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中国物理学会期刊

触媒组分对高温高压金刚石大单晶生长及裂纹缺陷的影响

CSTR: 32037.14.aps.72.20221841

Effect of catalyst composition on growth and crack defects of large diamond single crystal under high temperature and pressure

CSTR: 32037.14.aps.72.20221841
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  • 本文利用六面顶压机, 在5.6 GPa, 1250—1450 ℃的高压高温条件下, 分别选用FeNiCo和NiMnCo触媒合金开展了金刚石大单晶的生长实验, 系统地考察了触媒组分对金刚石单晶裂纹缺陷的影响. 首先, 通过对两种组分触媒晶体生长实验对比发现, 金刚石大单晶裂纹缺陷出现的概率与触媒组分相关联. 同NiMnCo触媒相比, FeNiCo触媒生长的金刚石单晶更容易出现生长裂纹. 我们认为, 这与FeNiCo触媒黏度高、流动性差、碳素输运能力差、生长中晶体比表面积大, 进而导致其对生长条件稳定性的要求较高有关. 其次, 两种触媒极限增重速度和生长时间的关系曲线表明, 相同生长时间条件下, NiMnCo触媒生长金刚石单晶的极限增重速度相对较大. 再次, 扫描电子显微镜测试结果表明, 裂纹缺陷的出现与否同晶体表面平整度的高低无必然联系, 表面平整度高的金刚石单晶内部也可能存在裂纹缺陷. 最后, 经对金刚石单晶傅里叶微区红外测试结果进行分析, 得出了氮杂质含量的高低与金刚石单晶裂纹缺陷的出现与否无内在关联性的研究结论.

     

    Under the condition of 5.6 GPa and 1250–1450 ℃, the diamond single crystals are synthesized in a cubic anvil high-pressure and high-temperature apparatus. High-purity FeNiCo solvents or NiMnCo solvents are chosen as the catalysts. High-purity (99.99%) graphite powders selected as a carbon source. High-quality abrasive grade diamond single crystals with relatively developed (100) or (111) crystal planes are used as crystal seeds. The effects of catalyst composition on crack defects in diamond single crystals are studied carefully. Firstly, using FeNiCo and NiMnCo catalysts respectively, we carry out the diamond single crystal growth experiments. It is found that under the same crystal growth condition, the probability of crystal crack defects in diamond single crystals grown with FeNiCo catalyst is significantly higher than that of crystals grown with NiMnCo catalyst. We believe that this is related to the high viscosity, poor fluidity of FeNiCo catalyst melt, and the large specific surface area of the crystal during growth, which leads to its high requirements for the stability of growth conditions. Secondly, the relationship between the growth time and the limit weight gain speed of the diamond single crystal synthesized, respectively, by FeNiCo catalyst and NiMnCo catalyst are investigated. The results are shown below. 1) The limiting growth rate of diamond single crystal increases with the growth time going by. 2) In the same growth time, the limit growth rate of diamond crystal grown with NiMnCo catalyst is higher than that of diamond crystal grown with NiMnCo catalyst. Thirdly, by scanning electron microscopy (SEM), we calibrate the surface morphology of the synthesized diamond single crystal. The test results show that the diamond single crystal has a high surface flatness. Even for the crystals with crack defects in the interior, the surface flatness is still good. However, Fourier transform infrared (FTIR) measurements show that the nitrogen impurity content of diamond crystal grown by FeNiCo catalyst with crack defect is about 3.66×10–4. The content of nitrogen impurity in the crystal grown by NiMnCo catalyst without crack defect is about 4.88×10–4. The results show that there is no direct correlation between nitrogen impurity content and crack defects in diamond crystal.

     

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