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中国物理学会期刊

二维材料宽谱光电探测器研究进展

CSTR: 32037.14.aps.74.20251115

Research progress of broadband photodetectors based on two-dimensional materials

CSTR: 32037.14.aps.74.20251115
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  • 随着高速成像、航空航天及光通信等领域的快速发展, 对覆盖宽光谱范围且具备高性能的光电探测器需求日益迫切. 二维材料因其独特的结构维度、可调的电子结构以及优异的载流子输运特性等, 被视为宽谱光电探测的理想候选材料. 然而, 实现兼具高响应度与高速响应的宽谱探测器仍面临诸多挑战. 本文首先介绍了二维材料的光电特性基础, 包括带隙调控机制与光谱响应范围、载流子输运及复合过程、光吸收特性等, 为理解其宽谱探测能力奠定理论基础. 随后, 系统地梳理了窄带隙二维材料、二维拓扑材料以及二维钙钛矿材料体系在宽谱探测中的研究进展. 接下来重点探讨了异质集成、缺陷调控、光场增强以及应变调控等四类提升二维材料光电探测性能的有效途径. 最后, 对二维材料宽谱光电探测器在高性能、低功耗、多功能化及规模化应用方面的挑战与发展前景进行了展望, 指出多种策略的协同集成有望推动新一代宽谱光电探测器的实用化进程.

     

    The increasing demands for high-speed imaging, aerospace, and optical communication have driven in-depth research on broadband photodetectors with high sensitivity and fast response. Two-dimensional (2D) materials have atomic-scale thickness, tunable bandgaps, and excellent carrier transport properties, making them ideal candidates for next-generation optoelectronics. However, their limited light absorption and intrinsic recombination losses remain key challenges. This paper provides an overview of recent progress of 2D-material-based broadband photodetectors. First, the fundamental optoelectronic properties of 2D materials, including bandgap modulation, carrier dynamics, and light–matter interactions, are discussed to clarify their broadband detection potential. Representative material systems, such as narrow-band gap semiconductors, 2D topological materials, and perovskites, are summarized, showing the detection ability from the ultraviolet to the mid-infrared regions. To overcome intrinsic limitations, four optimization strategies are highlighted: heterostructure engineering for efficient charge separation and extended spectral response; defect engineering to introduce mid-gap states and enhance sub-bandgap absorption; optical field enhancement through plasmonic nanostructures and optical cavities to improve responsivity; strain engineering for reversible band structure tuning, particularly suited for flexible devices. These strategies have achieved significant improvements in responsivity, detectivity, and bandwidth, with some devices implementing ultrabroadband detection and multifunctionality. In summary, 2D materials and their hybrids have shown great potential in broadband photodetection, with progress made in material innovation and device architecture optimization. The reviewed strategies, including heterostructure integration, defect modulation, optical field enhancement, and strain engineering, collectively demonstrate the different ways of overcoming intrinsic limitations and improving device performance. Looking ahead to the future, the reasonable combination of these methods is expected to further expand the detection window, improve sensitivity, and achieve multifunctional operations, thereby paving the way for the multifunctional applications of the next-generation broadband photodetectors in imaging, sensing, and optoelectronic systems.

     

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