Bi₂O₂Se is a new type of semiconductor material, which has the advantages of high carrier mobility, air stability, strong spin-orbit coupling, etc. It has a variety of synthesis methods and a wide range of applications. In the past few years, many explorations have been made in the synthesis, large-size growth, and applications of Bi₂O₂Se. It has been applied to field effect transistors, infrared photodetectors, semiconductor devices, heterojunctions, spin electronics, etc. Since nanowire has a larger surface area-to-volume ratio than nano-film, nanowire may have greater advantages in gate regulation and strong spin-orbit coupling, and these properties can play a crucial role in certain fields. However, most of the studies focused on its two-dimensional films, and there are less researches of its one-dimensional counterpart. In this work, a method of growing Bi₂O₂Se one-dimensional nanowires by chemical vapor deposition in a three-temperature-zone tubular furnace is introduced. High-quality suspended Bi₂O₂Se nanowires are obtained. In addition, the effects on the Bi₂O₂Se nanowire growth of the position of the mica substrates, i.e, different horizontal positions and vertical heights in the quartz boat, are studied, and the optimal conditions for the growth are summarized. The nanowires are characterized by atomic force microscope and energy dispersive spectrometer to show the information about the size and component. Then, superconducting quantum interference device based on the Bi₂O₂Se nanowires is constructed, and the superconducting quantum interference in a magnetic field is observed, which provides a way to broaden the application of Bi₂O₂Se nanowires.