搜索

x
中国物理学会期刊

含硅高熵材料中的有序-无序相变

CSTR: 32037.14.aps.74.20250307

Order-disorder phase transition in silicon-containing high-entropy materials

CSTR: 32037.14.aps.74.20250307
PDF
HTML
导出引用
  • 高熵合金(HEAs)作为多主元合金的重要分支, 因其优异的力学性能与功能特性受到广泛关注. 本文聚焦含硅高熵合金中的有序-无序相变机制, 系统综述其热力学与动力学调控规律及其对材料性能的影响. 研究表明, 硅的引入通过优化原子尺寸匹配与混合焓, 实现高熵合金中有序相和无序相的匹配, 显著提升合金的机械以及物理化学性能. 同时, 制备工艺与温度/压力调控可通过影响相形成实现多相结构的协同强化. 通过成分设计与工艺优化, 含硅高熵材料在航空航天、能源及电子器件等领域展现出广阔应用潜力. 未来研究需进一步结合多尺度表征与理论模型, 揭示相变动态机制, 推动其工程化应用.

     

    High-entropy alloys (HEAs), representing a significant category of multi-component alloys, have attracted significant attention due to their outstanding mechanical and functional properties. This review focuses on the order-disorder phase transition mechanisms in silicon-based HEAs, systematically addressing the thermodynamic and kinetic regulation principles and their effects on material performance. The research has shown that adding silicon improves atomic size matching and mixing enthalpy, allowing high-entropy alloys to have both ordered and disordered phases, thereby significantly enhancing their mechanical and physicochemical properties.
    The evolution of ordered and disordered phases is strictly controlled by fabrication processes. Advanced fabrication techniques, such as laser cladding and powder metallurgy, as well as temperature/pressure modulation, can precisely control phase formation and layered structure, achieving synergistic strengthening through multiphase structures. Rapid cooling techniques such as laser cladding suppress the nucleation and growth of brittle intermetallic compounds, which is beneficial for single-phase FCC structures. On the contrary, controlled annealing treatments can induce phase transitions towards ordered BCC/B2 structures, enhancing high-temperature stability. Advanced techniques such as powder plasma arc additive manufacturing (PPA-AM) utilize rapid solidification to refine grain size and effectively disperse second phases. Thermodynamic drivers, particularly the competition between entropy and enthalpy quantified by the parameter Ω, as well as external stimuli such as pressure, provide precise control over the phase transition pathways and final microstructures.
    Furthermore, the incorporation of sillicon enhances functional performance, including increasing electrical resistivity, customizing magnetic responses, and improved high-temperature oxidation resistance through the formation of Al2O3/SiO2 layers. Despite these advancements, there are still challenges in understanding atomic-scale dynamics of phase transitions and expanding cost-effective manufacturing processes. Future efforts should integrate multiscale characterization, computational modeling, and performance validation under extreme conditions to accelerate the engineering applications of silicon-based HEAs in aerospace, energy storage, and electronic devices.

     

    目录

    /

    返回文章
    返回