Coefficient of thermal expansion (CTE) and dielectric constant for the SiO
2/polytetrafluoroethylene (SiO
2/PTFE) dielectric composite are mainly influenced by their filling content, and how to accurately predict the effect is still a great challenge untill now. In this work, the CTE and dielectric constant of SiO
2/PTFE dielectric composite are systematically investigated by numerical simulation. The results show that with the increase of SiO
2 content, CTE of SiO
2/PTFE dielectric composite decreases, and the dielectric constant increases, which are in good agreement with the data reported in the literature (Han K K, Zhou J, Li Q Z, Shen J, Qi Y Y, Yao X P, Chen W
2020 J. Mater. Sci. Mater. Electron. 31 9196). The 30% (volume fraction) solid SiO
2 sphere (SSS)/PTFE dielectric composite is the smallest CTE of 7.5×10
–5 K
–1, while 10% (volume fraction) hollow solid sphere (HSS)/PTFE possesses the smallest dielectric constant of 2.06. The CTE of SiO
2/PTFE dielectric composite may decrease when the SiO
2 distribution is dense at the bottom. The large aspect ratio of SiO
2 filler may reduce CTE
x of SiO
2/PTFE dielectric composite. The molding parameters have little effect on the thermal expansion coefficient of the solid SiO
2/PTFE composite dielectric material. This work provides a clear insight into the controlling of CTE and dielectric constant of SiO
2/PTFE dielectric composite by adjusting its microstructure.