层状磁性拓扑材料中的物理问题与实验进展

孙慧敏; 何庆林

doi:10.7498/aps.70.20210133

摘要

层状磁性材料与拓扑材料的交汇点同时结合了二者的优势, 形成了在最小二维单元下同时具有磁序和拓扑性的材料体系, 即层状磁性拓扑材料. 这类材料的电子结构中可能存在狄拉克点、外尔点、节线等具有螺旋性或手性的拓扑电子态, 同时涵盖了绝缘体、半金属和金属等的材料分类, 导致新物性、新现象成为可能, 因此引起了广泛的关注. 本文主要以具有层状结构的本征磁性拓扑绝缘体、磁性外尔半金属、磁性狄拉克半金属等为例简要综述磁序与拓扑序之间的相互作用和近期部分的重要实验结果. 此交叉材料领域方兴未艾, 候选材料仍然非常缺乏, 亟待进一步的开发和研究, 是当前一个富有挑战的凝聚态物理前沿.

关键词:

Abstract

The intersection between layered magnetic materials and topological materials combines the advantages of the two, forming a material system with both the magnetic orders and topological properties within the minimum two-dimensional unit, i.e. layered magnetic topological materials. This type of material may host Dirac points, Weyl points, nodal lines, etc. which are associated with helical or chiral electronic states ranging from insulator, semimetal to metal. This results in lots of novel physical problems and effects, which attract much attention of scientists. In this paper, we focus our attention on intrinsic magnetic topological insulator, magnetic Weyl semimetal, magnetic Dirac semimetal, and take them for example to briefly review the interplay between magnetic orders and topological orders and recent experimental results. This emergent area requires further studies to explore more new material candidates, which is a challenging frontier of condensed matter physics.

Keywords:

作者及机构信息

孙慧敏^1,2,3,
何庆林^1,2,3

1.
北京大学物理学院, 量子材料科学中心, 北京　100871

2.
量子物质科学协同创新中心, 北京　100871

3.
北京大学轻元素量子材料交叉平台和轻元素先进材料研究中心, 北京　100871

通信作者: 何庆林, qlhe@pku.edu.cn

基金项目: 国家重点研发计划(批准号: 2020YFA0308900, 2018YFA0305601)、国家自然科学基金(批准号: 11874070)和中国科学院战略性先导科技专项(B类) (批准号: XDB28000000)资助的课题

Authors and contacts

1.
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China

2.
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

3.
Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China

Corresponding author: He Qing-Lin, qlhe@pku.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant Nos. 2020YFA0308900, 2018YFA0305601), the National Natural Science Foundation of China (Grant No. 11874070), and the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB28000000)

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施引文献

图 1 本征反铁磁拓扑绝缘体MnBi₂Te₄的晶格结构、磁结构和电子结构　(a)晶格结构示意图, 其中Mn原子的自旋如红色箭头所示, 材料呈A型反铁磁序; (b)理论上不同厚度、磁化强度的MnBi₂Te₄ 能实现的拓扑相; (c), (d)利用角分辨光电子能谱测量的表面能带结构. 图(a)来自文献[44], 图(b)来自文献[46], 图(c)来自文献[21], 图(d)来自文献[57]

Fig. 1. Crystalline, magnetic, and electronic structures of intrinsic antiferromagnetic topological insulator MnBi₂Te₄: (a) Schematic crystalline structure, the spins of Mn atoms are shown as red arrows, showing a type-A antiferromagnetic order; (b) topological phase diagram of MnBi₂Te₄ with different thicknesses and magnetizations; (c), (d) angle resolved photoemission spectroscopies of surface electronic structures. (a) is adopted from Ref. [44], (b) from Ref. [46], (c) from Ref. [21], and (d) from Ref. [57].

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图 2 磁性外尔半金属Co₃Sn₂S₂的晶格结构、磁结构和电子结构　(a)晶格结构示意图, 其中Co原子的自旋如红色箭头所示, 材料呈铁磁序; (b), (c)利用角分辨光电子能谱测量的能带结构. 图(a)来自文献[22], 图(b)和图(c)来自文献[82]

Fig. 2. Crystalline, magnetic, and electronic structures of magnetic Weyl semimetal Co₃Sn₂S₂: (a) Schematic crystalline structure, the spins of Co atoms are shown as red arrows, showing a ferromagnetic order; (b), (c) angle resolved photoemission spectroscopies of the electronic structures. (a) is adopted from Ref. [22], (b) and (c) from Ref. [82].

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图 3 磁性外尔半金属Mn₃Sn的晶格结构、磁结构和电子结构　(a), (b)晶格结构示意图, 其中Mn原子的自旋如蓝色箭头所示, 材料呈反铁磁序; (c), (d)利用角分辨光电子能谱测量的能带结构. 图(a)和图(b)来自文献[27], 图(c)和图(d)来自文献[84]

Fig. 3. Crystalline, magnetic, and electronic structures of magnetic Weyl semimetal Mn₃Sn: (a), (b) Schematic crystalline structure, the spins of Co atoms are shown as blue arrows, showing an antiferromagnetic order; (c), (d) angle resolved photoemission spectroscopies of the electronic structures. (a) and (b) are adopted from Ref. [27], (c) and (d) from Ref. [84].

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图 4 磁性外尔半金属Fe₃Sn的晶格结构和电子结构　(a)晶格结构示意图; (b)—(d)利用角分辨光电子能谱测量的能带结构. 图(a)来自文献[85], 图(b)—(d)来自文献[31]

Fig. 4. Crystalline and electronic structures of magnetic Weyl semimetal Fe₃Sn: (a) Schematic crystalline structure; (b)–(d) angle resolved photoemission spectroscopies of the electronic structures. (a) is adopted from Ref. [85], (b)–(d) from Ref. [31].

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图 5 磁性外尔半金属FeSn的晶格结构、磁结构和电子结构　(a)晶格结构示意图, 其中Fe原子的自旋如红、蓝色箭头所示, 材料呈反铁磁序; (b), (c)利用角分辨光电子能谱测量的能带结构. 图(a)来自文献[88], 图(b)和图(c)来自文献[14]

Fig. 5. Crystalline, magnetic, and electronic structures of magnetic Weyl semimetal FeSn: (a) Schematic crystalline structure, the spins of Fe atoms are shown as red and blue arrows, showing an antiferromagnetic order; (b), (c) angle resolved photoemission spectroscopies of the electronic structures. (a) is adopted from Ref. [88], (b) and (c) from Ref. [14].

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图 6 本征磁性拓扑绝缘体的量子反常霍尔效应、轴子绝缘体态　(a)霍尔电阻; (b)磁阻; (c)零磁场下纵向电阻率的栅极电压调制; (d)磁场和栅极电压调制下的相图. 图(a)和图(b)来自文献[20], 图(c)和图(d)来自文献[18]

Fig. 6. Quantum anomalous Hall effect and axion insulating state in the intrinsic antiferromagnetic topological insulator: (a) Hall resistance; (b) magneto-resistance; (c) gate-bias modulated longitudinal resistivity under zero magnetic field; (d) a phase diagram of magnetic field and gate bias. (a) and (b) are adopted from Ref. [20], (c) and (d) from Ref. [18].

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图 7 磁性外尔半金属Co₃Sn₂S₂的反常霍尔效应、手性异常和反常能斯特效应　(a)霍尔电导; (b)磁电导; (c), (d)反常能斯特热功率. 图(a)和图(b)来自文献[22], 图(c)和图(d)来自文献[109]

Fig. 7. Giant anomalous Hall effect, chiral anomaly, and anomalous Nernst effect in magnetic Weyl semimetal Co₃Sn₂S₂: (a) Hall conductance; (b) magneto-electric conductance; (c), (d) anomalous Nernst thermal power. (a) and (b) are adopted from Ref. [22], (c) and (d) from Ref. [109].

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图 8 磁性外尔半金属Mn₃Ge的反常霍尔效应、Mn₃Sn的手性异常和反常能斯特效应　(a)动量空间中Mn₃Ge的反常霍尔电导分布; (b)在Mn₃Ge中自旋结构的镜面对称性; (c) Mn₃Ge的霍尔电阻率; (d) Mn₃Sn的面内外的纵向电导; (e) Mn_3.06Sn_0.94的反常能斯特热功率. 图(a)—(c)来自文献[29], 图(d)来自文献[84], 图(e)来自文献[111]

Fig. 8. Anomalous Hall effect in magnetic Weyl semimetal Mn₃Ge, chiral anomalyand anomalous Nernst effect in magnetic Weyl semimetal Mn₃Sn: (a) Distribution of anomalous Hall conductance of Mn₃Ge in momentum space: (b) spin texture with mirror symmetry in Mn₃Ge; (c) Hall resistivity of Mn₃Ge; (d) longitudinal conductance of both in- and out-plane for Mn₃Sn; (e) anomalous Nernst power of Mn_3.06Sn_0.94. (a)–(c) are adopted from Ref. [29], (d) from Ref. [84], (e) from Ref. [111].

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图 9 磁性狄拉克半金属Fe₃Sn₂的反常霍尔效应、拓扑霍尔效应、磁斯格明子磁泡　(a)霍尔电阻率; (b)拓扑霍尔电阻率; (c)温度-磁场下的相图; (d)观察到的斯格明子磁泡. 图(a)来自文献[31], 图(b)来自文献[117], 图(c)来自文献[115], 图(d)来自文献[118]

Fig. 9. Anomalous Hall effect, topological Hall effect, and skyrmion bubble in magnetic Dirac semimetal Fe₃Sn₂: (a) Hall resistivity; (b) topological Hall resistivity; (c) a phase diagram of temperature and magnetic field; (d) the observed skyrmion bubble. (a) is adopted from Ref. [31], (b) from Ref. [117], (c) from Ref. [115], (d) from Ref. [118].

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层状磁性拓扑材料中的物理问题与实验进展