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中国物理学会期刊

利用范德瓦耳斯工程定制具有全新发光各向异性的二维异质结

CSTR: 32037.14.aps.74.20251120

Customizing two-dimensional heterojunction with novel luminescenct anisotropy using van der Waals engineering

CSTR: 32037.14.aps.74.20251120
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  • 二维材料的发光特性与各向异性构成了微纳偏振发光器件实现与性能优化的物理基础. 然而, 并非所有天然二维材料体系同时具备强本征发光与强各向异性, 这在很大程度上限制了其在偏振可控发光器件中的应用潜力. 针对这一问题, 本研究基于范德瓦耳斯工程策略, 构建了由单层MoS2与低对称性NbIrTe4组成的异质结, 从而实现了高效发光特性与强各向异性响应的协同耦合. 角分辨偏振光致发光测试结果表明, NbIrTe4中固有的各向异性势场能够有效地改变单层MoS2的面内晶格对称性, 诱导其光致发光过程呈现明显的偏振依赖性, 并显著地提升激子的各向异性辐射强度. 本研究不仅揭示了范德瓦耳斯异质结中发光各向异性产生的微观物理机制, 还为新一代高性能偏振发光器件的结构设计与性能调控提供了可行的理论指导与实验依据.

     

    Luminescence and anisotropy in two-dimensional (2D) materials have important implications for both fundamental material physics and potential applications such as polarized light-emitting devices. However, many natural-occuring 2D materials typically exhibit either luminescence or anisotropy, but not both. In this work, we utilize van der Waals (vdW) engineering to construct a heterostructure (HS) with anisotropic luminescent properties, which is composed of isotropic monolayer (1L) MoS2 (with strong intrinsic luminescence) and low-symmetry NbIrTe4 (strong anisotropy without photoluminescence). Experimentally, we characterize the optical response of the HS by using angle-resolved PL spectroscopy. The results indicate that the intrinsic anisotropic potential field of NbIrTe4 at the interface effectively breaks the in-plane isotropic symmetry of MoS2, inducing a pronounced polarization-dependent emission of A and B excitons. The anisotropy ratio is enhanced to ~1.58, corresponding to a linear polarization degree of approximately 22%. This work provides new insights into 2D interfacial coupling and offers useful guidance for the design and engineering of next-generation high-performance, tunable polarized light-emitting devices.

     

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