In order to prepare high-quantum-efficiency semiconductor Cs-Te photocathode which can produce a high-quality electron source, based on the INFN-LASA Cs-Te photocathode preparation method, the Cs-Te photocathode preparation method with Te intermittent, Cs continuous deposition is developed. The Cs-Te photocathode with quantum efficiency greater than 5% under 265 nm UV irradiation is successfully prepared in the photocathode preparation device of SINAP and SARI, and the fabrication success rate reaches 100%. As long as the preparation chamber vacuum degree is better than 10^–8 Pa, the Cs-Te photocathode with high quantum efficiency can be prepared by this preparation method, which will not be different due to the changes of preparation equipment and operators.