Under high temperature and pressure conditions, silicon-based devices experience leakage and deformation due to the self-heating effect, making them unable to operate stably for a long time. Silicon carbide (SiC), as a representative third-generation semiconductor material, is an ideal option for high-temperature, high-frequency, and high-power electronic devices. However, the high-temperature performance limitations of 4H-SiC devices stem from the stability of ohmic contact electrodes and metal interconnections. The output of the lead electrodes is unstable at present, and oxygen intrusion at high temperatures can easily cause output failures. Previous studies indicate that the SiC/Ti/TaSi₂/Pt multilayer structure holds significant potential for ohmic contacts. Building upon this ohmic contact foundation, this study proposes a batch sputtering-annealing process to prepare high-temperature-resistant lead electrodes. This involves altering the sequence of annealing and sputtering: first sputtering Ti/TaSi₂ onto the SiC substrate and annealing to form the ohmic contact, followed by depositing a Pt protective layer to construct a novel SiC/Ti/TaSi₂/Pt electrode structure. Comparative analysis of the two experimental groups is conducted using scanning electron microscope (SEM), auger electron spectroscopy (AES), X-ray diffraction (XRD), thin-film stress measurement, and semiconductor analyzers. The batch-sputtered and annealed electrode structure can enhance density and reduce residual stress, with an initial specific contact resistivity of 6.35×10^–5 Ω·cm². High-temperature aging tests at 600 ℃ demonstrates superior electrical stability for electrodes formed by sputtering Pt onto Ti/TaSi₂ after ohmic contact formation. These electrodes maintain ohmic characteristics even after 20-hour air aging, whereas traditional co-sputtered ohmic contacts transition to Schottky contacts. Pt effectively suppresses atomic diffusion and oxidation reactions, resulting in a smooth electrode microstructure without curling. The batch sputtering-annealing process not only greatly enhances the overall performance of SiC ohmic contacts but also provides crucial guidance for realizing the structural design and performance improvement of ohmic contacts by using other metal combinations. This approach holds significant reference value for the high-temperature packaging of third-generation semiconductor power devices and the development of electronic systems operating in harsh environments.