Field effect transistors (FETs) based on two-dimensional (2D) materials have great potential applications in very large-scale integration technology, and high-performance short channel 2D semiconductor FETs are essential. Owing to the difficulty in obtaining channel lengths below 10 nm for 2D materials, there are few stable methods of fabricating short channel 2D semiconductor FETs. Here we report a method of stably fabricating vertical short-channel MoS₂ FETs by using graphene as the contact material and h-BN as the spacer. The 8-nm spacer transistor exhibits good switching characteristics. The on/off ratio is greater than 10⁷ and the off-state current is less than 100 fA/μm under different source-drain voltages, which are immune well to the direct source-to-drain tunneling effect. This method can be used to rapidly screen two-dimensional materials that are immune to short-channel effects and also are suitable for the fabrication of high-performance FETs.