缺陷组合嵌入VO<sub>2</sub>薄膜结构的可调太赫兹吸收器

陈旭生; 李九生

doi:10.7498/aps.69.20191511

摘要

提出一种多缺陷组合嵌入VO₂薄膜结构的可调太赫兹吸收器, 它由上表面金属图案层、基体和底层金属板三层结构组成, 在上表面和基体之间嵌入二氧化钒介质. 计算结果表明在f = 4.08 THz和f = 4.33 THz两频点吸收率分别为99.8%和99.9%. 通过改变外界环境温度可控制二氧化钒相变, 从而使两个频点吸收率从99.8%变化到1.0%. 改变入射角和偏振态, 计算结果表明在入射角0°—40°, 吸收器在TE和TM两种极化波下吸收率都能在98%以上. 该太赫兹波吸收器具有高吸收、动态调谐、极化不敏感等特性, 本文所设计的可调太赫兹吸收器在太赫兹波相关领域, 例如探测器、开关、动态调制器、隐身技术等方面具有很好的应用前景.

关键词:

Abstract

The metamaterial absorber has the advantages of thin thickness, small size, simple structure and high absorption. As is different from the traditional metamaterial absorber, the adjustable material is used for designing the structure, which can realize the dynamic modulation of the device by changing the external factors without changing the device structure. In this paper, an adjustable terahertz absorber with multi-defect combination embedded VO₂ thin film is proposed. It is composed of three layers: the upper metal pattern layer, the substrate and the bottom metal plate. Vanadium dioxide medium is sandwiched between the upper surface and the substrate. The absorption performance of the absorber composed of different defect combinations is studied, and the electric field distribution of each combination is analyzed. At the same time, the influences of defects on the absorption performance of the absorber are compared with each other and analyzed. After comprehensive analysis, the defects are combined into the final proposed structure, and the electric field distribution and surface current distribution are analyzed. The relevant parameters affecting the performance of the absorber are scanned and analyzed, and the final optimized structural parameters are obtained. The results show that the absorption rate at f = 4.08 THz and f = 4.33 THz are 99.8% and 99.9%, respectively. The phase transition of vanadium dioxide can be controlled by changing ambient temperature, so that the absorption rates of two frequency points can be changed from 99.8% to 1.0%. In addition, the surface normalized impedance of the proposed absorber is analyzed, which shows that the normalized surface impedance of the designed absorber matches the impedance of the free space well. By changing the incident angle and polarization of terahertz wave, the results show that the absorption rate of the absorber under TE and TM polarization wave both can be more than 98% with the incident angle ranging from 0° to 40°. The proposed terahertz wave absorber has the characteristics of high absorption, dynamic tuning and insensitive polarization. It has good application prospects in terahertz wave related fields such as detectors and stealth technology.

Keywords:

作者及机构信息

中国计量大学, 太赫兹研究所, 杭州　310018

通信作者: 李九生, jshli@126.com

基金项目: 国家自然科学基金(批准号: 61871355, 61831012)资助的课题

Authors and contacts

Centre for THz Research, China Jiliang University, Hangzhou 310018, China

Corresponding author: Li Jiu-Sheng, jshli@126.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61871355, 61831012)

文章全文 : translate this paragraph

参考文献

[1]	Iwaszczuk K, Strikwerda A C, Fan K, Zhang X 2012 Opt. Express. 20 635 Google Scholar
[2]	Tao H, Bingham C M, Strikwerda A C, Pilon D 2008 Phys. Rev. B 78 241103 Google Scholar
[3]	Karaaslan M, Bakır M, Akgol O, Unal E 2017 Opto-Electronics Rev. 25 318 Google Scholar
[4]	Chen C, Sheng Y, Wang J 2017 Opt. Commun. 406 145 Google Scholar
[5]	Landy N I, Bingham C M, Tyler T, Jokerst N M 2009 Phys. Rev. B 79 125104 Google Scholar
[6]	Wan C, Ho Y, Nunez-Sanchez S, Chen L F, Lopez-Garcia M, Pugh J R, Zhu B F, Selvaraj P, Mallick T K, Sundaram S, Cryan J M 2016 Nano. Energy. 26 392 Google Scholar
[7]	Lin K, Chen H, Lai Y, Yu C, Lee Y, Su P, Yen Y T, Chen B 2017 Nano. Energy. 37 61 Google Scholar
[8]	Park J, Kim H J, Nam S H, Kim H, Choi H, Jang Y J, Lee J S, Shin J, Lee H, Baik J M 2016 Nano. Energy. 21 115 Google Scholar
[9]	Lu Y, Dong W, Chen Z, Pors A, Wang Z, Bozhevolnyi S I 2016 Sci. Rep. 6 30650 Google Scholar
[10]	Tan F, Li T, Wang N, Lai S K, Tsoi C C, Yu W, Zhang X 2016 Sci. rep. 6 33049 Google Scholar
[11]	Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W 2008 Phys. Rev. Lett. 100 207402 Google Scholar
[12]	李爱云, 刘凤收, 王猛, 王岳平, 杨其利 2019 激光杂志 40 28 Google Scholar Li A Y, Liu F S, Wang M, Wang Y P, Yang Q L 2019 Laser. J. 40 28 Google Scholar
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[14]	Bakshi S C, Mitra D, Minz L 2018 Plasmonics 13 1843 Google Scholar
[15]	Mohanty A, Acharya O P, Appasani B, Mohapatra S K 2018 Photonic. Nanostruct. 32 74 Google Scholar
[16]	Karimi P, Maddahali M, Bakhtafrouz A, Shahabadi M 2019 IET Optoelectronics 13 5 Google Scholar
[17]	Biabanifard M, Abrishamian M S 2018 Appl. Phys. A 124 826 Google Scholar
[18]	Wang L S, Ding C L, Xia D Y, Ding X Y, Wang Y 2019 IOP Conf. Ser.: Mater. Sci. Eng. 479 012038 Google Scholar
[19]	Daraei O M, Safari M M, Bemani M 2019 eprint ariXiv: 1902.05254
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[21]	Walther M, Cooke D G, Sherstan C, Hajar M, Freeman M R, Hegmann F A 2007 Phys. Rev. B 76 125408 Google Scholar

施引文献

图 1 多缺陷组合结构可调太赫兹吸收器　(a) 单元结构三维立体图; (b) 单元俯视图

Fig. 1. Adjustable terahertz absorber with multiple defects: (a) Three-dimensional of unit structure; (b) top view of unit structure.

下载: 全尺寸图片幻灯片

图 2 不同组合形成的吸收器吸收曲线

Fig. 2. Absorption curves of the absorber formed by different combinations.

下载: 全尺寸图片幻灯片

图 3 TE模式下电场E分布图　(a) 组合一, f = 4.06 THz; (d) 组合一, f = 4.27 THz; (b) 组合二, f = 4.03 THz; (e) 组合二, f = 4.33 THz; (c) 组合三, f = 4.06 THz; (f) 组合三, f = 4.39 THz

Fig. 3. Electric field distribution in TE mode: (a) Combination 1, f = 4.06 THz; (d) combination 2, f = 4.27 THz; (b) combination 2, f = 4.03 THz; (e) combination 2, f = 4.33 THz; (c) combination 3, f = 4.06 THz; (f) combination 3, f = 4.39 THz.

下载: 全尺寸图片幻灯片

图 4 多缺陷组合TE模式下电场E和电流A分布图　(a) f = 4.08 THz, 电场分布; (b) f = 4.33 THz, 电场分布; (c) f = 4.08 THz, 电流分布; (d) f = 4.33 THz, 电流分布

Fig. 4. Electric field and current distribution in TE mode with multiple defects: (a) f = 4.08 THz, electric field distribution; (b) f = 4.33 THz, electric field distribution; (c) f = 4.08 THz, current distribution; (d) f = 4.33 THz, current distribution.

下载: 全尺寸图片幻灯片

图 5 结构参数改变对应的吸收率曲线　(a) 缺陷十字架距离中心距离R; (b) 缺陷圆环缺陷宽度W; (c) 中心圆环宽度D

Fig. 5. Absorption curves corresponding to the change of structural parameters: (a) Defect cross distance from center R; (b) defect ring width W; (c) center ring width D.

下载: 全尺寸图片幻灯片

图 6 VO₂的电导率随温度的变化

Fig. 6. Changes of VO₂ conductivity with temperature.

下载: 全尺寸图片幻灯片

图 7 (a) 不同温度下吸收器的吸收率; (b) 吸收器的归一化表面阻抗

Fig. 7. (a) Absorption of the absorber at different tempera-tures; (b) normalized surface impedance of the absorber.

下载: 全尺寸图片幻灯片

图 8 太赫兹吸收谱　(a) TE模式; (b) TM模式

Fig. 8. Terahertz absorption spectrum: (a) TE mode; (b) TM mode.

下载: 全尺寸图片幻灯片

[1]	Iwaszczuk K, Strikwerda A C, Fan K, Zhang X 2012 Opt. Express. 20 635 Google Scholar
[2]	Tao H, Bingham C M, Strikwerda A C, Pilon D 2008 Phys. Rev. B 78 241103 Google Scholar
[3]	Karaaslan M, Bakır M, Akgol O, Unal E 2017 Opto-Electronics Rev. 25 318 Google Scholar
[4]	Chen C, Sheng Y, Wang J 2017 Opt. Commun. 406 145 Google Scholar
[5]	Landy N I, Bingham C M, Tyler T, Jokerst N M 2009 Phys. Rev. B 79 125104 Google Scholar
[6]	Wan C, Ho Y, Nunez-Sanchez S, Chen L F, Lopez-Garcia M, Pugh J R, Zhu B F, Selvaraj P, Mallick T K, Sundaram S, Cryan J M 2016 Nano. Energy. 26 392 Google Scholar
[7]	Lin K, Chen H, Lai Y, Yu C, Lee Y, Su P, Yen Y T, Chen B 2017 Nano. Energy. 37 61 Google Scholar
[8]	Park J, Kim H J, Nam S H, Kim H, Choi H, Jang Y J, Lee J S, Shin J, Lee H, Baik J M 2016 Nano. Energy. 21 115 Google Scholar
[9]	Lu Y, Dong W, Chen Z, Pors A, Wang Z, Bozhevolnyi S I 2016 Sci. Rep. 6 30650 Google Scholar
[10]	Tan F, Li T, Wang N, Lai S K, Tsoi C C, Yu W, Zhang X 2016 Sci. rep. 6 33049 Google Scholar
[11]	Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W 2008 Phys. Rev. Lett. 100 207402 Google Scholar
[12]	李爱云, 刘凤收, 王猛, 王岳平, 杨其利 2019 激光杂志 40 28 Google Scholar Li A Y, Liu F S, Wang M, Wang Y P, Yang Q L 2019 Laser. J. 40 28 Google Scholar
[13]	Grzeskiewicz B, Sierakowski A, Marczewski J, Pałka N, Wolarz E 2018 Opt-electronics. Rev. 26 329 Google Scholar
[14]	Bakshi S C, Mitra D, Minz L 2018 Plasmonics 13 1843 Google Scholar
[15]	Mohanty A, Acharya O P, Appasani B, Mohapatra S K 2018 Photonic. Nanostruct. 32 74 Google Scholar
[16]	Karimi P, Maddahali M, Bakhtafrouz A, Shahabadi M 2019 IET Optoelectronics 13 5 Google Scholar
[17]	Biabanifard M, Abrishamian M S 2018 Appl. Phys. A 124 826 Google Scholar
[18]	Wang L S, Ding C L, Xia D Y, Ding X Y, Wang Y 2019 IOP Conf. Ser.: Mater. Sci. Eng. 479 012038 Google Scholar
[19]	Daraei O M, Safari M M, Bemani M 2019 eprint ariXiv: 1902.05254
[20]	Ding F, Zhong S M, Bozhevolnyi S I 2018 Adv. Opt. Mater. 6 1701204 Google Scholar
[21]	Walther M, Cooke D G, Sherstan C, Hajar M, Freeman M R, Hegmann F A 2007 Phys. Rev. B 76 125408 Google Scholar

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缺陷组合嵌入VO₂薄膜结构的可调太赫兹吸收器