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中国物理学会期刊

不同环境下硫化镉/铜基薄膜异质结退火对太阳电池性能调控

CSTR: 32037.14.aps.72.20230105

Regulation of solar cell performance by cadmium sulfide/copper-based thin film heterojunction annealing under different atmospheres

CSTR: 32037.14.aps.72.20230105
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  • 高效铜基薄膜太阳电池通常采用无机n型半导体材料CdS作为缓冲层, 因此, 缓冲层与吸收层之间的界面质量和能带匹配对载流子的收集利用至关重要. 在优化CdS基础工艺的基础上, 在含硫气氛下对硫化镉/铜基薄膜异质结进行退火的策略进一步提高CdS薄膜质量, 并将其应用到铜基太阳电池, 调控铜基薄膜电池p-n异质结能带匹配. 研究表明, CdS薄膜在含硫的惰性气氛中退火可以有效提高CdS薄膜的结晶质量并抑制CZTS/CdS异质结界面的非辐射复合, 器件的开路电压得到大幅提升, 最高可达718 mV. 在器件效率方面, 基于溅射法的CZTS太阳电池效率从3.47%提升到5.68%, 约为不退火处理的2倍. 该研究为铜基薄膜太阳电池器件实现高开路电压提供了可靠的工艺窗口. 同时, 有力地说明了退火气氛选择对于CdS质量以及CZTS/CdS异质结能带匹配的重要性, 除了界面互扩散以外, 对薄膜材料组分及其结晶性等均实现了调控.

     

    Efficient copper based thin film solar cells usually use inorganic n-type semiconductor material CdS as the buffer layer. Therefore, the interface quality and energy band matching between the buffer layer and the absorption layer are crucial to the collection and utilization of carriers. Heat treatment can promote the mutual diffusion of interface elements, the migration of ions in the material, and the change of defect state, and the appropriate temperature will change the Cu-Zn ordering degree in the absorption layer, so as to improve the efficiency of the solar cells. Based on the optimization of CdS basic process, the strategy of annealing CdS/copper-based thin film heterojunction in sulfur atmosphere further improves the quality of CdS thin film, and is applied to copper-based solar cells to regulate the p-n heterojunction energy band gap matching of copper-based thin film cells. The results show that the annealing of CdS thin film in sulfur-containing inert atmosphere can effectively improve the crystal quality of CdS thin film and inhibit the non-radiative recombination loss caused by defect trapping at the interface of CZTS/CdS heterojunction, and the open-circuit voltage of the device can significantly increase to 718 mV. In addition, annealing CZTS/CdS heterojunction in S/Ar atmosphere can effectively improve the p-n heterojunction energy band gap matching, which not only improves the electron transmission, but also reduces the carrier recombination, thus improving the Voc and FF of the device. Besides, the oxygen element in CdS film can be replaced by sulfur element in sulfur atmosphere to improve the quality of CdS film, and thus enhancing the short-wave absorption of solar cell device. Therefore, in terms of device efficiency, the efficiency of CZTS solar cell based on sputtering method increases from 3.47% to 5.68%, which is about twice that of non-annealing treatment. Its device structure is Glass/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Ni/Al, providing a reliable process window for copper based thin film solar cell devices to achieve high open-circuit voltage. Meanwhile, this study strongly demonstrates the importance of annealing atmosphere selection for CdS quality and energy band matching of CZTS/CdS heterojunction. In addition to interface interdiffusion, the composition and crystallinity of thin film material are controlled.

     

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