Cryst. Growth 353 158
[9]	Schunemann P G, Pollak T M 1997 J. Cryst. Growth 174 272
[10]	Zhang G, Tao X, Ruan H, Wang S, Shi Q 2012 J. Cryst. Growth 340 197
[11]	Isaenko L, Yelisseyev A, Lobanov S, Petrov V, Rotermund F, Zondy J J, Knippels G H M 2001 Mater. Sci. Semicond. Processing 4 665
[12]	Petrov V, Zondy J J, Bidault O, Isaenko L, Vedenyapin V, Yelisseyev A. Chen W D, Tyazhev A, Lobanov S, Marchev G, Kolker D 2010 J. Opt. Soc. Am. B 27 1902
[13]	Guo Y F, Zhou Y Q, Lin X S, Chen W D, Ye N 2014 Opt. Mater. 36 2007
[14]	Yao J, Yin W, Feng K, Li X, Mei D, Lu Q, Ni Y, Zhang Z, Hu Z, Wu Y 2012 J. Cryst. Growth 346 1
[15]	Li G, Chu Y, Zhou Z 2018 Chem. Mater. 30 602
[16]	Hanna D C, Rampal V V, Smith R C 1973 Opt. Commun. 8 151
[17]	Boyd G, Kasper H, McFee J 1971 IEEE J. Quantum Electron. 7 563
[18]	Singh N B, Hopkins R H, Feichtner J D 1986 J. Mater. Sci. 21 837
[19]	Buehler E, Wernick J H, Wiley J D 1973 J. Electron. Mater. 2 445
[20]	Bliss D F, Harris M, Horrigan J, Higgins W M, Armington A F, Adamski J A 1994 J. Cryst. Growth 137 145
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[22]	Zhang G, Tao X, Wang S, Liu G, Shi Q, Jiang M 2011 J. Cryst. Growth 318 717
[23]	Lei Z, Okunev A O, Zhu C, Verozubova G A, Ma T, Yang A C 2016 J. Cryst. Growth 450 34
[24]	Zhong K, Li J S, Xu D G, Wang J L, Wang Z, Wang P, Yao J Q 2010 Optoelectron. Lett. 6 179
[25]	Zawilski K T, Schunemann P G, Setzler S D, Pollak T M 2008 J. Cryst. Growth 310 1891
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[34]	Zawilski K T, Schunemann P G, Pollak T C, Zelmon D E, Fernelius N C, Kenneth Hopkins F 2010 J. Cryst. Growth 312 1127
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[36]	Fan L, Zhu S, Zhao B, Chen B, He Z, Yang H, Liu G, Wang X 2013 J. Cryst. Growth 364 62
[37]	He Z, Zhao B, Zhu S, Chen B, Huang W, Lin L, Feng B 2018 J. Cryst. Growth 481 29
[38]	Peremans A, Lis D, Cecchet F, Schunemann P G, Zawilski K T, Petrov V 2009 Opt. Lett. 34 3053
[39]	Kumar S C, Agnesi A, Dallocchio P, Pirzio F, Reali G, Zawilski K T, Schunemann P G, Ebrahim-Zadeh M 2011 Opt. Lett. 36 3236
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[43]	Isaenko L, Vasilyeva I, Yelisseyev A, Lobanov S, Malakhov V, Dovlitova L, Zondy J J, Kavun I 2000 J. Cryst. Growth 218 313
[44]	Wang S, Gao Z, Zhang X, Zhang X, Li C, Dong C, Lu Q, Zhao M, Tao X 2014 Cryst. Growth Des. 14 5957
[45]	Beutler M, Rimke I, Büttner E, Petrov V, Isaenko L 2014 Opt. Lett. 39 4353
[46]	Isaenko L, Yelisseyev A, Lobanov S, Petrov V, Rotermund F, Slekys G, Zondy J J 2002 J. Appl. Phys. 91 9475
[47]	Tupitsyn E, Bhattacharya P, Rowe E, Matei L, Cui Y, Buliga V, Groza M, Wiggins B, Burger A, Stowe A 2014 J. Cryst. Growth 393 23
[48]	Wang S, Zhang X, Zhang X, Li C, Gao Z, Lu Q, Tao X 2014 J. Cryst. Growth 401 150
[49]	Jia N, Wang S, Gao Z, Wu Q, Li C, Zhang X, Yu T, Lu Q, Tao X 2017 Cryst. Growth Des. 17 5875
[50]	Ma T, Zhu C, Lei Z, Yang C, Sun L, Zhang H 2015 J. Cryst. Growth 415 132
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[53]	Dai S, Jia N, Chen J, Shen Y, Yang S, Li Y, Liu Q, Yang F, Zong N, Wang Z, Zhang F, Cui D, Peng Q, Wang S, Tao X, Xu Z 2017 Opt. Express 25 12860
[54]	Lin X, Zhang G, Ye N 2009 Cryst. Growth Des. 9 1186
[55]	Yao J, Mei D, Bai L, Lin Z, Yin W, Fu P, Wu Y 2010 Inorg. Chem. 49 9212
[56]	Badikov V, Badikov D, Shevyrdyaeva G, Tyazhev A, Marchev G, Panyutin V, Petrov V, Kwasniewski A 2011 Phys. Status Solidi RRL 5 31
[57]	Tyazhev A, Kolker D, Marchev G, Badikov V, Badikov D, Shevyrdyaeva G, Panyutin V, Petrov V 2012 Opt. Lett. 37 4146
[58]	Kato K, Okamoto T, Mikami T, Petrov V, Badikov V, Badikov D, Panyutin V 2013 Proc. SPIE 8604 860416
[59]	Yang F, Yao J Y, Xu H Y, Feng K, Yin W L, Li F Q, Yang J, Du S F, Peng Q J, Zhang J Y, Cui D F, Wu Y C, Chen C T, Xu Z Y 2013 Opt. Lett. 38 3903
[60]	Yang F, Yao J Y, Xu H Y, Zhang F F, Zhai N X, Lin Z H, Zong N, Peng Q J, Zhang J Y, Cui D F, Wu Y C, Chen C T, Xu Z Y 2015 IEEE Photon. Technol. Lett. 27 1100
[61]	Yuan J H, Li C, Yao B Q, Yao J Y, Duan X M, Li Y Y, Shen Y J, Wu Y C, Cui Z, Dai T Y 2016 Opt. Express 24 6083
[62]	Xu W T, Wang Y Y, Xu D G, Li C, Yao J Y, Yan C, He Y X, Nie M T, Wu Y C, Yao J Q 2017 Appl. Phys. B 123 80
[63]	Kolker D B, Kostyukova N Y, Boyko A A, Badikov V V, Badikov D V, Shadrintseva A G, Tretyakova N N, Zenov K G, Karapuzikov A A, Zondy J J 2018 J. Phys. Commun. 2 035039
[64]	Kolesnikov N N, James R B, Berzigiarova N S, Kulakov M P 2003 Proc. SPIE 4784 93
[65]	Zeng T, Zhao B, Zhu S, He Z, Chen B, Tan Z 2011 J. Cryst. Growth 316 15
[66]	Ni Y, Wu H, Mao M, Li W, Wang Z, Ma J, Chen S, Huang C 2018 Opt. Mater. Express 8 1796
[67]	Yao B Q, Li G, Zhu G L, Meng P B, Jü Y L, Wang Y Z 2012 Chin. Phys. B 3 034213
[68]	Allik T H, Chandra S, Rines D M, Schunemann P G, Hutchinson J A, Utano R 1997 Opt. Lett. 22 597
[69]	Yuan J H, Duan X M, Yao B Q, Cui Z, Li Y Y, Dai T Y, Shen Y J, Ju Y L 2016 Appl. Phys. B 122 202
[70]	Anis M K 1981 J. Cryst. Growth 55 465
[71]	Petrov V, Panyutin V L, Tyazhev A, Marchev G, Zagumennyi A I, Rotermund F, Noack F, Miyata K, Iskhakova L D, Zerrouk A F 2011 Laser Phys. 21 774
[72]	Tikhomirov A A, Lanskii G V 2006 Proc. SPIE 6258 64
[73]	Suhre D R, Singh N B, Balakrishna V, Fernelius N C, Hopkins F K 1997 Opt. Lett. 22 775
[74]	Das S, Ghosh C, Voevodina O G, Andreev Y M, Sarkisov S Y 2006 Appl. Phys. B 82 43
[75]	Hsu Y K, Chang C S, Hsieh W F 2003 Jpn. J. Appl. Phys. 42 4222
[76]	Zhu C, Lei Z, Song L, Ma T, Yang C 2015 J. Cryst. Growth 421 53
[77]	Zhong K, Yao J Q, Li J S, Xu D, Wang P 2010 Proc. SPIE 7846 78460
[78]	Petrov V, Badikov V, Shevyrdyaeva G, Panyutin V, Chizhikov V 2004 Opt. Mater. 26 217
[79]	Petrov V, Noack F, Badikov V, Shevyrdyaeva G, Panyutin V, Chizhikov V 2004 Appl. Opt. 43 4590
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