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中国物理学会期刊

Er3+掺杂TiO2的局域结构及电子性质的第一性原理研究

CSTR: 32037.14.aps.71.20221847

First-principles calculations of local structure and electronic properties of Er3+-doped TiO2

CSTR: 32037.14.aps.71.20221847
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  • 三价稀土铒离子(Er3+)掺杂二氧化钛(TiO2)因其优异的光电性能, 在众多稀土掺杂发光晶体材料中脱颖而出, 具有非常广泛的应用前景. 利用CALYPSO (Crystal structure AnaLYsis by Particle Swarm Optimization)结构搜索方法和第一性原理计算, 成功地预测和探究了三价铒离子掺杂二氧化钛(Er3+:TiO2)晶体的基态结构. 首次报道Er3+掺杂TiO2的最低能量结构具有P\overline 4 m2空间对称性. 当Er3+离子掺杂基质晶体时, Er3+离子占据Ti4+离子的位置, 并造成结构畸变, 最终使得Er3+离子的局域对称性由D2d降低为C2v. 通过电子结构计算发现Er3+掺杂TiO2的能带隙值约为2.27 eV, 这表明Er3+离子的掺杂会导致体系的带隙值降低, 但没有改变其半导体性质, 从而在光伏电池和半导体激光器等领域具有更广泛的应用. 这些发现不仅为进一步探索Er3+:TiO2晶体的性质和应用提供了数据参考, 也为探究其他稀土掺杂晶体材料提供了最新的方法.

     

    Trivalent rare earth erbium ion (Er3+) doped titanium oxide (TiO2) can possess a very wide range of applications due to its excellent optoelectronic properties, thus standing out among many rare-earth-doped luminescent crystals. However, the issues regarding local structure and electronic properties have not been finalized. To address these problems, the CALYPSO (Crystal structure AnaLYsis by Particle Swarm Optimization) method combined with the first-principles calculations is employed, and many converged structures of Er3+-doped TiO2 are successfully obtained. Further structural optimization is performed by using the VASP (Vienna ab initio simulation package) software package, and we report for the first time that the lowest energy structure of Er3+-doped TiO2 has the P\overline 4 m2 symmetry. It can be observed that the doped Er3+ ions enter into the host crystal and occupy the positions of Ti4+ ions, resulting in structural distortion, which eventually leads the local Er3+ coordination site symmetry to reduce from D2d into C2v. We speculate that there are two reasons: 1) the difference in charge between Er3+ ions and Ti4+ ions leads to charge compensation; 2) the difference between their electron radii is obvious: the radius is 0.0881 for Er3+ ion and 0.0881 for Ti4+ ion. In addition, during the structural search, we also find many metastable structures that may exist at a special temperature or pressure, which play an important role in the studying of structural evolution. When the electronic band structure of the Er3+-doped TiO2 system is calculated, we adopt the method of local density approximation (LDA) combined with the on-site Coulomb repulsion parameter U to accurately describe the strongly correlated system. For the specific value of U, we adopt 3.5 eV and 7.6 eV to describe the strong correlation of 3d electrons of Ti4+ ions and 4f electrons of Er3+ ions, respectively. According to the calculation of electronic properties, the band gap value of Er3+ doped TiO2 is about 2.27 eV, which is lower than that of the host crystal (Eg = 2.40 eV). The results show that the reduction in the band gap is mainly caused by the f state of Er3+ ions. The doping of Er ion does reduce the band gap value, but it does not change the conductivity of the system, which have great application prospect in diode-pumped laser. These findings not only provide the data for further exploring the properties and applications of Er3+:TiO2 crystals, but also present an approach to studying other rare-earth-doped crystalline materials.

     

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