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中国物理学会期刊

二维过渡金属硫属化合物相变方法的研究进展

CSTR: 32037.14.aps.69.20200965

Research progress of two-dimensional transition metal dichalcogenide phase transition methods

CSTR: 32037.14.aps.69.20200965
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  • 近些年来, 二维过渡金属硫属化合物因其具有独特的原子结构和能带特征而备受关注. 过渡金属硫属化合物不仅存在稳定相, 也存在一些亚稳相, 这些亚稳相因其独特的电学和光学特性逐渐成为研究的热点. 为了获得这些亚稳相, 一种能够使过渡金属硫属化合物在两种晶相之间可控相变的方法必不可少. 本文首先对过渡金属硫属化合物的电学、力学和光学特性进行了总结, 然后介绍了其不同的晶相结构特征, 接着列举了目前报道的过渡金属硫属化合物的八种相变方法: 化学气相沉积法、掺杂法、分子插层法、应力法、高温热处理法、激光引导法、等离子体处理法以及电场引导法, 并且介绍了各自的研究进展, 最后对本文涉及的相变方法进行了总结并列举了这些方法迄今为止所存在的一些问题. 该文详细阐述了过渡金属硫属化合物的相变方法, 为未来过渡金属硫属化合物的相变研究提供了一个很好的参考方向.

     

    Following traditional semiconductors such as silicon and GaAs, in recent years the two-dimensional materials have attracted attention in the field of optoelectronic devices, thermoelectric devices and energy storage and conversion due to their many peculiar properties. However, the normal two-dimensional materials such as graphene, cannot be well used in the field of optoelectronics due to the lack of a band gap, and the black phosphorus is also greatly limited in practical applications due to its instability in the air. The two-dimensional transition metal dichalcogenides have attracted more attention due to the different atomic structures, adjustable energy band and excellent photoelectric properties. There are different crystal phases in transition metal dichalcogenides, some of which are stable in the ground state, and others are instable. Different phases exhibit different characteristics, some of which have semiconductor properties and others have like metal in property. These stable and metastable phases of transition metal dichalcogenides can be transformed into each other under some conditions. In order to obtain these metastable phases, thereby modulating their photoelectric performance and improving the mobility of the devices, it is essential to obtain a phase transition method that enables the crystal phase transition of the transition metal dichalcogenides. In this article, first of all, we summarize the different crystal structures of transition metal dichalcogenides and their electrical, mechanical, and optical properties. Next, the eight phase transition methods of transition metal dichalcogenides are listed, these being chemical vapor deposition, doping, ion intercalation, strain, high temperature thermal treatment, laser inducing, plasma treatment, and electric field inducing. After that, the research progress of these phase transition methods and their advantages and disadvantages are introduced. Finally, we sum up all the phase transition methods mentioned in this article and then list some of the problems that have not been solved so far. This review elaborates all of the presently existing different phase transition methods of transition metal dichalcogenides in detail, which provides a good reference for studying the phase transition of transition metal dichalcogenides in the future, the electrical performance regulated by different phases, and the applications of memory devices and electrode manufacturing.

     

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